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51.发明授权公开(公告)号：US09448471B2
公开(公告)日：2016-09-20
申请号：US14335949
申请日：2014-07-21
发明人： En-Chiuan Liou , Yu-Cheng Tung , Teng-Chin Kuo , Yuan-Chi Pai , Chun-Chi Yu
IPC分类号： G03F1/38 , G03F7/20 , H01L21/027
CPC分类号： G03F1/38 , G03F7/20 , H01L21/0274
摘要： The present invention provides a photo-mask for manufacturing structures on a semiconductor substrate, which comprises a photo-mask substrate, a first pattern, a second pattern and a forbidden pattern. A first active region, a second active region are defined on the photo-mask substrate, and a region other than the first active region and the second active region are defined as a forbidden region. The first pattern is disposed in the first active region and corresponds to a first structure on the semiconductor substrate. The second pattern is disposed in the second active region and corresponds to a second structure on the semiconductor substrate. The forbidden pattern is disposed in the forbidden region, wherein the forbidden pattern has a dimension beyond resolution capability of photolithography and is not used to form any corresponding structure on the semiconductor substrate. The present invention further provides a method of manufacturing semiconductor structures.
摘要翻译： 本发明提供一种用于在半导体衬底上制造结构的光掩模，其包括光掩模衬底，第一图案，第二图案和禁止图案。 第一有源区，第二有源区被限定在光掩模基板上，除了第一有源区和第二有源区之外的区域被定义为禁止区。 第一图案设置在第一有源区中并对应于半导体衬底上的第一结构。 第二图案设置在第二有源区域中，并且对应于半导体衬底上的第二结构。 禁止图案设置在禁止区域中，其中禁止图案具有超过光刻分辨能力的尺寸，并且不用于在半导体基板上形成任何相应的结构。 本发明还提供一种制造半导体结构的方法。
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52.发明授权公开(公告)号：US09448468B2
公开(公告)日：2016-09-20
申请号：US14227705
申请日：2014-03-27
摘要： A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.
摘要翻译： 反射型掩模坯料，反射型掩模，以及抑制遮光框的反射率的制造方法。 反射掩模包括基板，形成在基板上的多层反射层，形成在多层反射层上的吸收层和吸收层的膜厚大于膜厚的框状遮光框区域 在其他地区。 多层反射层通过熔化在遮光框架区域扩散混合。
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公开(公告)号：US09442366B2
公开(公告)日：2016-09-13
申请号：US14588013
申请日：2014-12-31
发明人： Chiung-Jung Tu , Chih-Hao Huang
摘要： A layout pattern and a photomask including the layout pattern are provided. The layout pattern includes a plurality of main patterns and at least one auxiliary pattern. The main patterns are arranged in parallel to one another and extend in a first direction. The at least one auxiliary pattern is located between two outermost main patterns and connects the two outermost main patterns. The at least one auxiliary pattern is arranged in a second direction. The second direction is different from the first direction.
摘要翻译： 提供布局图案和包括布局图案的光掩模。 布局图案包括多个主图案和至少一个辅助图案。 主图案彼此平行布置并沿第一方向延伸。 至少一个辅助图案位于两个最外面的主图案之间并且连接两个最外面的主图案。 所述至少一个辅助图案被布置在第二方向上。 第二个方向与第一个方向不同。
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54.发明授权公开(公告)号：US09442365B2
公开(公告)日：2016-09-13
申请号：US14209780
申请日：2014-03-13
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate and a patterned absorption layer disposed over the reflective multilayer. The patterned absorption layer has a mask image region and a mask border region. The exemplary mask also includes a mask border frame disposed over the mask border region. The mask border frame has a top surface and a bottom surface. The top surface is not parallel to the bottom surface.
摘要翻译： 公开了一种掩模及其制造方法。 在一个示例中，掩模包括衬底，设置在衬底上的反射多层涂层和设置在反射多层上的图案化吸收层。 图案化吸收层具有掩模图像区域和掩模边界区域。 示例性掩模还包括设置在掩模边界区域上方的掩模边框。 面罩边框具有顶面和底面。 顶面不平行于底面。
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55.发明授权Exposure mask, exposure apparatus, and method for manufacturing display substrate 有权曝光掩模，曝光装置和显示基板的制造方法公开(公告)号：US09429836B2
公开(公告)日：2016-08-30
申请号：US14445624
申请日：2014-07-29
摘要： The present invention discloses an exposure mask, an exposure apparatus, and a method for manufacturing a display substrate, which are used for forming a pattern with a smaller aperture, a narrower slit, or a line of smaller width on a photoresist layer. The exposure mask includes a mask body and an anti-diffraction film layer located at a light emergent side of the mask body. Wherein the mask body includes a light transmissive region and a light non-transmissive region; a region of the anti-diffraction film layer which corresponds to at least the light transmissive region of the mask body is a light transmissive region; and the anti-diffraction film layer is a film layer whose refractive index n satisfies n>1.
