公开(公告)号：US09389510B2

公开(公告)日：2016-07-12

申请号：US14080430

申请日：2013-11-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Wei Wang ,  Ching-Yu Chang

IPC分类号： G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/11

CPC分类号： G03F7/095 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

摘要： A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo—acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.

摘要翻译： 光刻方法包括在基板上形成感光层，曝光感光层，烘烤感光层，以及显影曝光的感光层。 感光层包括响应于与酸的反应而变成可溶于碱溶液的聚合物，响应于辐射能而分解形成酸的多个光酸发生剂（PAG），和多个具有沸点分布的猝灭剂 约200℃至约350℃。猝灭剂还具有分布在300道尔顿和约20000道尔顿之间的分子量，并且垂直分布在感光层中，使得感光层顶部的第一浓度C1大于 在感光层的底部具有第二浓度C2。

公开(公告)号：US20160124310A1

公开(公告)日：2016-05-05

申请号：US14529944

申请日：2014-10-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chang Lilin ,  Ching-Yu Chang

IPC分类号： G03F7/32 ,  G03F7/20

CPC分类号： G03F7/322 ,  G03F7/20

摘要： A method for lithography patterning includes providing a substrate; forming a material layer over the substrate; exposing the material layer to a radiation, resulting in an exposed material layer; and removing a portion of the exposed material layer in a developer, resulting in a patterned material layer. The developer is an alkaline aqueous solution having an organic base that is a quaternary ammonium hydroxide. In an embodiment, the organic base has a bulky group in its side chain, reducing its etching distance. In another embodiment, the organic base includes electron withdrawing groups, reducing its basicity. In yet another embodiment, the developer has a loading of the quaternary ammine ranging from about 0.01% to about 2.37%. The developer results in reduced line edge roughness and reduced line width roughness in the patterned material layer.

摘要翻译： 一种用于光刻图案化的方法包括提供衬底; 在衬底上形成材料层; 将材料层暴露于辐射，产生暴露的材料层; 并且在显影剂中除去暴露的材料层的一部分，得到图案化的材料层。 显影剂是具有作为季铵氢氧化物的有机碱的碱性水溶液。 在一个实施方案中，有机碱在其侧链中具有大体积基团，从而减少其蚀刻距离。 在另一个实施方案中，有机碱包括吸电子基团，降低其碱度。 在另一个实施方案中，显影剂具有约0.01％至约2.37％的季铵的负载。 显影剂导致图案化材料层中的线边缘粗糙度降低和线宽粗糙度降低。

公开(公告)号：US20160124300A1

公开(公告)日：2016-05-05

申请号：US14991233

申请日：2016-01-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-De Ho ,  Ching-Yu Chang ,  Kuei-Liang Lu ,  Ming-Feng Shieh

IPC分类号： G03F1/38

CPC分类号： G03F1/38 ,  G03F7/70466 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/1211

摘要： Disclosed is a mask for use in a lithography system having a defined resolution. The mask comprises first and second patterns that are greater than the defined resolution and a sub-resolution feature that is less than the defined resolution. Portions of the first and second patterns are positioned close to each other and separated by the sub-resolution feature in an intersection area. The size and shape of the sub-resolution feature are such that when the mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the interconnection area.

摘要翻译： 公开了一种用于具有确定分辨率的光刻系统中的掩模。 该掩模包括大于所定义的分辨率的第一和第二图案以及小于定义的分辨率的子分辨率特征。 第一和第二图案的部分彼此靠近并且在交叉区域中被子分辨率特征隔开。 子分辨率特征的尺寸和形状使得当在光刻系统中使用掩模时，所得到的图案包括通过互连区域彼此互连的第一和第二图案。

公开(公告)号：US09256128B2

公开(公告)日：2016-02-09

申请号：US14490517

申请日：2014-09-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Chen-Yu Liu

IPC分类号： G03F7/11 ,  H01L21/027 ,  C08F220/18 ,  H01L21/02 ,  H01L21/311 ,  C08F220/22 ,  G03F7/40 ,  G03F7/42 ,  C11D11/00

CPC分类号： H01L21/0206 ,  C08F220/18 ,  C08F220/22 ,  C11D11/0047 ,  G03F7/11 ,  G03F7/40 ,  G03F7/425 ,  H01L21/0212 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/0276 ,  H01L21/31111 ,  H01L21/31133 ,  H01L29/66795

摘要： A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. The anti-reflective layers are removed using a fluid.

摘要翻译： 提供了一种用于抗反射层的系统和方法。 在一个实施例中，抗反射层包括浮动部件，以在抗反射层分散之后沿着抗反射层的顶表面形成浮动区域。 漂浮的组分可以是漂浮的交联剂，漂浮的聚合物树脂或漂浮的催化剂。 浮动交联剂，漂浮聚合物树脂或浮动催化剂可以包含氟原子。 使用流体除去抗反射层。

公开(公告)号：US20160005595A1

公开(公告)日：2016-01-07

申请号：US14849154

申请日：2015-09-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Yu Liu ,  Ching-Yu Chang

IPC分类号： H01L21/027 ,  H01L21/308 ,  H01L21/02

CPC分类号： H01L21/0276 ,  C08F220/18 ,  C08F220/22 ,  C11D11/0047 ,  G03F7/0751 ,  G03F7/091 ,  G03F7/11 ,  G03F7/40 ,  G03F7/405 ,  G03F7/425 ,  H01L21/02118 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31133

摘要： A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.

