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公开(公告)号:US12035549B2
公开(公告)日:2024-07-09
申请号:US17962244
申请日:2022-10-07
发明人: Masahiro Joei , Kaori Takimoto
IPC分类号: H01L27/30 , H01L27/146 , H01L51/44 , H10K30/81 , H10K39/32
CPC分类号: H10K39/32 , H01L27/14643 , H10K30/81
摘要: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
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公开(公告)号:US12029054B2
公开(公告)日:2024-07-02
申请号:US18303074
申请日:2023-04-19
发明人: Tetsuji Yamaguchi , Atsushi Toda , Itaru Oshiyama
IPC分类号: H10K39/32 , G02B5/20 , H01L27/146 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/131 , H04N25/75 , H04N25/77 , H04N25/79 , H10K19/00 , H10K19/20
CPC分类号: H10K39/32 , G02B5/201 , G02B5/208 , H01L27/146 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14649 , H01L27/14667 , H01L31/10 , H04N23/11 , H04N23/12 , H04N25/79 , H10K19/20 , H10K19/201 , H04N25/131 , H04N25/75 , H04N25/77
摘要: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
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公开(公告)号:US20240213279A1
公开(公告)日:2024-06-27
申请号:US18598856
申请日:2024-03-07
发明人: Yuuko TOMEKAWA , Katsuya NOZAWA
IPC分类号: H01L27/146 , H10K39/32
CPC分类号: H01L27/14605 , H01L27/14636 , H10K39/32
摘要: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.
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公开(公告)号:US20240196117A1
公开(公告)日:2024-06-13
申请号:US18584020
申请日:2024-02-22
发明人: Seiichi YONEDA , Hiroki INOUE
IPC分类号: H04N25/78 , H04N25/709 , H04N25/77 , H10K39/32
CPC分类号: H04N25/78 , H04N25/709 , H04N25/77 , H10K39/32
摘要: An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.
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公开(公告)号:US12002280B2
公开(公告)日:2024-06-04
申请号:US18237091
申请日:2023-08-23
申请人: Japan Display Inc.
IPC分类号: G06V40/13 , G06V40/12 , H01L31/0232 , H10K39/32
CPC分类号: G06V40/12 , H01L31/0232 , H10K39/32
摘要: According to an aspect, a detection device includes: a substrate having a detection region; a plurality of photodiodes provided in the detection region; a first light-transmitting resin layer provided so as to cover the photodiodes; a light-blocking layer provided on the upper side of the first light-transmitting resin layer and provided with openings in regions overlapping the respective photodiodes; a second light-transmitting resin layer provided so as to cover the light-blocking layer; and a plurality of lenses provided on the upper side of the second light-transmitting resin layer so as to overlap the respective photodiodes. The second light-transmitting resin layer is provided so as to cover an end on a peripheral side of the light-blocking layer on a peripheral side of the substrate.
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公开(公告)号:US20240155856A1
公开(公告)日:2024-05-09
申请号:US18412683
申请日:2024-01-15
发明人: YOSHIHIRO SATO
IPC分类号: H10K39/32
CPC分类号: H10K39/32
摘要: An imaging device includes a semiconductor substrate, an impurity region, a first transistor, and a second transistor. The impurity region is located in a semiconductor substrate. The impurity region holds electric charge generated through photoelectric conversion. The first transistor includes a first source, a first drain, a first gate, and a first gate-insulating film. One of the first source and the first drain includes the impurity region. The first gate is electrically connected to the impurity region. The first gate-insulating film is located between the first gate and the semiconductor substrate. The second transistor includes a second gate and a second gate-insulating film. The second gate is electrically connected to the impurity region. The second gate-insulating film is located between the second gate and the semiconductor substrate. The thickness of the first gate-insulating film is greater than the thickness of the second gate-insulating film.
