公开(公告)号：US20080207249A1

公开(公告)日：2008-08-28

申请号：US12036508

申请日：2008-02-25

申请人： Ji-Hoon CHOI ,  Sung-Kwon JO

发明人： Ji-Hoon CHOI ,  Sung-Kwon JO

IPC分类号： H04B7/00

CPC分类号： H04W52/287 ,  H04W52/12 ,  H04W52/146 ,  H04W52/36

摘要： An apparatus and method for controlling power in a wireless mobile communication system are provided. The apparatus and method efficiently adjusts a threshold value in order to control closed-loop power through an outer-loop power control in a wireless mobile communication system. Accordingly, it is possible to increase cell capacity while link performance is stably maintained.

摘要翻译： 提供了一种用于在无线移动通信系统中控制功率的装置和方法。 该装置和方法有效地调整阈值，以便通过无线移动通信系统中的外环功率控制来控制闭环功率。 因此，可以在稳定地保持连接性能的同时增加电池容量。

公开(公告)号：US20080193314A1

公开(公告)日：2008-08-14

申请号：US11979928

申请日：2007-11-09

申请人： Kyung Rae Cho ,  Phil Soo Chang ,  Hyeong Joon Seo ,  In Ju Lee ,  Ji Hoon Choi

发明人： Kyung Rae Cho ,  Phil Soo Chang ,  Hyeong Joon Seo ,  In Ju Lee ,  Ji Hoon Choi

IPC分类号： F01C1/02

CPC分类号： F04C18/3564 ,  F01C21/0863 ,  F04C11/001 ,  F04C23/001 ,  F04C27/005 ,  F04C28/185

摘要： A rotary compressor including a housing having first and second compressing chambers separated from each other, first and second flanges coupled to the housing, to close the first and second compressing chambers, respectively, an intermediate plate to separate the first and second compressing chambers from each other, first and second rollers rotatably installed in the first and second compressing chambers, respectively, first and second vanes to reciprocate in a radial direction of the first and second compressing chambers to divide the first and second compressing chambers, respectively, and a vane control device to control the reciprocating movement of the first vane by use of a suction pressure and a discharge pressure, for a variation in compression capacity. A first gap, defined at an end of the first roller, is smaller than a second gap defined at an end of the second roller.

摘要翻译： 一种旋转压缩机，包括具有彼此分离的第一和第二压缩室的壳体，分别联接到壳体的第一和第二凸缘，以分别关闭第一和第二压缩室，中间板，以将第一和第二压缩室与每个 分别可旋转地安装在第一和第二压缩室中的第一和第二辊，第一和第二叶片分别在第一和第二压缩室的径向方向上往复运动，以分别分开第一和第二压缩室，叶片控制 装置，用于通过使用吸入压力和排出压力来控制第一叶片的往复运动，用于压缩容量的变化。 限定在第一辊的端部的第一间隙小于限定在第二辊的端部处的第二间隙。

公开(公告)号：US07406703B2

公开(公告)日：2008-07-29

申请号：US10693130

申请日：2003-10-23

申请人： Yong Ju Lee ,  Min-Sik Park ,  Ji-Hoon Choi ,  Jin Soo Choi ,  Jin Woong Kim

发明人： Yong Ju Lee ,  Min-Sik Park ,  Ji-Hoon Choi ,  Jin Soo Choi ,  Jin Woong Kim

IPC分类号： H04N7/10 ,  H04B1/66 ,  H04N7/16

CPC分类号： H04N21/2362 ,  H04N7/16 ,  H04N21/235 ,  H04N21/23608 ,  H04N21/23614 ,  H04N21/262 ,  H04N21/4348 ,  H04N21/435 ,  H04N21/8547

摘要： An apparatus and method for injecting synchronized stream data into a Motion Picture Experts Group 2 (MPEG-2) video/audio transport stream for a digital data broadcasting service. The apparatus and method for injecting synchronized stream data calculate the injection time point of data access unit (DAU) that forms the synchronized stream data and injects DAU into the MPEG-2 video/audio transport stream based on the calculated injection time point so that the synchronized stream data could be presented smoothly in a receiver. The synchronized stream data injecting apparatus includes: an additional data storing unit, a synchronized stream data selection/establishment unit, a synchronized stream data analyzing unit, a transport stream analyzing unit, a synchronized stream data injection/management unit, a presentation time stamp re-stamping unit and a multiplexing unit.

