Abstract:
An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal for calibrating the image data. Light transmitting layers are disposed on a first side of a pixel array die including the imaging system and cover at least the imaging pixel array and the black reference pixel. A light shielding layer is disposed on the first side of the pixel array die and covers a portion of the light transmitting layers and the black reference pixel without covering the imaging pixel array.
Abstract:
An image sensor comprises an image sensor chip comprising a semiconductor substrate having a top surface and a plurality of microlenses disposed on the top surface; a cover glass having a first side in contact with air and a second side opposite to the first side; and a multi-layer structure disposed between the plurality of microlenses and the cover glass, which comprises: a bottom layer directly in contact with the plurality of microlenses, where the refractive index of the bottom layer is lower than the refractive index of the plurality of microlenses, and a top layer directly in contact with the second side of the cover glass, where the top layer is an optical glue made for bonding two optical elements.
Abstract:
Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.
Abstract:
A flip-chip sample imaging device with self-aligning lid includes an image sensor chip, a fan-out substrate, and a lid. The image sensor chip includes (a) a pixel array sensitive to light incident on a first side of the image sensor chip and (b) first electrical contacts disposed on the first side and electrically connected to the pixel array. The fan-out substrate is disposed on the first side, is electrically connected to the first electrical contacts, forms an aperture over the pixel array to partly define a sample chamber over the pixel array, and forms a first surface facing away from the first side. The lid is disposed on the first surface of the fan-out substrate, facing away from the first side, to further define the chamber. The lid includes an inner portion protruding into the aperture to align the lid relative to the fan-out substrate.
Abstract:
A liquid crystal display includes a display area and a border area at least partially surrounding the display area, where the display area displays images for viewing and the border area displays display-protection images, which are used to control ion migration in the liquid crystal layer. In a more particular embodiment, the border area displays a series of checkerboard pattern(s), where the checkerboard patterns can alternate between initial and inverted values. The display-protection images protect the liquid crystal display from migrating ions accumulating in particular regions of the pixel array and causing permanent defects in the display area. A liquid crystal display that includes a liquid crystal alignment layer having a plurality of liquid crystal alignment directions is also disclosed. The customized liquid crystal alignment director(s) over the border area promote ion migration away from the display area.
Abstract:
An image sensor system, comprising a pixel array that includes at least a first type pixel and a second type pixel, wherein each first type pixel is configured to sense light of a first optical spectral range; and each second pixel is configured to sense light of a second optical spectral range; an optical filter located above the pixel array, said optical filter configured to pass a third optical spectral range and a fourth optical spectral range that is different from the third optical spectral range, wherein the fourth optical spectral range is less than the second optical spectral range; a light source that emits light in a fifth optical spectral range, wherein the fifth optical spectral range at least overlaps with the fourth optical spectral range; and a controller that controls the image sensor system to selectively operate in a first mode that uses said first optical spectral range, and a second mode that uses said second optical spectral range.
Abstract:
An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.
Abstract:
A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.
Abstract:
A novel head mounted display includes a display/image sensor. In a particular embodiment the display/image sensor is formed on a single silicon die, which includes display pixels and light sensor pixels. The display pixels and light sensor pixels are each arranged in rows and columns, and the arrays of light sensor pixels and display pixels are interlaced. The center of each light sensor pixel is located between adjacent rows and adjacent columns of display pixels.
Abstract:
A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.