-
公开(公告)号：US20170284933A1
公开(公告)日：2017-10-05
申请号：US15472198
申请日：2017-03-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Alexander Dobrinsky
IPC: G01N21/33
CPC classification number: G01N21/33
Abstract: An integrated ultraviolet analyzer is described. The integrated ultraviolet analyzer can include one or more ultraviolet analyzer cells, each of which includes one or more ultraviolet photodetectors and one or more solid state light sources, which are monolithically integrated. The solid state light source can be operated to emit ultraviolet light, at least some of which passes through an analyzer active gap and irradiates a light sensing surface of the ultraviolet photodetector. A medium to be evaluated can be present in the analyzer active gap and affect the ultraviolet light as it passes there through, thereby altering an effect of the ultraviolet light on a ultraviolet photodetector.
-
公开(公告)号：US09768357B2
公开(公告)日：2017-09-19
申请号：US15042433
申请日：2016-02-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Remigijus Gaska , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Michael Shur , Grigory Simin
CPC classification number: H01L33/405 , H01L24/05 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38 , H01L2224/0401 , H01L2224/06102 , H01L2224/1134 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2924/00
Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
-
公开(公告)号：US20170079102A1
公开(公告)日：2017-03-16
申请号：US15263731
申请日：2016-09-13
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur
CPC classification number: H01S5/062 , H01L33/0004 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/38 , H01S5/0421 , H01S5/0427 , H01S5/0602 , H01S5/06203 , H01S5/34333
Abstract: A solid-state light source (SSLS) with light modulation control is described. A SSLS device can include a main p-n junction region configured for recombination of electron-hole pairs for light emission. A supplementary p-n junction region is proximate the main p-n junction region to supplement the recombination of electron-hole pairs, wherein the supplementary p-n junction region has a smaller electron-hole life time than the electron-hole life time of the main p-n junction region. The main p-n junction region and the supplementary p-n junction region operate cooperatively in a light emission state and a light turn-off-state. In one embodiment, the recombination of electron-hole pairs occurs in the main p-n junction region during a light emission state, and the recombination of electron-hole pairs occurs in the supplementary p-n junction region light during the light turn off-state.
Abstract translation: 描述了具有光调制控制的固态光源（SSLS）。 SSLS器件可以包括配置用于光发射的电子 - 空穴对复合的主p-n结区域。 辅助p-n结区域靠近主p-n结区域以补充电子 - 空穴对的复合，其中补充p-n结区域比主p-n结区域的电子 - 空穴寿命具有更小的电子 - 空穴寿命。 主p-n结区域和辅助p-n结区域在发光状态和光关闭状态下协同工作。 在一个实施例中，在发光状态期间，在主p-n结区域中发生电子 - 空穴对的复合，并且在光关闭状态期间，在辅助p-n结区域光中发生电子 - 空穴对的复合。
-
公开(公告)号：US20170077278A1
公开(公告)日：2017-03-16
申请号：US15263701
申请日：2016-09-13
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Alexander Dobrinsky
IPC: H01L29/778 , H01L29/66 , H01L29/20
CPC classification number: H01L29/7786 , H01L29/0657 , H01L29/1037 , H01L29/1045 , H01L29/2003 , H01L29/201 , H01L29/41758 , H01L29/42316
Abstract: A semiconductor device including a device channel with a gate-drain region having a carrier concentration that varies laterally along a direction from the gate contact to the drain contact is provided. Lateral variation of the carrier concentration can be implemented by laterally varying one or more attributes of one or more layers located in the gate-drain region of the device.
Abstract translation: 提供一种半导体器件，其包括具有栅极 - 漏极区域的器件沟道，栅极 - 漏极区域具有沿着从栅极接触到漏极接触的方向横向变化的载流子浓度。 载流子浓度的横向变化可以通过横向改变位于器件的栅极 - 漏极区域中的一个或多个层的一个或多个属性来实现。
-
公开(公告)号：US20170077085A1
公开(公告)日：2017-03-16
申请号：US15263716
申请日：2016-09-13
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur
CPC classification number: H01L27/0266 , H01L23/62 , H01L25/167 , H01L27/0248
Abstract: A solid-state light source (SSLS) with an integrated short-circuit protection approach is described. A device can include a SSLS having an n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A field-effect transistor (FET) can be monolithically connected in series with the SSLS. The FET can have a saturation current that is greater than the normal operating current of the SSLS and less than a predetermined protection current threshold specified to protect the SSLS and the FET.
