公开(公告)号：US12137610B2

公开(公告)日：2024-11-05

申请号：US16953991

申请日：2020-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyesung Choi ,  Ohkyu Kwon ,  Hwang Suk Kim ,  Kwang Hee Lee ,  Dong-Seok Leem

IPC: H10K85/60 ,  C07D519/00 ,  H10K30/40

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar, Ar1, Ar2, Ar3, Ar4, X1, X2, L1, L2, R1, and R2 are the same as defined in the detailed description.

公开(公告)号：US11683599B2

公开(公告)日：2023-06-20

申请号：US17227676

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Kwang Hee Lee ,  Kyung Bae Park ,  Sung Young Yun ,  Dong-Seok Leem ,  Yong Wan Jin

IPC: H04N25/79 ,  H04N25/17 ,  H04N5/32 ,  H01L27/146

CPC classification number: H04N25/17 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H04N5/32

Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

公开(公告)号：US11532671B2

公开(公告)日：2022-12-20

申请号：US15471289

申请日：2017-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Kwang Hee Lee ,  Tadao Yagi ,  Sung Young Yun ,  Gae Hwang Lee ,  Seon-Jeong Lim ,  Yong Wan Jin

IPC: H01L47/00 ,  H01L27/30 ,  H01L51/42 ,  H01L51/00 ,  H01L51/44

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

公开(公告)号：US11011583B2

公开(公告)日：2021-05-18

申请号：US16167655

申请日：2018-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Dong-Seok Leem ,  Kwang Hee Lee ,  Sung Young Yun ,  Yong Wan Jin

IPC: H01L27/14 ,  H01L27/30 ,  H01L27/146 ,  G02B5/20 ,  H01L51/44 ,  H01L51/00

Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

公开(公告)号：US11004909B2

公开(公告)日：2021-05-11

申请号：US16536879

申请日：2019-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Hee Lee ,  Takkyun Ro ,  Dong-Seok Leem ,  Ohkyu Kwon ,  Bum Woo Park ,  Hyesung Choi

IPC: H01L27/32 ,  H01L27/28

Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

公开(公告)号：US10786186B2

公开(公告)日：2020-09-29

申请号：US15637628

申请日：2017-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Joon Heo ,  Kyung Bae Park ,  Takkyun Ro ,  Kwang Hee Lee ,  Dongseon Lee ,  Yong Wan Jin ,  Moon Gyu Han

IPC: A61B5/1455 ,  A61B5/0295 ,  A61B5/145 ,  A61B5/00 ,  A61B5/024 ,  A61B5/026

Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.

公开(公告)号：US10727285B2

公开(公告)日：2020-07-28

申请号：US16027456

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chil Hee Chung ,  Sangyoon Lee ,  Yong Wan Jin ,  Kyung Bae Park ,  Kwang Hee Lee

IPC: H01L27/32 ,  G06K9/00 ,  H01L27/30 ,  G06F3/041

Abstract: An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack between the substrate and the OLED stack and including an NIR emitter configured to emit NIR light and an NIR detector. The OLED panel may be included in one or more various electronic devices.

公开(公告)号：US10212367B2

公开(公告)日：2019-02-19

申请号：US15435397

申请日：2017-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Hee Lee ,  Young Gu Jin ,  Yong Wan Jin

IPC: H04N5/33 ,  H01L27/00 ,  H01L27/28 ,  H04N5/359 ,  H04N5/378 ,  H04N5/374 ,  H01L27/146 ,  H01L27/30

Abstract: An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.

公开(公告)号：US20180331143A1

公开(公告)日：2018-11-15

申请号：US16026224

申请日：2018-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Wan JIN ,  Gae Hwang Lee ,  Seon-Jeong Lim ,  Sung Young Yun ,  Kwang Hee Lee

IPC: H01L27/146 ,  H04N1/00 ,  H01L27/30

CPC classification number: H01L27/14621 ,  H01L27/14601 ,  H01L27/1461 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14647 ,  H01L27/307 ,  H04N1/00

Abstract: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on one side of the photoelectric conversion device and configured to selectively transmit a mixed light including a third color, and an electronic device including the image sensor is provided.

公开(公告)号：US09997718B2

公开(公告)日：2018-06-12

申请号：US15008076

申请日：2016-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sakurai Rie ,  Yong Wan Jin ,  Sung Young Yun ,  Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Bulliard Xavier ,  Tadao Yagi

IPC: C07D495/22 ,  C09K11/06 ,  H05B33/14 ,  H01L51/50 ,  H01L51/00 ,  H01L27/30 ,  H01L51/42

CPC classification number: H01L51/0071 ,  C07D495/22 ,  C09K11/06 ,  H01L27/307 ,  H01L51/0051 ,  H01L51/0053 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0078 ,  H01L51/4253 ,  H01L2251/308 ,  H05B33/14

Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including an n-type semiconductor compound represented by Chemical Formula 1 and a p-type semiconductor compound having selective light absorption in a green wavelength region of about 500 nm to about 600 nm.