摘要翻译： 本发明公开了一种用于在光致抗蚀剂层上形成具有较小孔径，较窄狭缝或较小宽度的线的图案的曝光掩模，曝光装置和制造显示基板的方法。 曝光掩模包括掩模体和位于掩模体的光出射侧的抗衍射膜层。 其中，所述面罩主体包括透光区域和光非透射区域; 至少对应于掩模体的透光区域的反衍射膜层的区域是透光区域; 抗衍射膜层是折射率n满足n> 1的膜层。
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公开(公告)号：US20160246166A1
公开(公告)日：2016-08-25
申请号：US14742394
申请日：2015-06-17
申请人： SK Hynix Inc.
发明人： Byung Ho NAM
IPC分类号： G03F1/26
摘要： A photomask includes a light transmission substrate having a transfer region and a frame region, a light-transmitting region exposing a portion of the light transmission substrate in the transfer region corresponding to a transfer pattern, and a light-blocking region disposed in the transfer region and surrounding the light-transmitting region, wherein the light-blocking region includes a first light-blocking region surrounding the light-transmitting region, and a second light-blocking region that surrounds the first light-blocking region, and wherein a first light-blocking pattern is disposed on the light transmission substrate in the first light-blocking region, and a plurality of second light-blocking patterns are disposed on the light transmission substrate in the second light-blocking region.
摘要翻译： 光掩模包括具有转印区域和框架区域的透光基板，在与转印图案对应的转印区域中曝光透光基板的一部分的透光区域和设置在转印区域中的遮光区域 并且围绕所述透光区域，其中所述遮光区域包括围绕所述透光区域的第一遮光区域和围绕所述第一遮光区域的第二遮光区域，并且其中， 在第一遮光区域的透光性基板上配置阻挡图案，在第二遮光区域的透光性基板上设置多个第二遮光图案。
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57.发明授权Lithography method and structure for resolution enhancement with a two-state mask 有权使用双态掩模的光刻方法和分辨率增强结构公开(公告)号：US09417534B2
公开(公告)日：2016-08-16
申请号：US14298589
申请日：2014-06-06
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
CPC分类号： G03F7/70191 , G03F1/24 , G03F1/32 , G03F1/38 , G03F1/50 , G03F1/58 , G03F7/20 , G03F7/70091 , G03F7/70941
摘要： A lithography process in a lithography system includes loading a mask that includes two mask states defining an integrated circuit (IC) pattern. The IC pattern includes a plurality of main polygons, wherein adjacent main polygons are assigned to different mask states; and a background includes a field in one of the mask states and a plurality of sub-resolution polygons in another of the two mask states. The lithography process further includes configuring an illuminator to generate an illuminating pattern on an illumination pupil plane of the lithography system; configuring a pupil filter on a projection pupil plane of the lithography system with a filtering pattern determined according to the illumination pattern; and performing an exposure process to a target with the illuminator, the mask, and the pupil filter. The exposure process produces diffracted light and non-diffracted light behind the mask and the pupil filter removes most of the non-diffracted light.
摘要翻译： 光刻系统中的光刻工艺包括加载包含限定集成电路（IC）图案的两个掩模状态的掩模。 IC图案包括多个主多边形，其中相邻的主多边形被分配到不同的掩模状态; 并且背景包括掩模状态之一的场和在两个掩模状态中的另一掩码状态中的多个子分辨率多边形。 光刻工艺还包括配置照明器以在光刻系统的照明光瞳平面上产生照明图案; 在光刻系统的投影光瞳平面上用根据照明图案确定的滤光图案配置光瞳滤光器; 并且利用照明器，掩模和瞳孔滤光器对目标进行曝光处理。 曝光过程在掩模后面产生衍射光和非衍射光，瞳孔滤光器去除大部分非衍射光。
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公开(公告)号：US20160187768A1
公开(公告)日：2016-06-30
申请号：US14588013
申请日：2014-12-31
发明人： Chiung-Jung Tu , Chih-Hao Huang
IPC分类号： G03F1/42
摘要： A layout pattern and a photomask including the layout pattern are provided. The layout pattern includes a plurality of main patterns and at least one auxiliary pattern. The main patterns are arranged in parallel to one another and extend in a first direction. The at least one auxiliary pattern is located between two outermost main patterns and connects the two outermost main patterns. The at least one auxiliary pattern is arranged in a second direction. The second direction is different from the first direction.
