发明授权
- 专利标题： Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device
- 专利标题（中）： 低介电常数材料，包含低介电常数材料的绝缘膜和半导体器件
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申请号： US10266794申请日： 2002-10-09
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公开(公告)号： US06924240B2公开(公告)日： 2005-08-02
- 发明人: Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
- 申请人： Hideharu Nobutoki , Teruhiko Kumada , Toshiyuki Toyoshima , Naoki Yasuda , Suguru Nagae
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2001-311405 20011009
- 主分类号： C08G79/08
- IPC分类号： C08G79/08 ; H01L21/312 ; H01L21/314 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L29/51 ; H01L21/31 ; H01L21/469
摘要：
A low dielectric constant material having excellent water resistance comprising a borazine skeleton structure represented by any one of the formulas (2) to (4): wherein R1 to R4 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkyiphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), provided that at least one of R1 to R4 is not a hydrogen atom.
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