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公开(公告)号：US20140294838A1
公开(公告)日：2014-10-02
申请号：US14229308
申请日：2014-03-28
Applicant: Mi Young CHO , Powei Lin , Seung Hyun Lee , Kwang Ho Cheong , Young Jun Koh , Christina Yi , Jae Woong Hwang
Inventor： Mi Young CHO , Powei Lin , Seung Hyun Lee , Kwang Ho Cheong , Young Jun Koh , Christina Yi , Jae Woong Hwang
IPC: C07K16/32
CPC classification number: A61K39/39558 , C07K16/2863 , C07K16/32 , C07K2317/24 , C07K2317/31 , C07K2317/34 , C07K2317/565 , C07K2317/622 , C07K2317/64 , C07K2317/92
Abstract: There are provided an anti-c-Met/anti-Her2 bispecific antibody, and a method for preventing and/or treating cancer using the same.
Abstract translation: 提供抗c-Met /抗Her2双特异性抗体，以及使用其的预防和/或治疗癌症的方法。
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62.发明授权Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns 有权单体，聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US08771917B2
公开(公告)日：2014-07-08
申请号：US13341931
申请日：2011-12-31
Applicant: Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
Inventor： Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
CPC classification number: G03F7/0397 , C07D307/93 , C07D317/24 , C08F24/00 , C08F220/28 , G03F7/0382 , G06F7/38 , Y10S430/111
Abstract: Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供含有缩醛部分的（甲基）丙烯酸酯单体，含有由这种单体形成的单元的聚合物和含有这种聚合物的光致抗蚀剂组合物。 单体，聚合物和光致抗蚀剂组合物可用于形成光刻图案。 还提供了涂覆有光致抗蚀剂组合物的基材，形成光刻图案的方法和电子装置。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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63.发明授权公开(公告)号：US08751891B2
公开(公告)日：2014-06-10
申请号：US12857162
申请日：2010-08-16
Applicant: Jae-Hong Park , Seung-Hyun Lee , Jin-Young Oh , Dong-Jun Kang
Inventor： Jae-Hong Park , Seung-Hyun Lee , Jin-Young Oh , Dong-Jun Kang
IPC: G06F11/00
CPC classification number: H04L1/1854 , H04L1/1841 , H04L1/1848
Abstract: An apparatus and a method for operating an Automatic Repeat reQuest (ARQ) in consideration of an operation state of a Hybrid Automatic Repeat reQuest (HARQ) in a wireless communication system. In the method, when an ARQ timer expires, operation state information of a HARQ module for controlling a HARQ is determined. Whether to delay generation of Negative ACKnowledge (NACK) information in consideration of the operation state information of the HARQ module, then determined. When determining to delay the generation of the NACK information, the generation of the NACK information is delayed for a delay time determined in consideration of the operation state information of the HARQ module.
Abstract translation: 考虑到无线通信系统中的混合自动重传请求（HARQ）的操作状态来操作自动重复请求（ARQ）的装置和方法。 在该方法中，当ARQ定时器到期时，确定用于控制HARQ的HARQ模块的操作状态信息。 考虑到HARQ模块的运行状态信息，是否延迟生成负值确认（NACK）信息，然后确定。 当确定延迟生成NACK信息时，NACK信息的生成被延迟考虑到HARQ模块的操作状态信息确定的延迟时间。
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64.发明授权Magnetic tunnel junction and spin transfer torque random access memory having the same 有权磁隧道结和自旋转移转矩随机存取存储器具有相同的功能公开(公告)号：US08730714B2
公开(公告)日：2014-05-20
申请号：US13336102
申请日：2011-12-23
Applicant: Seung Hyun Lee
Inventor： Seung Hyun Lee
IPC: G11C11/00
CPC classification number: G11C11/161 , G11C11/5607 , H01L27/228 , H01L43/08
Abstract: A magneto-resistance memory device includes a first pinned layer having a first magnetic polarity regardless of current applied to the first pinned layer, a first tunnel insulating layer arranged on the first pinned layer, a first free layer arranged on the first tunnel insulating layer and having a magnetic polarity that changes in response to current of a first amount, a second pinned layer coupled to the first free layer and having the first magnetic polarity regardless of current applied to the first pinned layer, a second tunnel insulating layer arranged on the second pinned layer, a second free layer arranged on the second tunnel insulating layer and having a magnetic polarity that changes in response to current of a second amount, wherein the second amount is smaller than the first amount, and a connection layer.
