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公开(公告)号：US20180080124A1
公开(公告)日：2018-03-22
申请号：US15269405
申请日：2016-09-19
Applicant: APPLIED MATERIALS, INC.
Inventor： Geetika Bajaj , Ranga Rao Arnepalli , Prerna Sonthalia Goradia , Robert Jan Visser
IPC: C23C16/455 , C23C16/52 , C23F1/08
CPC classification number: C23C16/45565 , C09K13/00 , C23C16/45527 , C23C16/45544 , C23C16/45591 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32935 , H01J2237/334 , H01L21/32137
Abstract: Systems and methods for selectively etching and depositing material on the surface of a substrate are described. Systems for atomic layer etching (ALE) and atomic layer deposition (ALD) are described which enable alternating exposure to a first precursor and then a second precursor. The substrate processing region is configured to process large surface area substrate (e.g. 300 mm wafers) without requiring direct line-of-sight pathways between the gas inlet into the substrate processing chamber and all portions of the substrate. No plasma excites either of the two precursors either remotely or locally in embodiments. A quartz crystal microbalance is placed close to the substrate pedestal to quantify deposition and etching rates. Only thermal energy from the substrate is used to get the chemical reactions to proceed according to embodiments.
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公开(公告)号：US09875907B2
公开(公告)日：2018-01-23
申请号：US15235048
申请日：2016-08-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Fei Wang , Mikhail Korolik , Nitin K. Ingle , Anchuan Wang , Robert Jan Visser
IPC: H01L21/311 , H01L21/461 , H01L21/02 , H01L21/033 , H01J37/32 , H01L21/3105
CPC classification number: H01L21/31116 , H01J37/3244 , H01L21/02164 , H01L21/0217 , H01L21/0337 , H01L21/3105 , H01L21/31144
Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.
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公开(公告)号：US09673042B2
公开(公告)日：2017-06-06
申请号：US14842806
申请日：2015-09-01
Applicant: APPLIED MATERIALS, INC.
Inventor： Robert Jan Visser , Ranga Rao Arnepalli , Prerna Goradia
IPC: H01L21/02 , C23C16/02 , C23C16/24 , C23C16/56 , H01L21/768
CPC classification number: H01L21/02271 , C23C16/0227 , C23C16/0236 , C23C16/0272 , C23C16/24 , C23C16/56 , H01L21/02043 , H01L21/02068 , H01L21/02118 , H01L21/02277 , H01L21/02301 , H01L21/02304 , H01L21/02312 , H01L21/76829 , H01L21/76831 , H01L21/76834 , H01L21/76883
Abstract: A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.
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公开(公告)号：US20170137937A1
公开(公告)日：2017-05-18
申请号：US15286234
申请日：2016-10-05
Applicant: APPLIED MATERIALS, INC.
Inventor： Ranga Rao Arnepalli , Nilesh Chimanrao Bagul , Prerna Sonthalia Goradia , Robert Jan Visser
IPC: C23C16/448 , H01L21/02 , H01L21/311 , C23F1/08
CPC classification number: C23C16/4486 , H01L21/02107 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/30621 , H01L21/31116 , H01L21/32 , H01L21/465
Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.
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公开(公告)号：US12225808B2
公开(公告)日：2025-02-11
申请号：US18395081
申请日：2023-12-22
Applicant: Applied Materials, Inc.
Inventor： Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan , Dinesh Kabra , Gangadhar Banappanavar
Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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Patent Agency Ranking
公开(公告)号：US12163783B2
公开(公告)日：2024-12-10
申请号：US17236997
申请日：2021-04-21
Applicant: Applied Materials, Inc.
Inventor： Yeishin Tung , Byung Sung Kwak , Robert Jan Visser
Abstract: An organic light-emitting diode (OLED) deposition system has a workpiece transport system configured to position a workpiece within the OLED deposition system under vacuum conditions, a deposition chamber configured to deposit a first layer of organic material onto the workpiece, a metrology system having one or more sensors measure of the workpiece after deposition in the deposition chamber, and a control system to control a deposition of the layer of organic material onto the workpiece. The metrology system includes a digital holographic microscope positioned to receive light from the workpiece and generate a thickness profile measurement of a layer on the workpiece. The control system is configured to adjust processing of a subsequent workpiece at the deposition chamber or adjust processing of the workpiece at a subsequent deposition chamber based on the thickness profile.
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公开(公告)号：US20240284703A1
公开(公告)日：2024-08-22
申请号：US18642519
申请日：2024-04-22
Applicant: Applied Materials, Inc.
Inventor： Chung-Chih Wu , Po-Jui Chen , Hoang Yan Lin , Guo-Dong Su , Wei-Kai Lee , Chi-Jui Chang , Wan-Yu Lin , Byung Sung Kwak , Robert Jan Visser
IPC: H10K50/858 , H10K50/86 , H10K71/00
CPC classification number: H10K50/858 , H10K50/865 , H10K71/00
Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.
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公开(公告)号：US20240130210A1
公开(公告)日：2024-04-18
申请号：US18395081
申请日：2023-12-22
Applicant: Applied Materials, Inc.
Inventor： Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan , Dinesh Kabra , Gangadhar Banappanavar
CPC classification number: H10K71/00 , C23C14/12 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/568 , H10K71/164 , H10K71/70
Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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公开(公告)号：US20230247857A1
公开(公告)日：2023-08-03
申请号：US18132173
申请日：2023-04-07
Applicant: Applied Materials, Inc.
Inventor： Gang Yu , Chung-Chia Chen , Wan-Yu Lin , Hyunsung Bang , Lisong Xu , Byung Sung Kwak , Robert Jan Visser
IPC: H10K50/856 , H10K59/122 , H10K71/00
CPC classification number: H10K50/856 , H10K59/122 , H10K71/00 , H10K2102/3026
Abstract: An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.
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公开(公告)号：US11662516B2
公开(公告)日：2023-05-30
申请号：US17730280
申请日：2022-04-27
Applicant: Applied Materials, Inc.
Inventor： Michael Yu-tak Young , Wayne McMillan , Rutger Meyer Timmerman Thijssen , Robert Jan Visser
CPC classification number: G02B6/0065 , G02B6/0038 , G03F7/0002 , G03F7/0005
Abstract: Embodiments described herein relate to methods for fabricating waveguide structures utilizing substrates. The waveguide structures are formed having input coupling regions, waveguide regions, and output coupling regions formed from substrates. The regions are formed by imprinting stamps into resists disposed on hard masks formed on surfaces of the substrates to form positive waveguide patterns. Portions of the positive waveguide patterns and the hard masks formed under the portions are removed. The substrates are masked and etched to form gratings in the input coupling regions and the output coupling regions. Residual portions of the positive waveguide patterns and the hard masks disposed under the residual portions are removed to form waveguide structures having input coupling regions, waveguide regions, and output coupling regions formed from substrates.
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