公开(公告)号：US06828572B2

公开(公告)日：2004-12-07

申请号：US10404493

申请日：2003-04-01

申请人： Ronald N. Reece ,  Michael A. Graf ,  Thomas Parrill ,  Brian S. Freer

发明人： Ronald N. Reece ,  Michael A. Graf ,  Thomas Parrill ,  Brian S. Freer

IPC分类号： G01N2100

CPC分类号： H01J37/3045 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/30455

摘要： The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.

摘要翻译： 本发明通过在离子注入过程中通过入射离子束角度检测器监测和校正角误差来促进半导体器件制造。 此外，本发明通过相对于入射离子束校准处理盘而不在离子注入工艺之前在晶片上测量植入结果来促进半导体器件的制造。

公开(公告)号：US07511287B2

公开(公告)日：2009-03-31

申请号：US11273039

申请日：2005-11-14

申请人： Ronald N. Reece ,  Serguei I. Kondratenko ,  Geumjoo Ra ,  Louis P. Wainwright ,  Gary N. Cai

发明人： Ronald N. Reece ,  Serguei I. Kondratenko ,  Geumjoo Ra ,  Louis P. Wainwright ,  Gary N. Cai

IPC分类号： H01J37/36

CPC分类号： H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/31705 ,  H01L21/26513

摘要： A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.

摘要翻译： 用于离子注入工艺的污染减轻或表面改性系统包括气源，控制器，阀和处理室。 气体源提供气体（无论是大气还是反应性）到阀门的输送，并由控制器控制。 阀位于处理室上或周围，并可控制地调节气体和/或组成气体到处理室。 处理室保持诸如目标晶片的目标装置，并且允许气体与离子束的相互作用以减轻目标晶片的污染和/或修改处理环境或目标装置的现有属性以改变物理或 化学状态或其特性。 控制器根据存在于离子束内的污染物或其缺乏以及全部或分压分析来选择和调整气体和流速的组成。