Invention Grant
- Patent Title: Pattern definition device with multiple multibeam array
- Patent Title (中): 具有多个多波束阵列的模式定义设备
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Application No.: US12959270Application Date: 2010-12-02
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Publication No.: US08546767B2Publication Date: 2013-10-01
- Inventor: Elmar Platzgummer , Hans Loeschner
- Applicant: Elmar Platzgummer , Hans Loeschner
- Applicant Address: AT Vienna
- Assignee: IMS Nanofabrication AG
- Current Assignee: IMS Nanofabrication AG
- Current Assignee Address: AT Vienna
- Agency: Christie, Parker & Hale, LLP
- Priority: EP10450027 20100222
- Main IPC: G21K1/08
- IPC: G21K1/08

Abstract:
A multi-beam pattern definition device (102) for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means (202) comprises at least two sets of apertures (221, 222) for defining respective beamlets (b1-b5), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d12). An opening array means (201) has a plurality of openings (210) configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.
Public/Granted literature
- US20110204253A1 PATTERN DEFINITION DEVICE WITH MULTIPLE MULTIBEAM ARRAY Public/Granted day:2011-08-25
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