摘要翻译： 提供布局图案和包括布局图案的光掩模。 布局图案包括多个主图案和至少一个辅助图案。 主图案彼此平行布置并沿第一方向延伸。 至少一个辅助图案位于两个最外面的主图案之间并且连接两个最外面的主图案。 所述至少一个辅助图案被布置在第二方向上。 第二个方向与第一个方向不同。
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59.发明授权Determining position and curvature information directly from a surface of a patterning device 有权从图案形成装置的表面直接确定位置和曲率信息公开(公告)号：US09377700B2
公开(公告)日：2016-06-28
申请号：US14357514
申请日：2013-05-31
发明人： Mark Josef Schuster , Santiago E. Del Puerto , Daniel Nathan Burbank , Duncan Walter Bromley , Franciscus Godefridus Casper Bijnen
CPC分类号： G03F7/70775 , G03F1/14 , G03F1/142 , G03F1/38 , G03F7/707 , G03F7/70708 , G03F7/70783 , G03F7/7085
摘要： Position and curvature information of a patterning device may be determined directly from the patterning device and controlled based on the determined information. In an embodiment, a lithographic apparatus includes a position determining system operative to determine a relative position of the patterning device. The patterning device may be configured to create a patterned radiation beam from a radiation beam incident on a major surface of the patterning device. The patterning device may have a side surface having an edge in common with the major surface. The position determining system may include an interferometer operative to transmit light to the side surface and to receive the transmitted light after the transmitted light has been reflected at the side surface. The position determining system is operative to determine a quantity representative of the relative position of the patterning device from the received reflected transmitted light.
摘要翻译： 图案形成装置的位置和曲率信息可以直接从图案形成装置确定并基于所确定的信息进行控制。 在一个实施例中，光刻设备包括位置确定系统，其可操作以确定图案形成装置的相对位置。 图案形成装置可以被配置为从入射在图案形成装置的主表面上的辐射束产生图案化的辐射束。 图案形成装置可以具有与主表面共同的边缘的侧表面。 位置确定系统可以包括干涉仪，其操作以将光透射到侧表面，并且在透射光已经在侧表面被反射之后接收透射光。 位置确定系统用于确定代表图案形成装置相对于所接收的反射透射光的相对位置的量。
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公开(公告)号：US20160161843A1
公开(公告)日：2016-06-09
申请号：US14591834
申请日：2015-01-07
申请人： BROADCOM CORPORATION
发明人： Tammy DongLei ZHENG
IPC分类号： G03F1/42 , H01L21/768
CPC分类号： G03F1/42 , G03F1/36 , G03F1/38 , G03F1/70 , H01L21/027 , H01L21/32139
摘要： A method for reducing pattern density effects in semiconductor fabrication includes forming a first mask that includes one or more arrays of uniformly distributed pattern. Each array of the uniformly distributed pattern includes similar pattern elements having similar dimensions, orientations, and distances. Using the first mask allows forming a layer of semiconductor devices based on the first mask with reduced pattern density effects. A second mask is formed for the layer based on the first mask. The second mask includes undesired portions, for which the pattern is not uniform. Using the second mask allows removing the undesired portions of the formed layer of the semiconductor devices to create desired structures on the formed layer without a need for using optical proximity correction (OPC).
摘要翻译： 减少半导体制造中的图案密度效应的方法包括形成包括均匀分布图案的一个或多个阵列的第一掩模。 均匀分布图案的每个阵列包括具有相似尺寸，取向和距离的相似图案元件。 使用第一掩模允许基于具有降低的图案密度效应的第一掩模形成半导体器件层。 基于第一掩模为该层形成第二掩模。 第二掩模包括不期望的部分，其图案不均匀。 使用第二掩模允许去除半导体器件的形成层的不希望的部分以在所形成的层上产生期望的结构，而不需要使用光学邻近校正（OPC）。
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