Abstract translation: 描述了具有集成短路保护方法的固态光源（SSLS）。 器件可以包括具有n型半导体层的SSLS，p型半导体层和在其间形成的发光结构。 场效应晶体管（FET）可以与SSLS串联单片连接。 FET可以具有大于SSLS的正常工作电流的饱和电流，并且小于为保护SSLS和FET而规定的预定保护电流阈值。
-
Patent Agency Ranking
公开(公告)号：US09467105B2
公开(公告)日：2016-10-11
申请号：US14225761
申请日：2014-03-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Mikhail Gaevski , Michael Shur , Remigijus Gaska
CPC classification number: H03F3/2171 , H01L29/0603 , H01L29/0649 , H01L29/1029 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/66462 , H01L29/7787 , H03F3/2176
Abstract: A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the semiconductor structure below the gate contact. Furthermore, a perforation in the plurality of perforations can extend into the semiconductor structure beyond a location of the semiconductor channel.
Abstract translation: 提供了包括到半导体通道的多个穿孔的装置。 该器件包括形成半导体沟道的半导体结构。 此外，器件包括源极接触，漏极接触和到半导体通道的栅极接触。 多个穿孔可以位于门接触下方的半导体结构中。 此外，多个穿孔中的穿孔可以延伸到半导体结构中超过半导体通道的位置。
-
公开(公告)号：US20160035871A1
公开(公告)日：2016-02-04
申请号：US14885129
申请日：2015-10-16
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Mikhail Gaevski , Michael Shur , Remigijus Gaska
IPC: H01L29/78 , H01L29/66 , H01L29/861
CPC classification number: H01L29/78 , H01L23/367 , H01L29/0623 , H01L29/1087 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/41758 , H01L29/41766 , H01L29/42316 , H01L29/6609 , H01L29/66446 , H01L29/66477 , H01L29/7786 , H01L29/7831 , H01L29/7838 , H01L29/861 , H01L29/8613 , H01L29/872 , H01L29/93 , H01L2924/0002 , H01L2924/00
Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
Abstract translation: 提供了一种横向半导体器件和/或设计，其包括空间电荷产生层和位于器件沟道相对侧上的一组电极，作为与器件通道的接触。 空间电荷产生层被配置为响应于施加到器件通道的触点的工作电压而形成空间电荷区域以至少部分地耗尽器件沟道。
-
公开(公告)号：US20150179751A1
公开(公告)日：2015-06-25
申请号：US14636546
申请日：2015-03-03
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Grigory Simin , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L29/45 , H01L33/36 , H01L33/32 , H01L29/20 , H01L21/283 , H01L21/324 , H01L29/40 , H01L33/00 , H01L29/778
CPC classification number: H01L29/452 , H01L21/28575 , H01L21/28587 , H01L21/28593 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/7787 , H01L33/382 , H01L2933/0016
Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
Abstract translation: 提供了与半导体结构中的半导体层的穿孔欧姆接触。 穿孔欧姆接触可以包括一组穿孔元件，其可以包括横向渗透半导体层的一组金属突起。 穿孔元件可以通过基于半导体层的薄层电阻选择的特征长度刻度和接触半导体层的穿孔欧姆接触金属的每单位长度的接触电阻彼此分离。 该结构可以使用一组条件进行退火，所述条件被配置成确保形成该组金属突起。
-
59.发明申请公开(公告)号：US20150054570A1
公开(公告)日：2015-02-26
申请号：US14527203
申请日：2014-10-29
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Remigijus Gaska
CPC classification number: G05F3/02 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/42316 , H01L29/4232 , H01L29/7786 , H01L29/872
Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.
Abstract translation: 提供了包括具有一组空间电荷控制电极的半导体器件的电路。 该组空间电荷控制电极位于该器件的第一端子（例如栅极或阴极）和第二端子（例如漏极或阳极）之间。 电路包括偏置网络，其向每组空间电荷控制电极中的每一个提供单独的偏置电压。 每个空间电荷控制电极的偏置电压可以是：基于每个端子的偏置电压和空间电荷控制电极相对于端子的位置来选择和/或被配置为消耗通道下方的区域 对应的空间电荷控制电极施加到第二端子的工作电压。
-
公开(公告)号：US20130320352A1
公开(公告)日：2013-12-05
申请号：US13909621
申请日：2013-06-04
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Grigory Simin , Maxim S Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L21/768 , H01L29/20
CPC classification number: H01L21/768 , H01L21/28575 , H01L21/28587 , H01L21/28593 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/452 , H01L33/38 , H01L2933/0016
Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
-
-
-
-
-
-
-
-
-
Search Results
89
records
(took 0.025 seconds)
