公开(公告)号：US20120132802A1

公开(公告)日：2012-05-31

申请号：US13381638

申请日：2010-06-08

Applicant: Noriaki Arai ,  Tohru Ishitani

Inventor： Noriaki Arai ,  Tohru Ishitani

IPC: H01J27/02 ,  H01J37/26

CPC classification number: H01J27/26 ,  H01J37/023 ,  H01J37/08 ,  H01J37/28 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807

Abstract: A gas field ionization ion source apparatus is provided which is small-sized, has high-performance, and is capable of performing a tilt adjustment in a state in which an emitter tip position is maintained approximately constant. An emitter (1) is surrounded by a chamber wall (4) of an emitter chamber and ions are emitted from the tip of the emitter (1). A gas that is an ion material is introduced into the emitter chamber, through an extraction electrode (3) to which a high voltage is applied and a tube (15). The emitter (1) is cooled by a freezing means (10) through a metallic net (11) and an emitter base (12). The emitter base (12) is fixed to a movable portion (13a) of a tilting means (13). The movable portion (13a) is connected to a non-movable portion (13b) through a sliding surface (14). The sliding surface (14) forms a part of a cylindrical surface whose central axis is an axis that passes through the tip of the emitter (1) and is orthogonal to an optical axis. If the surface forms such a shape, and the amount of sliding of the sliding surface (14) is controlled, control on the tilt of the emitter (1) can be performed without moving the tip of the emitter (1).

Abstract translation: 提供了一种小型化，高性能的气体电离离子源装置，并且能够在发射极尖端位置保持大致恒定的状态下进行倾斜调整。 发射器（1）被发射器室的室壁（4）包围，离子从发射器（1）的尖端发射。 作为离子材料的气体通过施加高电压的引出电极（3）和管（15）引入发射室。 发射器（1）由冷冻装置（10）通过金属网（11）和发射极基座（12）冷却。 发射极基座（12）固定在倾斜装置（13）的可动部分（13a）上。 可移动部分（13a）通过滑动表面（14）连接到不可移动部分（13b）。 滑动表面（14）形成圆柱形表面的一部分，其中心轴是穿过发射器（1）的尖端并与光轴正交的轴线。 如果表面形成这样的形状，并且控制滑动表面（14）的滑动量，则可以在不移动发射器（1）的尖端的情况下执行对发射器（1）的倾斜的控制。

公开(公告)号：US08164057B2

公开(公告)日：2012-04-24

申请号：US12446757

申请日：2007-10-23

Applicant: Dov Shachal

Inventor： Dov Shachal

IPC: G01N23/00

CPC classification number: H01J37/285 ,  H01J37/06 ,  H01J37/20 ,  H01J37/28 ,  H01J37/301 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/15 ,  H01J2237/164 ,  H01J2237/182 ,  H01J2237/2002 ,  H01J2237/2006 ,  H01J2237/2605 ,  H01J2237/28 ,  H01J2237/2801 ,  H01J2237/2806 ,  H01J2237/2807

Abstract: An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.

Abstract translation: 接口，扫描电子显微镜和用于观察位于非真空环境中的物体的方法。 该方法包括：使在真空环境中产生的至少一个电子束通过孔阵列中的至少一个孔并通过至少一个密封所述至少一个孔的超薄膜; 其中所述至少一个电子束被引向所述物体; 其中所述至少一个超薄膜承受真空环境和非真空环境之间的压力差; 以及检测响应于所述至少一个电子束和所述物体之间的相互作用而产生的微粒。

公开(公告)号：US20120061236A1

公开(公告)日：2012-03-15

申请号：US13226423

申请日：2011-09-06

Applicant: Sven Kiontke

Inventor： Sven Kiontke

IPC: C23C14/46

CPC classification number: H01J37/305 ,  H01J37/18 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/045

Abstract: In a method of machining a substrate by an ion beam, the ion beam is guided by an orifice plate formed at least partly of carbon-containing material. Between the orifice plate and the substrate, an educt that is reactive with carbon is guided such that carbon released from the orifice plate by the ion beam oxidizes. An ion beam device for machining a substrate includes an ion beam source and at least one orifice plate, disposed between the ion beam source and the substrate, for adjusting a cross section of and guiding the ion beam. The orifice plate is formed of carbon-containing material. A delivery unit, for delivering an educt that is reactive with carbon, is disposed such that the educt can be guided between the orifice plate and the substrate, so that carbon released from the orifice plate by the ion beam oxidizes.

