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公开(公告)号:US20210265521A1
公开(公告)日:2021-08-26
申请号:US17238250
申请日:2021-04-23
Inventor: SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , SANSHIRO SHISHIDO
IPC: H01L31/112 , H01L31/0352
Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.
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公开(公告)号:US20210099658A1
公开(公告)日:2021-04-01
申请号:US17005240
申请日:2020-08-27
Inventor: TAKEYOSHI TOKUHARA , YOSHIAKI SATOU , YUSUKE OKADA
Abstract: An imaging device includes: a photoelectric converter that includes first and second electrodes and a photoelectric conversion layer therebetween and that generates signal charge; a capacitor having first and second terminals, the first terminal being connected to the first electrode; a first voltage supply circuit that selectively supplies at least two different voltages to the second electrode; and a second voltage supply circuit that selectively supplies at least two different voltages to the second terminal. In a predetermined period in each frame, when the first voltage supply circuit supplies a first voltage to the second electrode, the second voltage supply circuit supplies a second voltage to the second terminal, and when the first voltage supply circuit supplies a third voltage higher than the first voltage to the second electrode, the second voltage supply circuit supplies a fourth voltage lower than the second voltage to the second terminal.
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公开(公告)号:US20180294316A1
公开(公告)日:2018-10-11
申请号:US15938374
申请日:2018-03-28
Inventor: TAKEYOSHI TOKUHARA , SHINICHI MACHIDA
CPC classification number: H01L27/307 , H01L51/0046 , H01L51/0059 , H01L51/0072 , H01L51/0073 , H01L51/0078 , H01L51/0094 , H01L51/4273 , H01L51/442 , H01L51/5004 , H01L2251/308 , H04N5/353 , H04N5/374 , Y02E10/549
Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and an electron-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit connected to the first electrode. The photoelectric converter is adapted to be applied with a voltage between the first and second electrodes. An electron-blocking material in the electron-blocking layer has an ionization potential higher than both a work function of a conducting material in the first electrode and an ionization potential of a photoelectric conversion material in the photoelectric conversion layer, which allows the photoelectric converter to have a range of the voltage within which a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer is substantially equal to that when no light is incident. The range of the voltage is 0.5 V or more.
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公开(公告)号:US20170263669A1
公开(公告)日:2017-09-14
申请号:US15441308
申请日:2017-02-24
Inventor: TOKUHIKO TAMAKI , TAKEYOSHI TOKUHARA
IPC: H01L27/146 , H04N5/369 , H04N5/355
CPC classification number: H01L27/14665 , H01L27/1461 , H01L27/14614 , H01L27/14627 , H01L27/14636 , H01L27/307 , H04N5/355 , H04N5/35563 , H04N5/3698
Abstract: An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1
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公开(公告)号:US20210202551A1
公开(公告)日:2021-07-01
申请号:US17204851
申请日:2021-03-17
Inventor: KATSUYA NOZAWA , TAKEYOSHI TOKUHARA , NOZOMU MATSUKAWA , SANSHIRO SHISHIDO
IPC: H01L27/146
Abstract: An imaging device includes a pixel electrode, a counter electrode, a first quantum dot that includes a first core which generates first signal charge and a first shell, a second quantum dot that includes a second core which generates second signal charge and a second shell. In a case where the potential difference between the pixel electrode and the counter electrode is a first potential difference, the first signal charge does not pass through the first shell and is held in the first core and the second signal charge passes through the second shell and is collected by the pixel electrode. In a case where the potential difference between the pixel electrode and the counter electrode is a second potential difference which is larger than the first potential difference, the first signal charge passes through the first shell and is collected by the pixel electrode.
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公开(公告)号:US20200322556A1
公开(公告)日:2020-10-08
申请号:US16906446
申请日:2020-06-19
Inventor: TAKEYOSHI TOKUHARA , YASUO MIYAKE , SANSHIRO SHISHIDO
Abstract: An imaging device includes a pixel including a permittivity modulation element that includes opposite and pixel electrodes and a permittivity modulation structure whose permittivity changes according to the radiation of light, a capacitive element that includes first and second electrodes, and a detection circuit that outputs a signal corresponding to the potential of the pixel electrode. Also provided are a voltage supply circuit that applies first and second voltages in different first and second periods to one of the opposite electrode and the first electrode, and a signal processing circuit that generates a third signal being a difference between a first signal output from the detection circuit in the first period and a second signal output from the detection circuit in the second period. The potential difference between the opposite electrode and the first electrode when the second voltage is applied is less than when the first voltage is applied.
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公开(公告)号:US20180227525A1
公开(公告)日:2018-08-09
申请号:US15876258
申请日:2018-01-22
Inventor: SANSHIRO SHISHIDO , TAKEYOSHI TOKUHARA , MASAAKI YANAGIDA
IPC: H04N5/378 , H01L27/146
Abstract: An imaging device of the present disclosure includes: an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric converter generating signal charge by photoelectric conversion, and a charge detection circuit connected to the first electrode, the charge detection circuit detecting the signal charge; a signal line electrically coupled to the first electrode; and a voltage supply circuit selectively supplying a first voltage and a second voltage different from the first voltage to the signal line.
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公开(公告)号:US20180227510A1
公开(公告)日:2018-08-09
申请号:US15873190
申请日:2018-01-17
Inventor: SHINICHI MACHIDA , MASASHI MURAKAMI , TAKEYOSHI TOKUHARA , MASAAKI YANAGIDA , SANSHIRO SHISHIDO , MANABU NAKATA , MASUMI IZUCHI
CPC classification number: H04N5/332 , H01L27/307 , H04N5/374 , H04N5/378 , H04N9/04553 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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公开(公告)号:US20180219047A1
公开(公告)日:2018-08-02
申请号:US15939381
申请日:2018-03-29
Inventor: TAKEYOSHI TOKUHARA , TOKUHIKO TAMAKI
CPC classification number: H01L27/307 , G01J1/0407 , G01J1/42 , G01J5/0853 , G01J5/24 , H01L51/0077 , H01L51/4273 , H01L51/442 , H04N5/33 , H04N5/378 , Y02E10/549
Abstract: A photosensor includes: a first electrode; a second electrode; a photoelectric conversion layer that is located between the first and second electrodes and generates electric charges; a first charge blocking layer located between the first electrode and the photoelectric conversion layer; a second charge blocking layer located between the second electrode and the photoelectric conversion layer; a voltage supply circuit that applies a voltage to at least one of the first and second electrodes such that an electric field is generated in the photoelectric conversion layer; and a detection circuit that detects a signal corresponding to a change in capacitance between the first and second electrodes. The first charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the first electrode. The second charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the second electrode.
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公开(公告)号:US20210202582A1
公开(公告)日:2021-07-01
申请号:US17205061
申请日:2021-03-18
Inventor: KATSUYA NOZAWA , TAKEYOSHI TOKUHARA , NOZOMU MATSUKAWA , SANSHIRO SHISHIDO
Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.
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