Solid state image sensor, production method thereof and electronic device

    公开(公告)号:US12035549B2

    公开(公告)日:2024-07-09

    申请号:US17962244

    申请日:2022-10-07

    摘要: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

    IMAGING DEVICE, OPERATION METHOD THEREOF, AND ELECTRONIC DEVICE

    公开(公告)号:US20240196117A1

    公开(公告)日:2024-06-13

    申请号:US18584020

    申请日:2024-02-22

    摘要: An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.

    Detection device and optical filter

    公开(公告)号:US12002280B2

    公开(公告)日:2024-06-04

    申请号:US18237091

    申请日:2023-08-23

    摘要: According to an aspect, a detection device includes: a substrate having a detection region; a plurality of photodiodes provided in the detection region; a first light-transmitting resin layer provided so as to cover the photodiodes; a light-blocking layer provided on the upper side of the first light-transmitting resin layer and provided with openings in regions overlapping the respective photodiodes; a second light-transmitting resin layer provided so as to cover the light-blocking layer; and a plurality of lenses provided on the upper side of the second light-transmitting resin layer so as to overlap the respective photodiodes. The second light-transmitting resin layer is provided so as to cover an end on a peripheral side of the light-blocking layer on a peripheral side of the substrate.

    IMAGING DEVICE
    66.
    发明公开
    IMAGING DEVICE 审中-公开

    公开(公告)号:US20240155856A1

    公开(公告)日:2024-05-09

    申请号:US18412683

    申请日:2024-01-15

    发明人: YOSHIHIRO SATO

    IPC分类号: H10K39/32

    CPC分类号: H10K39/32

    摘要: An imaging device includes a semiconductor substrate, an impurity region, a first transistor, and a second transistor. The impurity region is located in a semiconductor substrate. The impurity region holds electric charge generated through photoelectric conversion. The first transistor includes a first source, a first drain, a first gate, and a first gate-insulating film. One of the first source and the first drain includes the impurity region. The first gate is electrically connected to the impurity region. The first gate-insulating film is located between the first gate and the semiconductor substrate. The second transistor includes a second gate and a second gate-insulating film. The second gate is electrically connected to the impurity region. The second gate-insulating film is located between the second gate and the semiconductor substrate. The thickness of the first gate-insulating film is greater than the thickness of the second gate-insulating film.

    IMAGING SYSTEM AND IMAGING DEVICE
    67.
    发明公开

    公开(公告)号:US20240155264A1

    公开(公告)日:2024-05-09

    申请号:US18404153

    申请日:2024-01-04

    摘要: An imaging system according to the present disclosure includes: an imaging device that is mounted in a vehicle, and captures and generates an image of a peripheral region of the vehicle; and a processing device that is mounted in the vehicle, and executes processing related to a function of controlling the vehicle on the basis of the image. The imaging device includes: a first control line, a first voltage generator that applies a first voltage to the first control line, a first signal line, a plurality of pixels that applies a pixel voltage to the first signal line, a first dummy pixel that applies a voltage corresponding to the first voltage of the first control line to the first signal line in a first period, a converter including a first converter that performs AD conversion on the basis of a voltage of the first signal line in the first period to generate a first digital code, and a diagnosis section that performs diagnosis processing on the basis of the first digital code. The above-described processing device restricts the function of controlling the vehicle on the basis of a result of the diagnosis processing.