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    Image pickup device and electronic apparatus
    1.
    发明授权
    Image pickup device and electronic apparatus 有权

    公开(公告)号：US12015039B2

    公开(公告)日：2024-06-18

    申请号：US17369288

    申请日：2021-07-07

    申请人： SONY GROUP CORPORATION

    发明人： Satoe Miyata ,  Itaru Oshiyama

    IPC分类号： H01L27/146

    CPC分类号： H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14627 ,  H01L27/14636

    摘要： The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.

    Solid-state imaging sensor
    2.
    发明授权
    Solid-state imaging sensor 有权

    公开(公告)号：US11557621B2

    公开(公告)日：2023-01-17

    申请号：US17387127

    申请日：2021-07-28

    申请人： SONY GROUP CORPORATION

    发明人： Itaru Oshiyama ,  Hiroshi Tanaka

    IPC分类号： H01L27/146 ,  G02B1/115 ,  G02B1/118 ,  H01L27/14 ,  H04N5/369 ,  H04N5/357

    摘要： The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

    Solid-state imaging sensor
    3.
    发明授权
    Solid-state imaging sensor 有权

    公开(公告)号：US11990492B2

    公开(公告)日：2024-05-21

    申请号：US18086774

    申请日：2022-12-22

    申请人： SONY GROUP CORPORATION

    发明人： Itaru Oshiyama ,  Hiroshi Tanaka

    IPC分类号： H01L27/146 ,  G02B1/115 ,  G02B1/118 ,  H01L27/14 ,  H04N25/60 ,  H04N25/70

    CPC分类号： H01L27/14625 ,  G02B1/115 ,  G02B1/118 ,  H01L27/14 ,  H01L27/146 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H04N25/60 ,  H04N25/70

    摘要： The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.