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公开(公告)号：US10665615B2
公开(公告)日：2020-05-26
申请号：US16569070
申请日：2019-09-12
IPC分类号： H01L29/10 , H01L29/12 , H01L27/12 , H01L29/786 , H01L29/24 , H01L29/423 , H01L29/45 , H01L27/32 , H01L29/49
摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
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公开(公告)号：US10665453B2
公开(公告)日：2020-05-26
申请号：US16110396
申请日：2018-08-23
IPC分类号： H01L21/02 , H01L29/66 , H01L29/786 , H01L27/12
摘要： An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.
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公开(公告)号：US10418467B2
公开(公告)日：2019-09-17
申请号：US15953795
申请日：2018-04-16
IPC分类号： H01L29/24 , H01L29/66 , H01L27/12 , H01L29/786 , H01L29/423
摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
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公开(公告)号：US10388799B2
公开(公告)日：2019-08-20
申请号：US15444692
申请日：2017-02-28
发明人： Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L21/02 , H01L23/00 , H01L27/12 , H01L29/04 , H01L29/24 , H01L29/51 , H01L29/66 , H01L27/105 , H01L29/423 , H01L29/786 , H01L27/1156
摘要： Stable electric characteristics and high reliability are provided to a miniaturized and integrated semiconductor device including an oxide semiconductor. In a transistor (a semiconductor device) including an oxide semiconductor film, the oxide semiconductor film is provided along a trench (groove) formed in an insulating layer. The trench includes a lower end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the lower end corner portion.
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公开(公告)号：US10211231B2
公开(公告)日：2019-02-19
申请号：US15827318
申请日：2017-11-30
IPC分类号： H01L27/12 , H01L21/02 , H01L29/786 , H01L29/66 , H01L29/24
摘要： An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
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公开(公告)号：US10153360B2
公开(公告)日：2018-12-11
申请号：US15584242
申请日：2017-05-02
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda
IPC分类号： H01L29/66 , H01L29/51 , H01L29/423 , H01L21/477 , H01L21/425 , H01L29/786 , H01L21/02 , H01L21/28
摘要： A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.
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公开(公告)号：US10079295B2
公开(公告)日：2018-09-18
申请号：US14629575
申请日：2015-02-24
IPC分类号： H01L29/66 , H01L27/06 , H01L27/12 , H01L29/786 , H01L29/423 , H01L21/02
摘要： A method for manufacturing an oxide semiconductor layer, comprising forming an oxide semiconductor layer over an insulating layer so as to be along with a curved surface of a projecting structural body of the insulating layer, wherein a length of the projecting structural body in a height direction is larger than a width of the projecting structural body, is provided.
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公开(公告)号：US20180138211A1
公开(公告)日：2018-05-17
申请号：US15726691
申请日：2017-10-06
IPC分类号： H01L27/12 , H01L29/786 , H01L29/51 , H01L29/24 , G02F1/1333 , G02F1/1368 , G02F1/1362 , G02F1/1343 , G02F1/1337
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/136227 , G02F1/136277 , G02F1/1368 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L29/24 , H01L29/517 , H01L29/78609 , H01L29/7869
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
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公开(公告)号：US09960279B2
公开(公告)日：2018-05-01
申请号：US14560259
申请日：2014-12-04
发明人： Toshinari Sasaki , Kosei Noda , Yuhei Sato , Yuta Endo
IPC分类号： H01L29/78 , H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42364
摘要： Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.
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公开(公告)号：US09852906B2
公开(公告)日：2017-12-26
申请号：US14082505
申请日：2013-11-18
IPC分类号： H01L21/336 , H01L29/786 , H01L21/84 , H01L21/02 , H01L29/66 , H01L27/12
CPC分类号： H01L21/02664 , H01L21/02565 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
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