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公开(公告)号：US20250022903A1
公开(公告)日：2025-01-16
申请号：US18903037
申请日：2024-10-01
Inventor： HIDENARI KANEHARA , YOSHIHIRO SATO
IPC: H01L27/146
Abstract: An imaging apparatus includes a semiconductor substrate; a wiring layer located on the semiconductor substrate and including wiring lines; pixel electrodes each located on the wiring layer and having one-to-one correspondence to each of the pixels; a shield electrode located on the wiring layer and disposed between the pixel electrodes; a counter electrode located above the pixel electrodes and the shield electrode; and a photoelectric conversion layer located between the pixel electrodes and the shield electrode and the counter electrode. The wiring layer includes a shield wiring line, and FD wiring lines connected respectively to the pixel electrodes. There is a one-to-one correspondence between each of the FD wiring lines and each of the pixel electrodes. The shield wiring line is connected to the shield electrode. The shield wiring line includes openings each overlapping with at least one of the FD wiring lines in a plan view.
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公开(公告)号：US20240155856A1
公开(公告)日：2024-05-09
申请号：US18412683
申请日：2024-01-15
Inventor： YOSHIHIRO SATO
IPC: H10K39/32
CPC classification number: H10K39/32
Abstract: An imaging device includes a semiconductor substrate, an impurity region, a first transistor, and a second transistor. The impurity region is located in a semiconductor substrate. The impurity region holds electric charge generated through photoelectric conversion. The first transistor includes a first source, a first drain, a first gate, and a first gate-insulating film. One of the first source and the first drain includes the impurity region. The first gate is electrically connected to the impurity region. The first gate-insulating film is located between the first gate and the semiconductor substrate. The second transistor includes a second gate and a second gate-insulating film. The second gate is electrically connected to the impurity region. The second gate-insulating film is located between the second gate and the semiconductor substrate. The thickness of the first gate-insulating film is greater than the thickness of the second gate-insulating film.
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公开(公告)号：US20230223411A1
公开(公告)日：2023-07-13
申请号：US18174601
申请日：2023-02-24
Inventor： TAKAYOSHI YAMADA , YOSHIHIRO SATO
IPC: H01L27/146
CPC classification number: H01L27/14603 , H01L27/14643 , H01L27/14636 , H01L27/1463
Abstract: An imaging apparatus includes a pixel region including a first substrate section and pixels, and a peripheral region including a second substrate section and no pixels. Each of the pixels includes a first electrode; a second electrode; a photoelectric conversion layer that is disposed between the first electrode and the second electrode; and a charge accumulation region disposed in the first substrate section. The pixel region includes first penetrating electrodes that electrically connect the first electrode to the charge accumulation region. The peripheral region includes second penetrating electrodes. An areal density of the first penetrating electrodes that is a ratio of an area of the first penetrating electrodes to an area of the pixel region is different from an areal density of the second penetrating electrodes that is a ratio of an area of the second penetrating electrodes to an area of the peripheral region.
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公开(公告)号：US20200286934A1
公开(公告)日：2020-09-10
申请号：US16878667
申请日：2020-05-20
Inventor： JUNJI HIRASE , YOSHIHIRO SATO , YASUYUKI ENDOH , HIROYUKI AMIKAWA
IPC: H01L27/146 , H04N5/378 , H04N5/374 , H04N5/355
Abstract: An imaging device includes a semiconductor substrate including a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that accumulates at least a part of the charges flowing from the first diffusion region, a first transistor that includes a first gate electrode and that includes the second diffusion region as one of a source and a drain, a contact plug electrically connected to the second diffusion region, a capacitive element one end of which is electrically connected to the contact plug, and a second transistor that includes a second gate electrode, the second gate electrode being electrically connected to the one end of the capacitive element.
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公开(公告)号：US20180083004A1
公开(公告)日：2018-03-22
申请号：US15698019
申请日：2017-09-07
Inventor： YOSHIHIRO SATO , RYOTA SAKAIDA , SATOSHI SHIBATA , TAIJI NODA
IPC: H01L27/092 , H01L27/146
CPC classification number: H01L27/0922 , H01L27/14612 , H01L27/14621 , H01L27/14643
Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.
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Patent Agency Ranking
公开(公告)号：US20160079297A1
公开(公告)日：2016-03-17
申请号：US14846947
申请日：2015-09-07
Inventor： YOSHIHIRO SATO , YOSHINORI TAKAMI , KOSAKU SAEKI , JUNJI HIRASE
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14638 , H01L27/14665
Abstract: An imaging device including a unit pixel cell comprising: a semiconductor substrate including a first conductivity type region of a first conductivity type, a first and second impurity regions of a second conductivity type provided in the first conductivity type region; a photoelectric converter located above the semiconductor substrate; and a first transistor including a gate electrode and at least a part of the second impurity region as a source or a drain. The first impurity region is at least partially located in a surface of the semiconductor substrate and electrically connected to the photoelectric converter. The second impurity region is electrically connected to the photoelectric converter via the first impurity region and has an impurity concentration lower than that of the first impurity region. The second impurity region at least partially overlaps the gate electrode in a plan view.
