公开(公告)号：US20080044978A1

公开(公告)日：2008-02-21

申请号：US11890940

申请日：2007-08-08

申请人： Richard Williams ,  Donald Disney ,  Wai Chan

发明人： Richard Williams ,  Donald Disney ,  Wai Chan

IPC分类号： H01L21/76

CPC分类号： H01L29/0646 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76237 ,  H01L21/76243 ,  H01L21/76267 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

摘要： A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

公开(公告)号：US20070116648A1

公开(公告)日：2007-05-24

申请号：US11601011

申请日：2006-11-17

申请人： Wing Wong ,  Wai Chan

发明人： Wing Wong ,  Wai Chan

IPC分类号： C07F5/00 ,  A61K49/10

CPC分类号： A61K49/085 ,  A61K49/10 ,  A61K49/106 ,  C07D259/00

摘要： An adamantane functionalized magnetic resonance imaging (MRI) contrast agent has been synthesized, and shows high liver specificity, prolonged retention time in both the liver and kidneys, the highest relaxivity among clinical contrast agents, high water solubility, thermodynamic stability, signal intensity enhancement, hepatocellular uptake, and low osmolality and toxicity.

摘要翻译： 已经合成了金刚烷功能化磁共振成像（MRI）造影剂，显示肝脏特异性高，肝肾保留时间延长，临床造影剂中最高的舒张度，高水溶性，热力学稳定性，信号强度增强， 肝细胞摄取和低渗透压和毒性。

公开(公告)号：US07125750B2

公开(公告)日：2006-10-24

申请号：US10994790

申请日：2004-11-22

申请人： Yiu Fai Kwan ,  Wai Chan

发明人： Yiu Fai Kwan ,  Wai Chan

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2224/48

摘要： A leadframe having a metallic substrate and comprising layers of plated material, and a method of manufacturing said leadframe are provided. The substrate is plated with a layer of oxidizable material comprising nickel and a noble metal is selectively plated on the layer of oxidizable material. Thereafter, an exposed portion of the oxidizable material that is not plated with the noble metal is passivated to enhance adhesion of an encapsulation compound molded to the leadframe.

摘要翻译： 提供了具有金属基底并包括镀层材料层的引线框，以及制造所述引线框架的方法。 该衬底镀有包含镍的可氧化材料层，并且贵金属被选择性地镀在可氧化材料层上。 此后，将未镀有贵金属的可氧化材料的暴露部分钝化，以增强模塑到引线框架的封装化合物的粘合性。

公开(公告)号：US20060077238A1

公开(公告)日：2006-04-13

申请号：US10962750

申请日：2004-10-13

申请人： Darrell Mann ,  Wai Chan

发明人： Darrell Mann ,  Wai Chan

IPC分类号： B41J2/175

CPC分类号： B41J2/175

摘要： An ink container for supplying ink to an inkjet print head includes a reservoir for storing the ink, and the reservoir has an outlet. The container further includes a plurality of non-porous particles placed inside the reservoir at least at two different spacings from adjacent particles for controlling a capillary pressure inside the reservoir.

摘要翻译： 用于将墨水供应到喷墨打印头的墨水容器包括用于存储墨水的储存器，并且储存器具有出口。 容器还包括至少与相邻颗粒的两个不同间隔放置在储存器内部的多个无孔颗粒，用于控制贮存器内的毛细管压力。

公开(公告)号：US20060036345A1

公开(公告)日：2006-02-16

申请号：US11199815

申请日：2005-08-09

申请人： An Cao ,  Wai Chan ,  Jill Card

发明人： An Cao ,  Wai Chan ,  Jill Card

IPC分类号： G06F19/00

CPC分类号： G05B13/027 ,  G05B13/024

摘要： Complex process control and maintenance are performed utilizing a nonlinear regression analysis to determine optimal tool-specific adjustments based on operational metrics, process adjustments and maintenance activities.

