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    Method of reducing particle contamination for ion implanters
    51.
    发明授权
    Method of reducing particle contamination for ion implanters 有权
    降低离子注入机颗粒污染的方法

    公开(公告)号：US07566887B2

    公开(公告)日：2009-07-28

    申请号：US11648979

    申请日：2007-01-03

    Applicant: Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

    Inventor： Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

    IPC: G21K5/00

    CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

    Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

    Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

    DOUBLE PLASMA ION SOURCE
    52.
    发明申请
    DOUBLE PLASMA ION SOURCE 有权
    双等离子源

    公开(公告)号：US20090114841A1

    公开(公告)日：2009-05-07

    申请号：US12183961

    申请日：2008-07-31

    Applicant: William F. DiVergilio

    Inventor： William F. DiVergilio

    IPC: H01J27/02

    CPC classification number: H01J27/16 ,  H01J27/08 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/31701

    Abstract: An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.

    Abstract translation: 离子源包括包括等离子体产生部件的第一等离子体室和用于接收第一气体的第一气体入口，使得所述等离子体产生部件和所述第一气体相互作用以在所述第一等离子体室内产生第一等离子体，其中所述第一等离子体室 进一步限定用于从所述第一等离子体提取电子的孔，以及包括用于接收第二气体的第二气体入口的第二等离子体室，其中所述第二等离子体室还限定与所述第一等离子体室的孔基本对准的孔，用于 接收从其提取的电子，使得电子和第二气体相互作用以在所述第二等离子体室内产生第二等离子体，所述第二等离子体室还限定用于从所述第二等离子体提取离子的提取孔。

    Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
    53.
    发明授权
    Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases 有权
    通过引入气体减少离子注入过程中的污染和改变表面特性的系统和方法

    公开(公告)号：US07511287B2

    公开(公告)日：2009-03-31

    申请号：US11273039

    申请日：2005-11-14

    Applicant: Ronald N. Reece ,  Serguei I. Kondratenko ,  Geumjoo Ra ,  Louis P. Wainwright ,  Gary N. Cai

    Inventor： Ronald N. Reece ,  Serguei I. Kondratenko ,  Geumjoo Ra ,  Louis P. Wainwright ,  Gary N. Cai

    IPC: H01J37/36

    CPC classification number: H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/31705 ,  H01L21/26513

    Abstract: A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.

    Abstract translation: 用于离子注入工艺的污染减轻或表面改性系统包括气源，控制器，阀和处理室。 气体源提供气体（无论是大气还是反应性）到阀门的输送，并由控制器控制。 阀位于处理室上或周围，并可控制地调节气体和/或组成气体到处理室。 处理室保持诸如目标晶片的目标装置，并且允许气体与离子束的相互作用以减轻目标晶片的污染和/或修改处理环境或目标装置的现有属性以改变物理或 化学状态或其特性。 控制器根据存在于离子束内的污染物或其缺乏以及全部或分压分析来选择和调整气体和流速的组成。

    Apparatus for heating a substrate in a variable temperature process using a fixed temperature chuck
    54.
    发明授权
    Apparatus for heating a substrate in a variable temperature process using a fixed temperature chuck 失效
    用于使用固定温度卡盘在可变温度工艺中加热衬底的装置

    公开(公告)号：US07485190B2

    公开(公告)日：2009-02-03

    申请号：US11059202

    申请日：2005-02-15

    Applicant: Gerald Cox

    Inventor： Gerald Cox

    IPC: C23C16/00

    CPC classification number: H01L21/67109 ,  G03F7/427 ,  H01L21/67103

    Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

    Abstract translation: 提供了一种用于使用加热的卡盘加热处理室中的基板的方法。 根据该方法，将基板下降到卡盘上并加热到低于卡盘温度的第一温度。 然后将衬底从卡盘上升开，并且在衬底被支撑在卡盘上方的情况下在衬底上进行处理。 然后将衬底降回到卡盘并加热到大于第一温度的第二温度，以进一步处理衬底。

    Simplified wafer alignment
    55.
    发明授权
    Simplified wafer alignment 有权
    简化晶片对准

    公开(公告)号：US07453160B2

    公开(公告)日：2008-11-18

    申请号：US10830734

    申请日：2004-04-23

    Applicant: Andrew M. Ray

    Inventor： Andrew M. Ray

    IPC: H01L23/544

    CPC classification number: H01L21/67259 ,  Y10S414/135

    Abstract: The present invention is directed to aligning wafers within semiconductor fabrication tools. More particularly, one or more aspects of the present invention pertain to quickly and efficiently finding an alignment marking, such as an alignment notch, on a wafer to allow the wafer to be appropriately oriented within an alignment tool. Unlike conventional systems, the notch is located without firmly holding and spinning or rotating the wafer. Exposure to considerable backside contaminants is thereby mitigated and the complexity and/or cost associated with aligning the wafer is thereby reduced.

    Abstract translation: 本发明涉及在半导体制造工具内对准晶片。 更具体地，本发明的一个或多个方面涉及在晶片上快速有效地找到对准标记，例如对准凹口，以允许晶片在对准工具内被适当地取向。 不同于传统的系统，凹槽位于没有牢固地保持和旋转或旋转晶片的位置。 从而减轻了相当大的背面污染物的暴露，从而降低了与对准晶片相关的复杂性和/或成本。

    Ion source
    56.
    发明授权
    Ion source 有权
    离子源

    公开(公告)号：US07435971B2

    公开(公告)日：2008-10-14

    申请号：US11437547

    申请日：2006-05-19

    Applicant: Bo H. Vanderberg ,  Victor M. Beneviste ,  John F. Fallon ,  Ilya Pokidov

    Inventor： Bo H. Vanderberg ,  Victor M. Beneviste ,  John F. Fallon ,  Ilya Pokidov

    IPC: H01J37/08 ,  H01J7/24 ,  H01J27/20

    CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/304 ,  H01J37/32467 ,  H01J2237/002 ,  H01J2237/082 ,  H01J2237/31701

    Abstract: An exemplary ion source for creating a stream of ions has an aluminum alloy arc chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A temperature sensor monitors temperatures within the arc chamber and provides a signal related to sensed temperature. A controller monitors sensed temperature as measured by the sensor and adjusts the temperature to maintain the sensed temperature within a range.

    Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的铝合金电弧室体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 温度传感器监测电弧室内的温度，并提供与感测温度相关的信号。 控制器监测由传感器测量的感测温度，并调节温度以将感测到的温度保持在一定范围内。

    Ion implanter with contaminant collecting surface
    59.
    发明授权
    Ion implanter with contaminant collecting surface 有权
    离子注入机与污染物收集表面

    公开(公告)号：US07358508B2

    公开(公告)日：2008-04-15

    申请号：US11272529

    申请日：2005-11-10

    Applicant: Philip J. Ring ,  Michael Graf

    Inventor： Philip J. Ring ,  Michael Graf

    IPC: G21K5/00

    CPC classification number: H01J37/3171 ,  H01J2237/028 ,  H01J2237/31705

    Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. A liner has an interior facing surface that bounds at least a portion of the evacuated interior region and that comprises grooves spaced across the surface of the liner to capture contaminants generated within the interior region during operation of the ion implanter.

    Abstract translation: 离子注入机包括用于产生沿着束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以便通过所述工件的表面离子注入 离子束。 衬里具有内表面，其限定了所抽真空的内部区域的至少一部分，并且包括在衬垫的表面上间隔的凹槽，以在离子注入机的操作期间捕获在内部区域内产生的污染物。

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