Advanced pattern definition for particle-beam exposure
    51.
    发明申请
    Advanced pattern definition for particle-beam exposure 有权
    粒子束曝光的高级图案定义

    公开(公告)号:US20050242303A1

    公开(公告)日:2005-11-03

    申请号:US11119514

    申请日:2005-04-29

    Abstract: In a pattern definition device for use in a particle-beam exposure apparatus a plurality of blanking openings (910) are arranged within a pattern definition field (bf) composed of a plurality of staggered lines (b1) of blanking openings, each provided with a deflection means controllable by a blanking signal (911); for the lines of blanking openings, according to a partition of the blanking openings of a line into several groups (g4,g5,g6), the deflection means of the blanking openings of each group are fed a common group blanking signal (911), and the group blanking signal of each group of a line is fed to the blanking means and connected to the respective blanking openings independently of the group blanking signals of the other groups of the same line.

    Abstract translation: 在用于粒子束曝光装置的图案定义装置中,多个消隐开口(910)被布置在由多个交错布线(b 1)组成的图案定义区域(bf)内,每个设置有消隐开口 由消隐信号(911)控制的偏转装置; 对于消隐开口的线,根据将线的消隐开口划分成若干组(g 4,g 5,g 6),每组的消隐开口的偏转装置被馈送到公共组消隐信号( 911),并且每组一组的组消隐信号被馈送到消隐装置并且独立于同一行的其他组的组消隐信号连接到各个消隐开口。

    Pattern definition device with multiple multibeam array
    52.
    发明授权
    Pattern definition device with multiple multibeam array 有权
    具有多个多波束阵列的模式定义设备

    公开(公告)号:US08546767B2

    公开(公告)日:2013-10-01

    申请号:US12959270

    申请日:2010-12-02

    Abstract: A multi-beam pattern definition device (102) for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means (202) comprises at least two sets of apertures (221, 222) for defining respective beamlets (b1-b5), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d12). An opening array means (201) has a plurality of openings (210) configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.

    Abstract translation: 用于粒子束处理或检查装置的多光束图案定义装置(102)被配置为用带电粒子的束(lp,bp)照射,以便形成若干待成像的子束 一个目标。 孔径阵列装置(202)包括用于限定各个子束(b1-b5)的至少两组孔(221,222),其中所述孔组包括布置在隔行布置中的多个孔,并且不同组的孔是 通过公共位移矢量(d12)彼此偏移。 开口阵列装置(201)具有多个开口(210),所述多个开口(210)构造成用于通过对应于所述一组孔的子束的子集,但是在对应于其它组的位置处的位置处缺少开口(对于不透明的) 孔。 定位装置相对于开口阵列装置移动孔径阵列装置,以选择性地使组的一组孔与开口阵列装置中的开口对准。

    Method for maskless particle-beam exposure
    53.
    发明授权
    Method for maskless particle-beam exposure 有权
    无掩模粒子束曝光方法

    公开(公告)号:US08115183B2

    公开(公告)日:2012-02-14

    申请号:US12770904

    申请日:2010-04-30

    Abstract: For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.

    Abstract translation: 对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置(v)相对于轴线横向移动(v)的目标, 对于像素曝光期间,图像的位置与目标一起移动,在该像素曝光期间,覆盖目标的相对运动的距离,该距离至少是孔径图像的宽度(w)的倍数, 目标,并且在所述像素曝光周期之后,光束图像的位置改变,位置的变化通常补偿光束图像的位置的整体移动。

    Charged particle beam exposure system
    54.
    发明授权
    Charged particle beam exposure system 有权
    带电粒子束曝光系统

    公开(公告)号:US08026495B2

    公开(公告)日:2011-09-27

    申请号:US12090632

    申请日:2005-10-28

    Abstract: A charged particle beam exposure system has a blanking aperture array (31) having groups of apertures (53) controlled by shift registers (75), wherein different inputs (C) to the shift registers influence a different number of apertures. Charged particle beamlets traversing the apertures are scanned across a charged particle sensitive substrate in synchronism with a clock signal of the shift registers.

    Abstract translation: 带电粒子束曝光系统具有由移位寄存器(75)控制的孔组(53)的消隐孔阵列(31),其中移位寄存器的不同输入(C)影响不同数量的孔。 与移位寄存器的时钟信号同步地,穿过孔径的带电粒子子束跨过带电粒子敏感衬底扫描。

    METHOD FOR MULTI-BEAM EXPOSURE ON A TARGET
    55.
    发明申请
    METHOD FOR MULTI-BEAM EXPOSURE ON A TARGET 有权
    目标上多束曝光的方法

    公开(公告)号:US20110226968A1

    公开(公告)日:2011-09-22

    申请号:US13051714

    申请日:2011-03-18

    CPC classification number: B82Y40/00 B82Y10/00 H01J37/3177

    Abstract: For irradiating a target with a beam of energetic electrically charged particles comprising a plurality of beamlets, the target is exposed in a sequence of exposure stripes composed image pixels. These stripes (s1, s2) are, at their boundaries to adjacent stripes, provided with overlap margins (m12, m21) which are mutually overlapped, so nominal positions of image pixels in the overlap margin (m21) overlap, or substantially coincide, with image pixels in the corresponding overlap margin (m12). During the exposure of an overlap margin (m21), a first subset (n1) of image pixels in said overlap margin are exposed while those of a second subset (n2), possibly a complementary subset with respect to a desired pattern, are not exposed; contrariwise, during the exposure of the corresponding overlap margin (m12), image pixels corresponding to image pixels in the first subset are not exposed, but those corresponding to image pixels in the second subset are.

