公开(公告)号：US20130034653A1

公开(公告)日：2013-02-07

申请号：US13195151

申请日：2011-08-01

Applicant: Nitin Kumar ,  Nikhil D. Kalyankar ,  Zhi-Wen Sun

Inventor： Nitin Kumar ,  Nikhil D. Kalyankar ,  Zhi-Wen Sun

IPC: B05D5/06 ,  G02B5/22

CPC classification number: C09D183/04 ,  B05D5/06 ,  C03C17/009 ,  C03C2217/425 ,  C03C2217/732 ,  C03C2218/113 ,  C08L83/04 ,  C23C18/00

Abstract: Methods and compositions for forming durable porous low refractive index coatings on substrates are provided. In one embodiment, a method of forming a porous coating on a substrate is provided. The method comprises coating a substrate with a sol-formulation comprising a silane-based binder, silica-based nanoparticles, and an inter-particle interaction modifier for regulating interactions between the silica-based nanoparticles and annealing the coated substrate. Porous coatings formed according to the embodiments described herein demonstrate good optical properties (e.g., a low refractive index) while maintaining good mechanical durability due to the presence of the inter-particle interaction modifier. The inter-particle interaction modifier increases the strength of the particle network countering capillary forces produced during drying to maintain the porosity structure.

Abstract translation: 提供了在基底上形成耐久的多孔低折射率涂层的方法和组合物。 在一个实施方案中，提供了在基材上形成多孔涂层的方法。 该方法包括用包含硅烷基粘合剂，二氧化硅基纳米颗粒和颗粒间相互作用改性剂的溶胶制剂涂覆基材，以调节二氧化硅基纳米颗粒之间的相互作用并退火涂覆的基材。 根据本文所述的实施方案形成的多孔涂层由于存在颗粒间相互作用改性剂而保持良好的机械耐久性，表现出良好的光学性能（例如，低折射率）。 颗粒间相互作用调节剂增加了颗粒网络抵抗干燥期间产生的毛细管力的强度，以保持孔隙结构。

公开(公告)号：US20120251718A1

公开(公告)日：2012-10-04

申请号：US13072860

申请日：2011-03-28

Applicant: Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun

Inventor： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun

IPC: B05D5/00 ,  C09D7/12 ,  C09D5/00 ,  B05D3/00 ,  B05D3/02 ,  B82Y99/00

CPC classification number: C09D7/1266 ,  B82Y30/00 ,  C03C1/008 ,  C03C17/02 ,  C03C2203/30 ,  C03C2204/08 ,  C03C2218/113 ,  C08K5/0008 ,  C08L1/02 ,  C08L1/284 ,  C08L71/02 ,  C08L2201/00 ,  C09D1/00 ,  C09D5/00 ,  C09D7/65 ,  C09D7/67 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1295

Abstract: Embodiments of the invention generally relate to methods and compositions for forming conformal coatings on textured substrates. More specifically, embodiments of the invention generally relate to sol-gel processes and sol-gel compositions for forming low refractive index conformal coatings on textured transparent substrates. In one embodiment a method of forming a conformal coating on a textured glass substrate is provided. The method comprises coating the textured glass substrate with a sol-gel composition comprising a solidifier. It is believed that use of the solidifier expedites the sol-gel transition point of the sol-gel composition leading to more conformal deposition of coatings on textured substrates.

Abstract translation: 本发明的实施方案一般涉及在纹理化基底上形成保形涂层的方法和组合物。 更具体地，本发明的实施方案一般涉及在纹理透明基底上形成低折射率共形涂层的溶胶 - 凝胶法和溶胶 - 凝胶组合物。 在一个实施例中，提供了在纹理化玻璃基板上形成共形涂层的方法。 该方法包括用包含固化剂的溶胶 - 凝胶组合物涂覆织构化的玻璃基底。 据信，使用固化剂可加速溶胶 - 凝胶组合物的溶胶 - 凝胶转变点，从而导致涂层在纹理化基材上的更为适形的沉积。

公开(公告)号：US08278215B2

公开(公告)日：2012-10-02

申请号：US13098926

申请日：2011-05-02

Applicant: Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

Inventor： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

IPC: H01L21/44

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.

Abstract translation: 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料。

公开(公告)号：US20120156498A1

公开(公告)日：2012-06-21

申请号：US13160732

申请日：2011-06-15

Applicant: Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

Inventor： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

IPC: C23C16/52 ,  B32B5/16 ,  B05D1/18

CPC classification number: C23C18/1254 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00443 ,  B01J2219/00691 ,  B01J2219/00702 ,  B01J2219/00756 ,  C40B30/00 ,  C40B60/12 ,  Y10T428/2991

Abstract: Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.

