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103 条记录 (耗时 0.028 秒)

    Semiconductor device with reduced loading effect
    62.
    发明授权
    Semiconductor device with reduced loading effect 有权

    公开(公告)号：US11264281B2

    公开(公告)日：2022-03-01

    申请号：US16924686

    申请日：2020-07-09

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Wei-Lun Chen ,  Li-Te Lin ,  Chao-Hsien Huang

    IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/10

    摘要： The present disclosure relates to a method for forming a semiconductor structure includes depositing a dielectric layer on a substrate and depositing a patterning layer on the dielectric layer. The method also includes performing a first etching process on the patterning layer to form a first region including a first plurality of blocks at a first pattern density and a second region including a second plurality of blocks at a second pattern density that is lower than the first pattern density. The method also includes performing a second etching process on the second plurality of blocks to decrease a width of each block of the second plurality of blocks and etching the dielectric layer and the substrate using the first and second pluralities of blocks to form a plurality of fin structures.

    Method and equipment for forming gaps in a material layer
    63.
    发明授权
    Method and equipment for forming gaps in a material layer 有权

    公开(公告)号：US11244856B2

    公开(公告)日：2022-02-08

    申请号：US15843185

    申请日：2017-12-15

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Chan-Syun David Yang ,  Li-Te Lin ,  Yu-Ming Lin

    IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/67 ,  H01L21/683

    摘要： A method and equipment for forming gaps in a material layer are provided. The equipment includes a supporter and an etching device. The supporter is configured to support a semiconductor device. In the method for forming gaps in a material layer, at first, the semiconductor device is provided. Then, a material layer of the semiconductor device is etched to form vertical gaps in the material layer. Thereafter, the vertical sidewall of each of the vertical gaps is etched in accordance with a predetermined gap profile by using directional charged particle beams. The directional charged particle beams are provided by the etching device, and each of the directional charged particle beams has two energy peaks.

    SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    64.
    发明申请
    SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权

    公开(公告)号：US20220020644A1

    公开(公告)日：2022-01-20

    申请号：US17143698

    申请日：2021-01-07

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Han-Yu LIN ,  Jhih-Rong Huang ,  Yen-Tien Tung ,  Tzer-Min Shen ,  Fu-Ting Yen ,  Gary Chan ,  Keng-Chu Lin ,  Li-Te Lin ,  Pinyen Lin

    IPC分类号： H01L21/8234 ,  H01L21/3065

    摘要： The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a fin structure over a substrate. The fin structure can include a first channel layer and a sacrificial layer. The method can further include forming a first recess structure in a first portion of the fin structure, forming a second recess structure in the sacrificial layer of a second portion of the fin structure, forming a dielectric layer in the first and second recess structures, and performing an oxygen-free cyclic etching process to etch the dielectric layer to expose the channel layer of the second portion of the fin structure. The process of performing the oxygen-free cyclic etching process can include performing a first etching process to selectively etch the dielectric layer over the channel layer of the second portion of the fin structure with a first etching selectivity, and performing a second etching process to selectively etch the dielectric layer over the channel layer of the second portion of fin structure with a second etching selectivity greater than the first etching selectivity

    Air gap spacer and related methods
    66.
    发明授权
    Air gap spacer and related methods 有权

    公开(公告)号：US11205700B2

    公开(公告)日：2021-12-21

    申请号：US16504117

    申请日：2019-07-05

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chan Syun David Yang ,  Li-Te Lin

    IPC分类号： H01L29/10 ,  H01L29/66 ,  H01L21/3065 ,  H01L29/78

    摘要： A method of forming an air-gap spacer in a semiconductor device includes providing a device including a gate stack, a plurality of spacer layers disposed on a sidewall of the gate stack, and a source/drain feature adjacent to the gate stack. In some embodiments, a first spacer layer of the plurality of spacer layers is removed to form an air gap on the sidewall of the gate stack. In various examples, a first sealing layer is then deposited over a top portion of the air gap to form a sealed air gap, and a second sealing layer is deposited over the first sealing layer. Thereafter, a first self-aligned contact (SAC) layer is etched from over the source/drain feature using a first etching process. In various embodiments, the first etching process selectively etches the first SAC layer while the first and second sealing layers remain unetched.

    Semiconductor Device and Method of Manufacture
    70.
    发明申请
    Semiconductor Device and Method of Manufacture 有权

    公开(公告)号：US20210111071A1

    公开(公告)日：2021-04-15

    申请号：US17113836

    申请日：2020-12-07

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chan Syun David Yang ,  Li-Te Lin ,  Chun-Jui Huang

    IPC分类号： H01L21/768 ,  H01L29/66 ,  H01L23/535 ,  H01L29/78 ,  H01L29/417

    摘要： A semiconductor device such as a fin field effect transistor and its method of manufacture are provided. In some embodiments gate spacers are formed over a semiconductor fin, and a first gate stack is formed over the fin. A first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack, and a second sacrificial material with a large selectivity is formed over a source/drain contact plug. Etching processes are utilized to form openings through the first sacrificial material and through the second sacrificial material, and the openings are filled with a conductive material.