    Abstract translation: 为了用包含多个子束的能量带电粒子束照射目标,目标以组成图像像素的曝光条纹的序列曝光。 这些条纹(s1,s2)在其相邻条纹的边界处设置有相互重叠的重叠边缘(m12,m21),因此重叠边界(m21)中图像像素的标称位置重叠或基本一致,与 相应重叠余量(m12)中的图像像素。 在重叠边缘(m21)的曝光期间,暴露所述重叠边缘中的图像像素的第一子集(n1),而第二子集(n2)可能相对于期望图案可能是互补子集的 ; 相反地​​,在曝光相应重叠余量(m12)期间,与第一子集中的图像像素相对应的图像像素不被曝光,但是对应于第二子集中的图像像素的像素是。

    Particle-beam exposure apparatus with overall-modulation of a patterned beam
    56.
    发明授权
    Particle-beam exposure apparatus with overall-modulation of a patterned beam 有权
    具有图案化波束的整体调制的粒子束曝光装置

    公开(公告)号:US07781748B2

    公开(公告)日:2010-08-24

    申请号:US12294262

    申请日:2007-03-16

    Abstract: In a charged-particle exposure apparatus for exposure of a target with a beam of electrically charged particles, the illumination system includes a deflector device adapted to vary the direction of incidence of the illuminating beam upon the pattern definition device, the pattern definition device forms the shape of the illuminating beam into a desired pattern, and the projection optics system projects an image of the beam shape defined in the pattern definition device onto the target; the projection optics system includes a blocking aperture device having an opening and being adapted to block passage of beams traversing outside the opening, namely when the deflector device is activated to tilt the beamlet by a sufficient angle from its non-deflected path, e.g., for blanking out during the process of loading a pattern into the pattern definition device.

    Abstract translation: 在用于用带电粒子束曝光目标物的带电粒子曝光装置中,照明系统包括偏转装置,该偏转装置适于改变在图案定义装置上的照射光束的入射方向,图案定义装置形成 将照明光束的形状形成为期望的图案,并且投影光学系统将在图案定义装置中限定的光束形状的图像投影到目标上; 投影光学系统包括具有开口并且适于阻挡穿过开口外侧的光束通过的阻挡孔径装置,即当偏转器装置被激活以使其与其非偏转路径足够的角度倾斜时,例如, 在将图案加载到图案定义装置的过程中消隐。

    METHOD FOR PRODUCING A MULTI-BEAM DEFLECTOR ARRAY DEVICE HAVING ELECTRODES
    57.
    发明申请
    METHOD FOR PRODUCING A MULTI-BEAM DEFLECTOR ARRAY DEVICE HAVING ELECTRODES 有权
    用于制造具有电极的多光束偏转器阵列装置的方法

    公开(公告)号:US20100187434A1

    公开(公告)日:2010-07-29

    申请号:US12692679

    申请日:2010-01-25

    CPC classification number: H01J37/045 H01J37/09 H01J37/3026 H01J2237/0437

    Abstract: The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.

    Abstract translation: 本发明涉及一种用于生产具有多个开口的多光束偏转器阵列器件的方法,所述多光束偏转器阵列器件用于粒子束曝光设备,特别是投影光刻系统,所述方法从CMOS晶片开始,并且包括以下步骤: 至少一对平行的沟槽在晶片坯料的第一侧上,在下面的电路层不起作用的区域的边缘处,沟槽到达散装材料层; 钝化沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中,从而产生用作电极的填充材料列; 将金属接触装置附接到电极的顶部; 构造电极之间的开口,所述开口延伸穿过上述区域,使得列在开口的侧壁上彼此相对布置。

    Multi-beam deflector array device for maskless particle-beam processing
    58.
    发明授权
    Multi-beam deflector array device for maskless particle-beam processing 有权
    用于无掩模粒子束处理的多光束偏转器阵列器件

    公开(公告)号:US07687783B2

    公开(公告)日:2010-03-30

    申请号:US12038326

    申请日:2008-02-27

    Abstract: The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

    Abstract translation: 本发明涉及一种用于使用带电粒子束的粒子束曝光装置中的多光束偏转器阵列装置,该多光束偏转器阵列装置具有带有膜区域的板状形状,该膜区域包括一个 第一面朝向输入的粒子束,一组孔,每个孔允许通过由粒子束形成的对应子束,多个凹陷,每个凹陷与至少一个孔相关联,以及阵列的 电极,每个孔与至少一个电极相关联,并且每个电极位于凹陷中,电极被配置为实现非偏转状态,其中允许通过孔的颗粒沿着期望的路径行进,并且 偏转状态,其中颗粒偏离所需的路径。

    MULTI-BEAM SOURCE
    60.
    发明申请
    MULTI-BEAM SOURCE 有权
    多波束源

    公开(公告)号:US20090026389A1

    公开(公告)日:2009-01-29

    申请号:US12178153

    申请日:2008-07-23

    Abstract: A multi-beam source for generating a plurality of beamlets of energetic electrically charged particles. The multi-beam source includes an illumination system generating an illuminating beam of charged particles and a beam-forming system being arranged after the illumination system as seen in the direction of the beam, adapted to form a plurality of telecentric or homocentric beamlets out of the illuminating beam. The beam forming system includes a beam-splitter and an electrical zone device, the electrical zone having a composite electrode composed of a plurality of substantially planar partial electrodes, adapted to be applied different electrostatic potentials and thus influencing the beamlets.

    Abstract translation: 一种用于产生能量带电粒子的多个子束的多光束源。 多光束源包括产生带电粒子的照明光束的照明系统,以及沿着光束的方向被布置在照明系统之后的束形成系统,适于在多个远心或同心圆的子束之外形成 照明光束。 光束形成系统包括分光器和电区设备,电区具有由多个基本上平面的部分电极组成的复合电极,其适于施加不同的静电电势并因此影响子束。

Patent Agency Ranking