Abstract translation: 磁阻存储器件包括具有第一磁极性的第一被钉扎层，而不管施加到第一被钉扎层的电流如何，布置在第一钉扎层上的第一隧道绝缘层，布置在第一隧道绝缘层上的第一自由层和 具有响应于第一量的电流而变化的磁极性，耦合到第一自由层并且具有第一磁极性的第二被钉扎层，而不管施加到第一被钉扎层的电流如何;第二隧道绝缘层，布置在第二自由层上 所述第二自由层布置在所述第二隧道绝缘层上，并且具有响应于第二量的电流而变化的磁极性，其中所述第二量小于所述第一量，以及连接层。
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65.发明授权Apparatus and method for switching MIMO modes in a wireless communication system 有权用于在无线通信系统中切换MIMO模式的装置和方法公开(公告)号：US08705451B2
公开(公告)日：2014-04-22
申请号：US13263695
申请日：2010-04-05
Applicant: Kuk Jin Song , Seung Hyun Lee , Hyung Joon Jeon , Il Nyun Kim , Kwang Sung Kim
Inventor： Kuk Jin Song , Seung Hyun Lee , Hyung Joon Jeon , Il Nyun Kim , Kwang Sung Kim
IPC: H04W4/00
CPC classification number: H04B7/0871 , H04B7/04 , H04B7/0689 , H04B7/0697 , H04B17/336
Abstract: Disclosed is an apparatus for switching MIMO modes, which can efficiently switch an MIMO mode of a mobile station. The apparatus for switching MIMO modes includes an MIMO mode determining unit, a staying time determining unit, and an MIMO mode switching unit. The MIMO mode determining unit determines a current MIMO mode of a mobile station. The staying time determining unit determines a first staying time in a first MIMO mode of the mobile station when the MIMO mode determining unit determines the current MIMO mode of the mobile station as the first MIMO mode for transmitting the same data through a plurality of antennas, and determines a second staying time in a second MIMO mode of the mobile station when the MIMO mode determining unit determines the current MIMO mode of the mobile station as the second MIMO mode for transmitting different data by antenna. The MIMO mode switching unit switches the MIMO mode of the mobile station to the second MIMO mode when the first staying time is greater than or equal to a first threshold staying time.
Abstract translation: 公开了一种用于切换MIMO模式的装置，其可以有效地切换移动台的MIMO模式。 用于切换MIMO模式的装置包括MIMO模式确定单元，停留时间确定单元和MIMO模式切换单元。 MIMO模式确定单元确定移动台的当前MIMO模式。 停留时间确定单元在MIMO模式确定单元确定移动站的当前MIMO模式作为通过多个天线发送相同数据的第一MIMO模式时，确定移动站的第一MIMO模式中的第一停留时间， 并且当所述MIMO模式确定单元将所述移动站的当前MIMO模式确定为用于通过天线发送不同数据的第二MIMO模式时，确定所述移动站的第二MIMO模式中的第二停留时间。 当第一停留时间大于或等于第一阈值停留时间时，MIMO模式切换单元将移动站的MIMO模式切换到第二MIMO模式。
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Patent Agency Ranking
公开(公告)号：US20130269698A1
公开(公告)日：2013-10-17
申请号：US13994324
申请日：2011-12-16
Applicant: Norbert Hans Balko , Seung Hyun Lee , Peter Douglas Hill , Christopher Wayne McDaniel
Inventor： Norbert Hans Balko , Seung Hyun Lee , Peter Douglas Hill , Christopher Wayne McDaniel
CPC classification number: A61M16/0057 , A61M16/0006 , A61M16/0009 , A61M16/0051 , A61M16/024 , A61M16/0465 , A61M16/0666 , A61M16/0875 , A61M2016/0042 , A61M2205/502
Abstract: A system for controlling machine-induced expiratory airflow of a subject, the subject having an airway, the system comprising: a pressure generator (140) configured to generate a pressurized flow of breathable gas for delivery to the airway of the subject; and one or more processors (110) configured to execute computer program modules, th computer program modules comprising: a control module (170) configured to control the pressure generator a metric determination module (154) configured to determine a value of a flow metric during expiration by the subject, a flow analysis module (156) configured to compare the determined value of the flow metric with a target level of the flow metric; and an adjustment module (160) configured to adjust one or more of exsufflation pressure.