Abstract translation: 一种包括单位像素单元的成像装置，包括：半导体衬底，包括第一导电类型的第一导电类型区域，设置在第一导电类型区域中的第二导电类型的第一和第二杂质区域; 位于半导体衬底上方的光电转换器; 以及第一晶体管，其包括栅极电极和至少一部分第二杂质区域作为源极或漏极。 第一杂质区域至少部分地位于半导体衬底的表面中并电连接到光电转换器。 第二杂质区经由第一杂质区与光电转换器电连接，杂质浓度低于第一杂质区的杂质浓度。 第二杂质区域在平面图中至少部分地与栅电极重叠。
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公开(公告)号：US20150195466A1
公开(公告)日：2015-07-09
申请号：US14666200
申请日：2015-03-23
Inventor： MASAYUKI TAKASE , YOSHIHIRO SATO , JUNJI HIRASE , TOKUHIKO TAMAKI
CPC classification number: H04N5/369 , G02B13/0015 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14665 , H04N5/23212 , H04N5/3696
Abstract: A solid-state imaging device has a plurality of imaging-purpose pixels and a plurality of focus detection-purpose pixels. Each of the imaging-purpose pixels are provided with a first lower electrode, a photoelectric conversion film formed on the first lower electrode, and an upper electrode formed on the photoelectric conversion film. Each of the focus detection-purpose pixels is provided with a second lower electrode, the photoelectric conversion film formed on the second lower electrode, and the upper electrode formed on the photoelectric conversion film. The area of the second lower electrode is smaller than the area of the first lower electrodes. The second lower electrode is provided on a position deviating from a pixel center of a corresponding focus detection-pixel, and two second lower electrodes corresponding to two focus detection purpose pixels included in the plurality of focus detection purpose pixels is arranged in mutually opposite directions.
Abstract translation: 固态成像装置具有多个成像目的像素和多个焦点检测目的像素。 每个成像目的像素设置有形成在第一下电极上的第一下电极，光电转换膜和形成在光电转换膜上的上电极。 每个焦点检测目的像素设置有第二下部电极，形成在第二下部电极上的光电转换膜和形成在光电转换膜上的上部电极。 第二下部电极的面积小于第一下部电极的面积。 第二下电极设置在偏离对应的焦点检测像素的像素中心的位置，并且与多个焦点检测目的像素中包括的两个焦点检测目的像素相对应的两个第二下部电极被布置在相互相反的方向上。
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公开(公告)号：US20240250107A1
公开(公告)日：2024-07-25
申请号：US18625169
申请日：2024-04-02
Inventor： TAKAYUKI NISHITANI , YOSHIHIRO SATO
IPC: H01L27/146 , H04N25/60 , H04N25/77
CPC classification number: H01L27/14636 , H01L27/14643 , H01L27/14614 , H04N25/60 , H04N25/77
Abstract: An imaging device includes: a semiconductor substrate; a plurality of pixels arrayed in a first direction on the semiconductor substrate; and a first signal line positioned above the semiconductor substrate. Each of the plurality of pixels includes: a photoelectric converter that converts light into signal charges; a transistor that includes a gate electrically coupled to the first signal line; and a capacitive element. In a first pixel of the plurality of pixels, at least a part of the transistor overlaps the capacitive element in plan view, and the capacitive element does not overlap the entire width of the first signal line in plan view.
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公开(公告)号：US20230336886A1
公开(公告)日：2023-10-19
申请号：US18340886
申请日：2023-06-26
Inventor： MASASHI MURAKAMI , MAKOTO SHOUHO , YOSHIHIRO SATO , KAZUKO NISHIMURA , JUNJI HIRASE
IPC: H04N25/59 , H01L27/146
CPC classification number: H04N25/59 , H01L27/14643 , H01L27/14612
Abstract: An imaging device includes a charge accumulator, a first transistor, and a first capacitive element. The first transistor has a first source, a first drain, and a first gate electrode electrically connected to one of the first source and the first drain. The first capacitive element holds the charges and has a first terminal. A fixed potential is supplied to the other of the first source and the first drain. One of the first source and the first drain is always electrically connected to the first terminal of the first capacitive element from start to end of an exposure period.
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公开(公告)号：US20210273011A1
公开(公告)日：2021-09-02
申请号：US17322960
申请日：2021-05-18
Inventor： YOSHIHIRO SATO , YOSHINORI TAKAMI
IPC: H01L27/146
Abstract: An imaging device includes a semiconductor substrate, a photoelectric converter that converts incident light into a charge, a first impurity region located in the semiconductor substrate, where the first impurity region accumulates the charge and contains impurities of a first conductivity type, a second impurity region located in the semiconductor substrate, where the second impurity region contains impurities of the first conductivity type and is different from the first impurity region, a third impurity region located in the semiconductor substrate, between the first impurity region and the second impurity region in plan view, where the third impurity region contains impurities of a second conductivity type that differs from the first conductivity type, and a first contact located on the semiconductor substrate and electrically connected to the third impurity region. The first contact includes a semiconductor containing impurities of the second conductivity type.
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