公开(公告)号：US20180006327A1

公开(公告)日：2018-01-04

申请号：US15371063

申请日：2016-12-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SATOSHI SHIBATA ,  YU NISHITANI ,  TAKUJI TSUJITA

IPC: H01M10/0562 ,  H01M10/054

CPC classification number: H01M10/0562 ,  C23C16/308 ,  C23C16/45531 ,  C23C16/45555 ,  C23C16/45561 ,  H01M10/054 ,  H01M2300/0071

Abstract: A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.

公开(公告)号：US20190081131A1

公开(公告)日：2019-03-14

申请号：US16111260

申请日：2018-08-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKEYOSHI TOKUHARA ,  SATOSHI SHIBATA

IPC: H01L49/02 ,  H01L21/02 ,  H01L27/30 ,  H01L27/146

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

公开(公告)号：US20180083004A1

公开(公告)日：2018-03-22

申请号：US15698019

申请日：2017-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  RYOTA SAKAIDA ,  SATOSHI SHIBATA ,  TAIJI NODA

IPC: H01L27/092 ,  H01L27/146

CPC classification number: H01L27/0922 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14643

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.

公开(公告)号：US20170005365A1

公开(公告)日：2017-01-05

申请号：US15190167

申请日：2016-06-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MIYUKI NAKAI ,  SATOSHI SHIBATA

IPC: H01M10/0562 ,  C23C14/34 ,  C23C14/06 ,  H01M10/0525 ,  H01M10/0585

CPC classification number: H01M10/0562 ,  C23C16/308 ,  C23C16/45531 ,  C23C16/45555 ,  C23C16/45561 ,  H01M10/052 ,  H01M2300/0071

Abstract: An oxynitride film contains a metal element and a network former. An XPS spectrum of the oxynitride film exhibits a first peak component originating from triply coordinated nitrogen and a second peak component originating from doubly coordinated nitrogen. An intensity of the first peak component is less than or equal to a half of an intensity of the second peak component.

Abstract translation: 氧氮化物膜包含金属元素和网络形成剂。 氮氧化物膜的XPS光谱显示源自三配位氮的第一峰组分和源自双配位氮的第二峰组分。 第一峰值分量的强度小于或等于第二峰值分量的强度的一半。

公开(公告)号：US20170005358A1

公开(公告)日：2017-01-05

申请号：US15188060

申请日：2016-06-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MIYUKI NAKAI ,  SATOSHI SHIBATA

IPC: H01M10/058 ,  H01M10/0562 ,  C03C17/22 ,  H01M10/0525 ,  C23C16/30 ,  C23C16/455

CPC classification number: C03C17/22 ,  C03C2217/28 ,  C03C2218/152 ,  C23C16/308 ,  C23C16/45527 ,  C23C16/45531 ,  H01M10/0525 ,  H01M10/0562

Abstract: A method for producing an oxynitride film includes: (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying at least one of a nitrogen gas and an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor.

Abstract translation: 一种氧氮化物膜的制造方法包括：（A）将含有网络形成体的第一前体供给到放置基板的反应器中; （B）将氧气和臭氧气体中的至少一种供给到反应器中; （C）将含有碱金属元素和碱土金属元素中的至少一种的第二前体供应到反应器中; （D）将氮气和氨气中的至少一种供给到反应器中; 和（E）将净化气体供应到反应器中。