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    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    51.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME 失效
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US20100080065A1

    公开(公告)日：2010-04-01

    申请号：US12496064

    申请日：2009-07-01

    申请人： Jun FUJIKI ,  Koichi Muraoka ,  Naoki Yasuda

    发明人： Jun FUJIKI ,  Koichi Muraoka ,  Naoki Yasuda

    IPC分类号： G11C16/04 ,  H01L29/792

    CPC分类号： H01L29/7881 ,  G11C16/0466 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/792

    摘要： A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer.

    摘要翻译： 非易失性半导体存储器件包括存储单元和驱动单元。 存储单元具有半导体层，具有设置在沟道两侧的沟道以及源极区和漏极区; 设置在所述通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 以及设置在电荷保持层上的栅电极。 驱动单元在栅电极和半导体层之间施加具有恒定幅度和恒定频率的突发​​信号，并执行对电荷保持层进行编程和擦除电荷的操作中的至少一种。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    52.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20100072535A1

    公开(公告)日：2010-03-25

    申请号：US12506588

    申请日：2009-07-21

    申请人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

    发明人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

    IPC分类号： H01L29/792

    CPC分类号： H01L29/513 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/792

    摘要： A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film.

    摘要翻译： 非易失性半导体存储器件包括在半导体衬底中彼此分开设置的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道区域上的第一绝缘膜，设置在第一绝缘体上的电荷存储层 膜，设置在电荷存储层上并包括硅酸铝镧硅酸盐膜和由氧化硅或氮氧化硅制成的电介质膜的叠层结构的第二绝缘膜和设置在第二绝缘膜上的控制栅电极。

    NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS
    53.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS 有权
    非易失性半导体存储器件

    公开(公告)号：US20100052035A1

    公开(公告)日：2010-03-04

    申请号：US12403493

    申请日：2009-03-13

    申请人： Masahiro KOIKE ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    发明人： Masahiro KOIKE ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    IPC分类号： H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/513

    摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

    摘要翻译： 一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

    Semiconductor device and method of fabricating the same
    54.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07671473B2

    公开(公告)日：2010-03-02

    申请号：US11452376

    申请日：2006-06-14

    申请人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

    发明人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

    IPC分类号： H01L23/48

    CPC分类号： H01L21/02271 ,  H01L21/314 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

    摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

    摘要翻译： 提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。 半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层 层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。 第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。

    Semiconductor device and method of fabricating the same
    58.
    发明申请
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20060286814A1

    公开(公告)日：2006-12-21

    申请号：US11452376

    申请日：2006-06-14

    申请人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

    发明人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

    IPC分类号： H01L31/00 ,  H01L21/336

    CPC分类号： H01L21/02271 ,  H01L21/314 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

    摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

    摘要翻译： 提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。 半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层 层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。 第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。