摘要翻译： 使用非线性回归分析来执行复杂的过程控制和维护，以基于操作指标，过程调整和维护活动确定最佳的工具特定调整。

公开(公告)号：US20050272230A1

公开(公告)日：2005-12-08

申请号：US11203789

申请日：2005-08-15

申请人： Richard Williams ,  Michael Cornell ,  Wai Chan

发明人： Richard Williams ,  Michael Cornell ,  Wai Chan

IPC分类号： H01L21/331 ,  H01L21/76 ,  H01L21/8222 ,  H01L21/8224 ,  H01L21/8228 ,  H01L21/8234 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/082 ,  H01L27/088 ,  H01L29/73 ,  H01L29/732 ,  H01L21/336 ,  H01L21/04

CPC分类号： H01L27/0826 ,  H01L21/8224 ,  H01L21/82285 ,  H01L27/0821 ,  H01L29/6625 ,  H01L29/66272 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density of the devices can be increased. Also trench constrained doped region diffuse faster and deeper than unconstrained diffusions, thereby reducing the time and temperature needed to complete a desired depth diffusion. The technique may be used for semiconductor devices such as bipolar transistors as well as isolation regions that electrically isolate the devices from each other. In one group of embodiments, a buried layer is formed at an interface between an epitaxial layer and a substrate, at a location generally below the dopant in the mesa. When the substrate is subjected to thermal processing, the buried layer diffuses upward, the dopant in the mesa diffuses downward until the two dopants merge to form an isolation region or a sinker extending downward from the surface of the epitaxial layer to the buried layer. In another embodiment, dopant is implanted between dielectrically filled trenches at a high energy up to several MeV, then diffused, combining the benefits of deep implantation and trenched constrained diffusion to achive deep diffusions with a minimal thermal budget.

公开(公告)号：US20050035398A1

公开(公告)日：2005-02-17

申请号：US10606112

申请日：2003-06-24

申请人： Richard Williams ,  Michael Cornell ,  Wai Chan

发明人： Richard Williams ,  Michael Cornell ,  Wai Chan

IPC分类号： H01L21/336 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L29/7813 ,  H01L21/26513 ,  H01L21/2652 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7808 ,  H01L29/7827

摘要： In a trench-gated MOSFET including an epitaxial layer over a substrate of like conductivity and trenches containing thick bottom oxide, sidewall gate oxide, and conductive gates, body regions of the complementary conductivity are shallower than the gates, and clamp regions are deeper and more heavily doped than the body regions but shallower than the trenches. Zener junctions clamp a drain-source voltage lower than the FPI breakdown of body junctions near the trenches, but the zener junctions, being shallower than the trenches, avoid undue degradation of the maximum drain-source voltage. The epitaxial layer may have a dopant concentration that increases step-wise or continuously with depth. Chained implants of the body and clamp regions permits accurate control of dopant concentrations and of junction depth and position. Alternative fabrication processes permit implantation of the body and clamp regions before gate bus formation or through the gate bus after gate bus formation.

摘要翻译： 在包含类似导电性的衬底上的外延层和包含厚的底部氧化物，侧壁栅极氧化物和导电栅极的沟槽的沟槽栅化MOSFET中，互补导电体的主体区域比栅极浅，并且钳位区域更深并且更多 重度掺杂比身体区域，但比沟槽浅。 齐纳结钳位漏极 - 源极电压低于沟槽附近的主体结的FPI击穿，但是比沟槽更浅的齐纳结避免了最大漏极 - 源极电压的过度劣化。 该外延层可以具有随着深度逐步增加或连续增加的掺杂剂浓度。 身体和夹持区域的链接植入允许准确控制掺杂剂浓度和结深度和位置。 替代的制造工艺允许在栅极总线形成之前植入机体并钳位区域，或者在栅极总线形成之后通过栅极总线。

公开(公告)号：US20050014324A1

公开(公告)日：2005-01-20

申请号：US10918314

申请日：2004-08-14

申请人： Richard Williams ,  Michael Cornell ,  Wai Chan

发明人： Richard Williams ,  Michael Cornell ,  Wai Chan

IPC分类号： H01L21/331 ,  H01L21/329 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/732 ,  H01L29/861 ,  H01L31/062 ,  H01L29/76 ,  H01L31/119 ,  H01L29/94 ,  H01L31/113

CPC分类号： H01L21/26513 ,  H01L21/743 ,  H01L21/761 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0629 ,  H01L27/0928 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66136 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7816 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

摘要： An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.