Abstract translation: 在通过离子束加工衬底的方法中，离子束由至少部分由含碳材料形成的孔板引导。 在孔板和基板之间，引导与碳反应的析出物，使得通过离子束从孔板释放的碳氧化。 用于加工衬底的离子束装置包括设置在离子束源和衬底之间的离子束源和至少一个孔板，用于调节离子束的横截面和引导离子束。 孔板由含碳材料形成。 设置用于输送与碳反应的喷射器的输送单元，使得喷射管能够在孔板和基板之间被引导，使得通过离子束从孔板释放的碳被氧化。

公开(公告)号：US20110291022A1

公开(公告)日：2011-12-01

申请号：US12944407

申请日：2010-11-11

Applicant: William D. Lee ,  Marvin Farley ,  William DiVergilio

Inventor： William D. Lee ,  Marvin Farley ,  William DiVergilio

IPC: H01J37/20 ,  H01J37/18 ,  H01J37/08

CPC classification number: H01L21/67213 ,  H01J37/185 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/24585 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/67248

Abstract: An ion implantation system, method, and apparatus for abating condensation in a cold ion implant is provided. An ion implantation apparatus is configured to provide ions to a workpiece positioned in a process chamber. A sub-ambient temperature chuck supports the workpiece during an exposure of the workpiece to the plurality of ions. The sub-ambient temperature chuck is further configured to cool the workpiece to a processing temperature, wherein the process temperature is below a dew point of an external environment. A load lock chamber isolates a process environment of the process chamber from the external environment. A light source provides a predetermined wavelength of electromagnetic radiation to the workpiece concurrent with the workpiece residing within the load lock chamber, wherein the predetermined wavelength or range of wavelengths is associated with a maximum radiant energy absorption range of the workpiece, wherein the light source is configured to selectively heat the workpiece.

Abstract translation: 提供了一种用于减少冷离子注入中的冷凝的离子注入系统，方法和装置。 离子注入装置被配置为向位于处理室中的工件提供离子。 在工件暴露于多个离子的过程中，亚环境温度卡盘支撑工件。 次环境温度卡盘进一步构造成将工件冷却至加工温度，其中工艺温度低于外部环境的露点。 加载锁定室将处理室的处理环境与外部环境隔离。 光源向驻留在负载锁定室内的工件提供与工件同时的预定波长的电磁辐射，其中预定波长或波长范围与工件的最大辐射能吸收范围相关联，其中光源是 被配置为选择性地加热所述工件。

公开(公告)号：US07947966B2

公开(公告)日：2011-05-24

申请号：US12183961

申请日：2008-07-31

Applicant: William F. DiVergilio

Inventor： William F. DiVergilio

IPC: H01J27/02

CPC classification number: H01J27/16 ,  H01J27/08 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/31701

Abstract: An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.

Abstract translation: 离子源包括包括等离子体产生部件的第一等离子体室和用于接收第一气体的第一气体入口，使得所述等离子体产生部件和所述第一气体相互作用以在所述第一等离子体室内产生第一等离子体，其中所述第一等离子体室 进一步限定用于从所述第一等离子体提取电子的孔，以及包括用于接收第二气体的第二气体入口的第二等离子体室，其中所述第二等离子体室还限定与所述第一等离子体室的孔基本对准的孔，用于 接收从其提取的电子，使得电子和第二气体相互作用以在所述第二等离子体室内产生第二等离子体，所述第二等离子体室还限定用于从所述第二等离子体提取离子的提取孔。

公开(公告)号：US20110070722A1

公开(公告)日：2011-03-24

申请号：US12957631

申请日：2010-12-01

Applicant: Junichi KOEZUKA ,  Hiroshi OHKI ,  Taku HASEGAWA ,  Mami GOTO

Inventor： Junichi KOEZUKA ,  Hiroshi OHKI ,  Taku HASEGAWA ,  Mami GOTO

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/302 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2236 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621

Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.