Abstract translation: 一种用于控制受试者的机器呼气气流的系统，所述受试者具有气道，所述系统包括：压力发生器（140），其被配置为产生加压气流，用于输送到所述对象的气道; 以及被配置为执行计算机程序模块的计算机程序模块的一个或多个处理器（110），所述计算机程序模块包括：控制模块（170），被配置为控制压力发生器，度量确定模块（154），其被配置为在 流程分析模块（156），被配置为将所确定的流量度量值与所述流量度量的目标水平进行比较; 以及调整模块（160），其被配置为调节一个或多个排气压力。
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67.发明申请公开(公告)号：US20130039121A1
公开(公告)日：2013-02-14
申请号：US13336102
申请日：2011-12-23
Applicant: Seung Hyun LEE
Inventor： Seung Hyun LEE
CPC classification number: G11C11/161 , G11C11/5607 , H01L27/228 , H01L43/08
Abstract: A magneto-resistance memory device includes a first pinned layer having a first magnetic polarity regardless of current applied to the first pinned layer, a first tunnel insulating layer arranged on the first pinned layer, a first free layer arranged on the first tunnel insulating layer and having a magnetic polarity that changes in response to current of a first amount, a second pinned layer coupled to the first free layer and having the first magnetic polarity regardless of current applied to the first pinned layer, a second tunnel insulating layer arranged on the second pinned layer, a second free layer arranged on the second tunnel insulating layer and having a magnetic polarity that changes in response to current of a second amount, wherein the second amount is smaller than the first amount, and a connection layer.
Abstract translation: 磁阻存储器件包括具有第一磁极性的第一被钉扎层，而不管施加到第一被钉扎层的电流如何，布置在第一钉扎层上的第一隧道绝缘层，布置在第一隧道绝缘层上的第一自由层和 具有响应于第一量的电流而变化的磁极性，耦合到第一自由层并且具有第一磁极性的第二被钉扎层，而不管施加到第一被钉扎层的电流如何;第二隧道绝缘层，布置在第二自由层上 所述第二自由层布置在所述第二隧道绝缘层上，并且具有响应于第二量的电流而变化的磁极性，其中所述第二量小于所述第一量，以及连接层。
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公开(公告)号：US20120299169A1
公开(公告)日：2012-11-29
申请号：US13569600
申请日：2012-08-08
Applicant: Jong Hoon KIM , Min Suk SUH , Seung Taek YANG , Seung Hyun LEE , Tae Min KANG
Inventor： Jong Hoon KIM , Min Suk SUH , Seung Taek YANG , Seung Hyun LEE , Tae Min KANG
IPC: H01L25/07
CPC classification number: H01L25/0652 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3114 , H01L23/5389 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/96 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68345 , H01L2224/12105 , H01L2224/13024 , H01L2224/131 , H01L2224/2105 , H01L2224/221 , H01L2224/97 , H01L2225/06562 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01078 , H01L2924/014 , H01L2924/15311 , H01L2924/15788 , H01L2924/18161 , H01L2224/19 , H01L2924/00
Abstract: A stacked wafer level package includes a first semiconductor chip having a first bonding pad and a second semiconductor chip having a second bonding pad. Both bonding pads of the semiconductor chips face the same direction. The second semiconductor chip is disposed in parallel to the first semiconductor chip. A third semiconductor chip is disposed over the first and second semiconductor chips acting as a supporting substrate. The third semiconductor chip has a third bonding pad that is exposed between the first and the second semiconductor chips upon attachment. Finally, a redistribution structure is electrically connected to the first, second, and third bonding pads.
Abstract translation: 堆叠的晶片级封装包括具有第一焊盘的第一半导体芯片和具有第二焊盘的第二半导体芯片。 半导体芯片的两个接合焊盘面向相同的方向。 第二半导体芯片与第一半导体芯片平行设置。 第三半导体芯片设置在用作支撑衬底的第一和第二半导体芯片上。 第三半导体芯片具有在附接时在第一和第二半导体芯片之间露出的第三焊盘。 最后，再分布结构电连接到第一，第二和第三键合焊盘。
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69.发明申请公开(公告)号：US20120219902A1
公开(公告)日：2012-08-30
申请号：US13407529
申请日：2012-02-28
Applicant: Young Cheol Bae , Jong Keun Park , Seung-Hyun Lee , Yi Liu , Thomas Cardolaccia , Rosemary Bell
Inventor： Young Cheol Bae , Jong Keun Park , Seung-Hyun Lee , Yi Liu , Thomas Cardolaccia , Rosemary Bell
CPC classification number: G03F7/2041 , G03F7/0397 , G03F7/091 , G03F7/11 , G03F7/325
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了可用于形成光刻图案的光致抗蚀剂组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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公开(公告)号：US20120219901A1
公开(公告)日：2012-08-30
申请号：US13407508
申请日：2012-02-28
Applicant: Young Cheol BAE , Rosemary BELL , Thomas CARDOLACCIA , Seung-Hyun LEE , Yi LIU , Jong Keun PARK
Inventor： Young Cheol BAE , Rosemary BELL , Thomas CARDOLACCIA , Seung-Hyun LEE , Yi LIU , Jong Keun PARK
CPC classification number: G03F7/0397 , G03F7/091 , G03F7/2041 , G03F7/325
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
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