公开(公告)号：US20150056368A1

公开(公告)日：2015-02-26

申请号：US14511273

申请日：2014-10-10

申请人： Headway Technologies, Inc.

发明人： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

IPC分类号： H01L43/12

CPC分类号： H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. A transition layer such as CoFeB/Co may be formed between the RL2 reference layer and tunnel barrier layer in a bottom spin valve design.

摘要翻译： 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 在室温至400℃下沉积除尘层。RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压材料。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在底部自旋阀设计中的RL2参考层和隧道势垒层之间形成诸如CoFeB / Co的过渡层。

公开(公告)号：US08962348B2

公开(公告)日：2015-02-24

申请号：US14032599

申请日：2013-09-20

申请人： Headway Technologies, Inc.

发明人： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC分类号： H01L21/00 ,  G11B5/33 ,  G11B5/127 ,  H01L43/10 ,  G01R33/09 ,  G01R33/12 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L29/82 ,  G11B5/39

CPC分类号： H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

摘要翻译： 公开了一种用于在自旋电子器件中形成MTJ的方法，并且包括在（Co / Ni）n组成的上覆层压层中增强垂直磁各向异性（PMA）的薄晶种层。 种子层优选为NiCr，NiFeCr，Hf或其复合物。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20150001656A1

公开(公告)日：2015-01-01

申请号：US14489507

申请日：2014-09-18

申请人： Headway Technologies, Inc.

发明人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L29/82

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L27/224 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

摘要： A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an FL2/AF coupling/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the SAF structure.

摘要翻译： 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有FL2 / AF耦合/ CoFeB配置，其中FL2是具有固有PMA的铁磁自由层。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 FL2层可以是L10有序合金，稀土 - 过渡金属合金或（A1 / A2）n层叠体，其中Al是Co，CoFe或其合金之一，A2是Pt，Pd， Rh，Ru，Ir，Mg，Mo，Os，Si，V，Ni，NiCo和NiFe，或Al为Fe，A2为V.还提供了形成SAF结构的方法。

公开(公告)号：US20140217529A1

公开(公告)日：2014-08-07

申请号：US14244937

申请日：2014-04-04

申请人： HEADWAY TECHNOLOGIES, INC.

发明人： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC分类号： H01L43/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

公开(公告)号：US20220149272A1

公开(公告)日：2022-05-12

申请号：US17582190

申请日：2022-01-24

申请人： Headway Technologies, Inc.

发明人： Santiago Serrano Guisan ,  Luc Thomas ,  Jodi Mari Iwata ,  Guenole Jan ,  Ru-Ying Tong

IPC分类号： H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  G11C11/16

摘要： A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/μm2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.

公开(公告)号：US11264566B2

公开(公告)日：2022-03-01

申请号：US16448348

申请日：2019-06-21

申请人： Headway Technologies, Inc.

发明人： Santiago Serrano Guisan ,  Luc Thomas ,  Jodi Mari Iwata ,  Guenole Jan ,  Ru-Ying Tong

IPC分类号： H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

摘要： A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/μm2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.

公开(公告)号：US11043632B2

公开(公告)日：2021-06-22

申请号：US16573087

申请日：2019-09-17

申请人： Headway Technologies, Inc.

发明人： Vignesh Sundar ,  Guenole Jan ,  Dongna Shen ,  Yi Yang ,  Yu-Jen Wang

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L27/22

摘要： A first pattern is formed on an MTJ stack as a first array of first parallel bands. A first ion beam etching is performed on the MTJ stack using the first pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the first parallel bands and the substrate is not rotated. Thereafter, a second pattern is formed on the MTJ stack as a second array of parallel bands wherein the second parallel bands are perpendicular to the first parallel bands. A second ion beam etching is performed using the second pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the second parallel bands and wherein the substrate is not rotated to complete formation of the MTJ structure.

公开(公告)号：US20210083180A1

公开(公告)日：2021-03-18

申请号：US16573087

申请日：2019-09-17

申请人： Headway Technologies, Inc.

发明人： Vignesh Sundar ,  Guenole Jan ,  Dongna Shen ,  Yi Yang ,  Yu-Jen Wang

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/02

摘要： A first pattern is formed on an MTJ stack as a first array of first parallel bands. A first ion beam etching is performed on the MTJ stack using the first pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the first parallel bands and the substrate is not rotated. Thereafter, a second pattern is formed on the MTJ stack as a second array of parallel bands wherein the second parallel bands are perpendicular to the first parallel bands. A second ion beam etching is performed using the second pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the second parallel bands and wherein the substrate is not rotated to complete formation of the MTJ structure.

公开(公告)号：US10950782B2

公开(公告)日：2021-03-16

申请号：US16275381

申请日：2019-02-14

申请人： Headway Technologies, Inc.

发明人： Santiago Serrano Guisan ,  Luc Thomas ,  Jodi Mari Iwata ,  Guenole Jan ,  Vignesh Sundar

IPC分类号： H01L43/02 ,  H01F10/32 ,  H01L43/10 ,  H01F41/34 ,  H01L43/12

摘要： A magnetic tunnel junction (MTJ) is disclosed wherein a nitride diffusion barrier (NDB) has a L2/L1/NL or NL/L1/L2 configuration wherein NL is a metal nitride or metal oxynitride layer, L2 blocks oxygen diffusion from an adjoining Hk enhancing layer, and L1 prevents nitrogen diffusion from NL to the free layer (FL) thereby enhancing magnetoresistive ratio and FL thermal stability, and minimizing resistance x area product for the MTJ. NL is the uppermost layer in a bottom spin valve configuration, or is formed on a seed layer in a top spin valve configuration such that L2 and L1 are always between NL and the FL or pinned layer, respectively. In other embodiments, one or both of L1 and L2 are partially oxidized. Moreover, either L2 or L1 may be omitted when the other of L1 and L2 is partially oxidized. A spacer between the FL and L2 is optional.

公开(公告)号：US20200212298A1

公开(公告)日：2020-07-02

申请号：US16236740

申请日：2018-12-31

申请人： Headway Technologies, Inc.

发明人： Yi Yang ,  Guenole Jan ,  Yu-Jen Wang

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/10

摘要： A MTJ stack is deposited on a bottom electrode, the stack comprising at least a pinned layer, a barrier layer, a free layer, and a top electrode layer. The top electrode and MTJ stack are etched where not covered by a photoresist pattern to form an MTJ structure. A conformal encapsulation dielectric is deposited over the MTJ structure. A magnetic metal layer is deposited on the encapsulation dielectric and anisotropically etched leaving a magnetic metal shield on sidewalls of the MTJ structure. A dielectric layer is deposited over the magnetic metal shield and MTJ structure. The dielectric layer and encapsulation dielectric are polished away to expose the top electrode. A top metal contact layer is deposited contacting the top electrode and the magnetic metal shield wherein the magnetic metal shield has no contact with said bottom electrode and MTJ structure but is separated from them by the encapsulation dielectric.