Abstract translation: 即使在具有灯丝的离子掺杂装置的各种条件下进行掺杂的情况下，也可以进行具有抑制的丝状劣化的掺杂。 离子掺杂完成后，停止供给原料气体，并保持供给氢或稀有气体。 之后，灯丝的电流降低，灯丝温度降低。 因此，在降低灯丝温度时，灯丝周围的原料气体被氢气或稀有气体置换。

公开(公告)号：US07879701B2

公开(公告)日：2011-02-01

申请号：US11474499

申请日：2006-06-26

Applicant: Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

Inventor： Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

IPC: H01L21/425

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/302 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2236 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621

Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.

公开(公告)号：US07853364B2

公开(公告)日：2010-12-14

申请号：US11947720

申请日：2007-11-29

Applicant: James D. Deakins ,  Dennis J. Hansen ,  Leonard J. Mahoney ,  Tolga Erguder ,  David M. Burtner

Inventor： James D. Deakins ,  Dennis J. Hansen ,  Leonard J. Mahoney ,  Tolga Erguder ,  David M. Burtner

IPC: G06F19/00

CPC classification number: H01J27/02 ,  H01J37/08 ,  H01J37/304 ,  H01J2237/006 ,  H01J2237/31

Abstract: An ion source, often used for materials processing applications in a vacuum processing chamber, is provided with an adaptive control system. The adaptive control system has a microprocessor and memory that regulate the inputs of power and gas flow into the ion source. The adaptive control system monitors and stores the dynamic input impedance properties and status of input devices to the ion source. The adaptive control system may additionally control magnetic fields within the ion source. The adaptive control system provides a multivariable control for driving any combination of input power, gas flow, magnetic field, or electrostatic ion beam extraction or acceleration field into the ion source.

Abstract translation: 通常用于真空处理室中的材料处理应用的离子源具有自适应控制系统。 自适应控制系统具有微处理器和存储器，其调节输入到离子源的功率和气体的输入。 自适应控制系统监测和存储输入设备的动态输入阻抗特性和状态到离子源。 自适应控制系统可以另外控制离子源内的磁场。 自适应控制系统提供多变量控制，用于将输入功率，气体流量，磁场或静电离子束提取或加速场的任何组合驱动到离子源中。

公开(公告)号：US07825389B2

公开(公告)日：2010-11-02

申请号：US11950128

申请日：2007-12-04

Applicant: John J. Hautala ,  Matthew C. Gwinn ,  Jerald P. Dykstra

Inventor： John J. Hautala ,  Matthew C. Gwinn ,  Jerald P. Dykstra

IPC: G21G5/00

CPC classification number: H01J37/304 ,  H01J27/026 ,  H01J37/3053 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/24507 ,  H01J2237/30455 ,  H01L21/26566

Abstract: Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus.

Abstract translation: 用于控制由气体混合物中的多种处理气体形成的气体簇离子束的方法和装置。 所述方法和装置包括测量与气体混合物的组成相关的气体分析数据，并响应于检测到的参数来修改工件的照射。 气体分析数据可以从气体源到气体簇离子束装置的气体混合物的组成的样本或气体团簇离子束装置的真空容器内的残留气体的样品的样品得到。

公开(公告)号：US07816656B2

公开(公告)日：2010-10-19

申请号：US12256128

申请日：2008-10-22

Applicant: Christian Krueger ,  Rastislav Kocis ,  Marek Braun ,  Niels-Wieland Hauptmann ,  Heinz Seidel

Inventor： Christian Krueger ,  Rastislav Kocis ,  Marek Braun ,  Niels-Wieland Hauptmann ,  Heinz Seidel

IPC: H01J37/317 ,  H01J37/08 ,  H01J49/10

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0213 ,  H01J2237/022 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/6659 ,  H01L29/7833

Abstract: By operating an implantation tool with a source gas having a halogen fraction of 66 atomic percent or less relative to the total composition of the source gas, an in situ cleaning effect may be achieved while performing an implantation process.

Abstract translation: 通过操作具有相对于源气体的总组成具有66原子百分比或更小的卤素部分的源气体的植入工具，可以在执行注入过程时实现原位清洁效果。