摘要翻译： 提供了一种用于抗反射层的系统和方法。 在一个实施例中，抗反射层包括浮动添加剂，以在抗反射层分散之后沿着抗反射层的顶表面形成浮动添加剂区域。 浮动添加剂可以包含与分解的添加剂基团结合的氟单元分解的添加剂组。 此外，可以通过使用沉积工艺或相分离施加粘合促进层来增加中间层和光致抗蚀剂之间的粘合性，或者可以在中间层和光致抗蚀剂之间进行交联。

公开(公告)号：US20150187564A1

公开(公告)日：2015-07-02

申请号：US14657954

申请日：2015-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Kuei-Liang Lu ,  Ming-Feng Shieh

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033

CPC分类号： H01L21/0271 ,  G03F7/11 ,  G03F7/167 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/6708

摘要： A method of semiconductor device fabrication including placing a substrate having a first and second features disposed thereon in a vaporizing spray deposition system. An atomizing spray head of the vaporizing spray deposition system is used to deposit a conformal polymer layer on the first and second features. The first feature having the layer of the polymer disposed thereon and having a first width. A spray trim process is performed on the first and second features having the polymer layer disposed thereon using the atomizing spray head.

摘要翻译： 一种半导体器件制造方法，包括将其上设置有第一和第二特征的衬底放置在蒸发喷涂沉积系统中。 蒸发喷雾沉积系统的雾化喷头用于在第一和第二特征上沉积共形聚合物层。 第一特征具有设置在其上并具有第一宽度的聚合物层。 使用雾化喷头对其上设置有聚合物层的第一和第二特征进行喷涂修整工艺。

公开(公告)号：US20150132702A1

公开(公告)日：2015-05-14

申请号：US14599048

申请日：2015-01-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Ming-Feng Shieh ,  Wen-Hung Tseng

IPC分类号： G03F7/004 ,  G03F7/30 ,  H01L21/027

CPC分类号： G03F7/0045 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/32 ,  H01L21/0274

摘要： A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.

摘要翻译： 一种制造半导体产品的方法包括将光致抗蚀剂层施加到基底上，所述光致抗蚀剂层在光致抗蚀剂层的上部比在光致抗蚀剂层的下部具有更高的酸浓度。 该方法还包括通过包括特征的掩模将光致抗蚀剂层暴露于光源，该光致抗蚀剂层包括将扩散到受特征影响的光致抗蚀剂层的区域中的浮动扩散酸，而不是 扩散到由掩模形成的特征中。

公开(公告)号：US09012132B2

公开(公告)日：2015-04-21

申请号：US13732944

申请日：2013-01-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang

IPC分类号： G03F7/20 ,  H01L21/02

CPC分类号： G03F7/20 ,  H01L21/02109 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0276

摘要： Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.

摘要翻译： 提供了一种方法，包括提供衬底并在衬底上形成底部抗反射涂层（BARC）。 BARC包括覆盖第二部分的第一部分，其具有与第一部分不同的组成。 不同的组合物可以提供BARC在显影剂中的不同溶解性质。 在BARC的第一部分上形成光致抗蚀剂层。 然后照射和显影光致抗蚀剂层。 显影剂包括使用显影剂去除光致抗蚀剂层的区域和BARC的第一和第二部分的区域。

公开(公告)号：US08936903B2

公开(公告)日：2015-01-20

申请号：US13791992

申请日：2013-03-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Yu Chang ,  Ming-Feng Shieh ,  Wen-Hung Tseng

IPC分类号： G03F7/26 ,  G03F7/004

CPC分类号： G03F7/0045 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/32 ,  H01L21/0274

摘要： A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.

公开(公告)号：US08932799B2

公开(公告)日：2015-01-13

申请号：US13829301

申请日：2013-03-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hau Wu ,  Ching-Yu Chang

IPC分类号： G03C1/00 ,  G03F7/00 ,  H01L21/00 ,  H01L21/027 ,  G03F7/038 ,  H01L21/308

CPC分类号： G03F7/038 ,  G03F7/0382 ,  H01L21/0274 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

摘要： A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.

摘要翻译： 提供了一种用于光致抗蚀剂的系统和方法。 在一个实施方案中，交联或偶联试剂包括在光致抗蚀剂组合物内。 交联或偶联试剂将与光致抗蚀剂组合物内的聚合物树脂反应，将聚合物交联或连接在一起，产生分子量较大的聚合物。 这种较大的分子量将导致光致抗蚀剂的溶解速率降低，导致该线更好的聚焦深度。