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公开(公告)号:US20240155264A1
公开(公告)日:2024-05-09
申请号:US18404153
申请日:2024-01-04
IPC分类号: H04N25/75 , H01L27/146 , H04N5/14 , H04N23/65 , H04N25/633 , H04N25/772 , H10K39/32
CPC分类号: H04N25/75 , H01L27/14612 , H04N5/144 , H04N23/65 , H04N25/633 , H04N25/772 , H10K39/32 , B60R2300/30 , B60R2300/80
摘要: An imaging system according to the present disclosure includes: an imaging device that is mounted in a vehicle, and captures and generates an image of a peripheral region of the vehicle; and a processing device that is mounted in the vehicle, and executes processing related to a function of controlling the vehicle on the basis of the image. The imaging device includes: a first control line, a first voltage generator that applies a first voltage to the first control line, a first signal line, a plurality of pixels that applies a pixel voltage to the first signal line, a first dummy pixel that applies a voltage corresponding to the first voltage of the first control line to the first signal line in a first period, a converter including a first converter that performs AD conversion on the basis of a voltage of the first signal line in the first period to generate a first digital code, and a diagnosis section that performs diagnosis processing on the basis of the first digital code. The above-described processing device restricts the function of controlling the vehicle on the basis of a result of the diagnosis processing.
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68.
公开(公告)号:US11968895B2
公开(公告)日:2024-04-23
申请号:US16943385
申请日:2020-07-30
申请人: Sony Corporation
发明人: Silvia Rosselli , David Danner , Tzenka Miteva , Gabriele Nelles , Vitor Deichmann , William E. Ford , Dennis Chercka , Vladimir Yakutkin , Lars Peter Scheller , Nikolaus Knorr
IPC分类号: H01L51/00 , C07D221/14 , C07D471/06 , C07D495/04 , C07D495/14 , C07D519/00 , C07F3/06 , H10K85/30 , H10K85/60 , H01L31/028 , H10K10/46 , H10K19/20 , H10K30/00 , H10K30/30 , H10K39/32 , H10K50/16
CPC分类号: H10K85/6572 , C07D221/14 , C07D471/06 , C07D495/04 , C07D495/14 , C07D519/00 , C07F3/06 , H10K85/381 , H10K85/615 , H10K85/621 , H10K85/626 , H10K85/633 , H10K85/636 , H10K85/654 , H10K85/655 , H10K85/657 , H01L31/028 , H10K10/462 , H10K19/20 , H10K30/00 , H10K30/30 , H10K39/32 , H10K50/16 , Y02E10/549
摘要: The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to transparent N materials and/or to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.
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69.
公开(公告)号:US11963440B2
公开(公告)日:2024-04-16
申请号:US17065816
申请日:2020-10-08
发明人: Taejin Choi , Jeong Il Park , Jisoo Shin , Sung Young Yun , Seon-Jeong Lim , Youn Hee Lim , Yeong Suk Choi , Hye Rim Hong
IPC分类号: H01L51/00 , C07D421/04 , C07D421/06 , C07D421/14 , H10K85/60 , H10K19/20 , H10K30/30 , H10K39/32
CPC分类号: H10K85/657 , C07D421/04 , C07D421/06 , C07D421/14 , H10K85/636 , H10K85/654 , H10K19/20 , H10K30/30 , H10K39/32
摘要: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:
In Chemical Formula 1, the definition of each group and parameter is as described in the detailed description.-
公开(公告)号:US11943942B2
公开(公告)日:2024-03-26
申请号:US17467987
申请日:2021-09-07
申请人: Sony Corporation
发明人: Toshiki Moriwaki , Toru Udaka
IPC分类号: H10K30/82 , H01L27/146 , H01L31/0224 , H01L31/0352 , H10K30/81 , H10K39/32
CPC分类号: H10K30/82 , H01L27/14665 , H01L31/0224 , H01L31/035209 , H10K30/81 , H01L31/022466 , H01L31/022475 , H01L2924/0134 , H10K39/32
摘要: An electronic device is provided and includes a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide including a quaternary compound including one or more of indium, gallium and aluminum and further including zinc and oxygen, the first electrode having a laminated structure including a first B layer and a first A layer from a photoelectric conversion layer side, and a work function value of the first A layer of the first electrode being lower than a work function of the first B layer of the first electrode.
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