Abstract translation: 本发明的实施例描述了通过浸涂工艺组合开发涂层的高性能组合方法和装置。 浸涂方法可用于多种应用，包括由不同溶胶 - 凝胶制剂形成涂层，用颗粒均匀地涂覆底物以组合测试颗粒去除配方，以及将基材浸渍到变形配方中以组合开发变形配方。

公开(公告)号：US08143164B2

公开(公告)日：2012-03-27

申请号：US12368110

申请日：2009-02-09

Applicant: Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

Inventor： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

Abstract translation: 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US20110207320A1

公开(公告)日：2011-08-25

申请号：US13098926

申请日：2011-05-02

Applicant: Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

Inventor： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

IPC: H01L21/768

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials

Abstract translation: 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料

公开(公告)号：US07968462B1

公开(公告)日：2011-06-28

申请号：US12267298

申请日：2008-11-07

Applicant: Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

Inventor： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

IPC: H01L21/44

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.

Abstract translation: 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料。

公开(公告)号：US07884036B1

公开(公告)日：2011-02-08

申请号：US11777152

申请日：2007-07-12

Applicant: Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

Inventor： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

IPC: H01L21/00

CPC classification number: H01L21/3105 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76849

Abstract: Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.

Abstract translation: 呈现用于处理衬底以用于后续工艺的方法，所述方法包括：接收衬底，所述衬底包括导电区域和电介质区域; 以及以使得电介质区域被氧化以变得越来越亲水的方式将氧化剂施加到衬底上，以便能够在随后的工艺中进入导电区域，其中将电介质区域处理到大约1至 5个原子层。 在一些实施例中，方法还包括处理衬底，其中选择性地增强对导电区域的处理。 在一些实施方案中，氧化剂包括大气压等离子体和UV辐射。

公开(公告)号：US20110020971A1

公开(公告)日：2011-01-27

申请号：US12791726

申请日：2010-06-01

Applicant: Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

Inventor： Zhi-Wen Sun ,  Nitin Kumar ,  Guizhen Zhang ,  Nikhil Kalyankar ,  Minh Anh Nguyen

IPC: H01L31/18 ,  B05D3/10

CPC classification number: B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00702 ,  B01J2219/00754 ,  B01J2219/00756 ,  C40B40/18 ,  C40B60/14 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

Abstract: Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least one of the depositing, the annealing, or the etching is performed combinatorially. Embodiments of the current invention also include improved methods of forming the TCO based on the results of combinatorial testing.

Abstract translation: 本发明的实施例包括通过组合方法改进形成纹理TCO膜的工艺的方法。 组合方法可以包括通过物理气相沉积或溅射沉积TCO，退火TCO，以及蚀刻TCO，其中组合进行沉积，退火或蚀刻中的至少一个。 本发明的实施例还包括基于组合测试的结果形成TCO的改进方法。

公开(公告)号：US20060201813A1

公开(公告)日：2006-09-14

申请号：US11333781

申请日：2006-01-17

Applicant: Todd Balisky ,  Donald Cameron ,  Zhi-Wen Sun

Inventor： Todd Balisky ,  Donald Cameron ,  Zhi-Wen Sun

IPC: C25D5/00 ,  C25D17/00 ,  C25B15/00

CPC classification number: G01N27/48

Abstract: A method and apparatus for analyzing plating solutions. The apparatus generally includes a plating cell, a reference electrolyte input, one or more external additive pumps, and a process controller. In one embodiment, the plating cell includes a cavity therein having a larger volumetric portion adjacent a smaller volumetric portion adapted to hold one or more solutions therein. The plating cell also includes a base disposed adjacent the bottom of the plating cell and adapted to receive and mix one or more test solutions as part of the plating solution analysis. In one configuration, the base includes electrical ports adapted to connect stimulation signals to a working electrode, counter electrode, and reference electrode disposed within the cell. The base also includes a thermal sensor in thermal contact with test solutions contained within the vessel.

Abstract translation: 一种用于分析电镀液的方法和装置。 该设备通常包括电镀槽，参考电解质输入，一个或多个外部添加剂泵以及过程控制器。 在一个实施例中，电镀单元包括其中具有较大体积部分的空腔，该体积部分邻近适于在其中容纳一种或多种溶液的较小体积部分。 电镀单元还包括邻近电镀单元的底部设置的底座，并适于接收和混合作为电镀溶液分析的一部分的一种或多种测试溶液。 在一种配置中，底座包括适于将刺激信号连接到设置在电池内的工作电极，对电极和参考电极的电气端口。 该基座还包括与容器内容纳的测试溶液热接触的热传感器。