公开(公告)号：US10002969B2

公开(公告)日：2018-06-19

申请号：US15407839

申请日：2017-01-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： I-Sheng Chen ,  Chih Chieh Yeh ,  Cheng-Hsien Wu

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/24 ,  H01L29/267 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

CPC分类号： H01L29/78618 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/82385 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7853 ,  H01L29/78696

摘要： A semiconductor device includes channel layers disposed over a substrate, a source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the channel layers, and a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers. Each of the channel layers includes a semiconductor wire made of a first semiconductor material. The semiconductor wire extends into the source/drain region. The semiconductor wire in the source/drain regions is wrapped around by a second semiconductor material.