摘要翻译： 一种用于将同步流数据注入用于数字数据广播服务的运动图像专家组2（MPEG-2）视频/音频传输流的装置和方法。 用于注入同步流数据的装置和方法计算形成同步流数据的数据访问单元（DAU）的注入时间点，并且基于计算的注入时间点将DAU注入到MPEG-2视频/音频传输流中， 同步流数据可以在接收机中平滑地呈现。 同步流数据注入装置包括：附加数据存储单元，同步流数据选择/建立单元，同步流数据分析单元，传输流分析单元，同步流数据注入/管理单元，呈现时间戳 冲压单元和复用单元。

公开(公告)号：US20070015529A1

公开(公告)日：2007-01-18

申请号：US11487967

申请日：2006-07-18

申请人： Ji-Hoon Choi ,  Youn-Sun Kim ,  Sung-Kwon Jo ,  Ji-Won Lee

发明人： Ji-Hoon Choi ,  Youn-Sun Kim ,  Sung-Kwon Jo ,  Ji-Won Lee

IPC分类号： H04B7/00 ,  H04Q7/20

CPC分类号： H04W52/286 ,  H04W52/146 ,  H04W52/245 ,  H04W52/325 ,  H04W52/44

摘要： An apparatus and method for transmitting and receiving a symbol through a reverse control channel in a mobile communication system for providing packet data are provided. When reverse traffic is present, the apparatus and method can effectively demodulate and decode the reverse traffic. In a method for transmitting a reverse channel in the mobile communication system capable of discontinuously transmitting packet data, a transmission is performed by setting power of a Data Rate Indicator (DRI) channel to a predefined power when packet data is transmitted. When no packet data is transmitted, a transmission is performed by decreasing the power of the DRI channel.

摘要翻译： 提供了一种用于在用于提供分组数据的移动通信系统中通过反向控制信道发送和接收符号的装置和方法。 当存在反向业务时，该装置和方法可以有效地解调和解码反向业务。 在能够不连续地发送分组数据的移动通信系统中发送反向信道的方法中，当发送分组数据时，通过将数据速率指示符（DRI）信道的功率设置为预定义的功率来执行发送。 当不发送分组数据时，通过降低DRI信道的功率来进行发送。

公开(公告)号：US10002875B2

公开(公告)日：2018-06-19

申请号：US15466111

申请日：2017-03-22

申请人： Phil Ouk Nam ,  Hyung Joon Kim ,  Sung Gil Kim ,  Ji Hoon Choi ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn

发明人： Phil Ouk Nam ,  Hyung Joon Kim ,  Sung Gil Kim ,  Ji Hoon Choi ,  Seulye Kim ,  Hong Suk Kim ,  Jae Young Ahn

IPC分类号： H01L29/49 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/40 ,  H01L29/06

CPC分类号： H01L29/0653 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/402 ,  H01L29/408

摘要： A semiconductor device may include gate electrodes and interlayer insulating layers alternately stacked on a substrate, a channel layer penetrating the gate electrodes and the interlayer insulating layers, a gate dielectric layer between the gate electrodes and the channel layer, a filling insulation that fills at least a portion of an interior of the channel layer, a charge fixing layer between the channel layer and the filling insulation and including a high-k material and/or a metal, and a conductive pad connected to the channel layer and on the filling insulation. The conductive pad may be physically separated from the charge fixing layer.

公开(公告)号：US20180026046A1

公开(公告)日：2018-01-25

申请号：US15375944

申请日：2016-12-12

申请人： Phil Ouk NAM ,  Sung Gil KIM ,  Seulye KIM ,  Hong Suk KIM ,  Jae Young AHN ,  Ji Hoon CHOI

发明人： Phil Ouk NAM ,  Sung Gil KIM ,  Seulye KIM ,  Hong Suk KIM ,  Jae Young AHN ,  Ji Hoon CHOI

IPC分类号： H01L27/11582 ,  H01L29/423 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11556

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42324 ,  H01L29/4234

摘要： In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At least one of the gate electrode layers has a first portion and a second portion. The second portion forms an end portion of the at least one gate electrode layer, and a bottom surface of the second portion is at a lower level than a bottom surface of the first portion. A contact plug extends from the second portion.

公开(公告)号：US20170301689A1

公开(公告)日：2017-10-19

申请号：US15634555

申请日：2017-06-27

申请人： Ji-Hoon CHOI ,  SeungHyun LIM ,  Sunggil KIM ,  HongSuk KIM ,  Hunhyeong LIM ,  Hyunjun SIM

发明人： Ji-Hoon CHOI ,  SeungHyun LIM ,  Sunggil KIM ,  HongSuk KIM ,  Hunhyeong LIM ,  Hyunjun SIM

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

摘要： A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.

公开(公告)号：US20170084626A1

公开(公告)日：2017-03-23

申请号：US15239434

申请日：2016-08-17

申请人： Seulye Kim ,  Ji-Hoon CHOI ,  Dongkyum KIM ,  Jung Ho KIM ,  Jintae NOH ,  Eun-Young LEE

发明人： Seulye Kim ,  Ji-Hoon CHOI ,  Dongkyum KIM ,  Jung Ho KIM ,  Jintae NOH ,  Eun-Young LEE

IPC分类号： H01L27/115 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L27/11582 ,  H01L21/76831 ,  H01L23/485 ,  H01L27/11565

摘要： A three-dimensional semiconductor device includes a plurality of stack structures extending in one direction on a substrate and spaced apart from each other, a plurality of vertical structures penetrating the stack structures, a common source plug between the stack structures that are adjacent to each other and extending in parallel to the stack structures, and a spacer structure at each side of the common source plug. The stack structure has a sidewall defining recess regions vertically spaced apart from each other. The spacer structure covers sidewalls of the stack structures. The spacer structure includes an insulating spacer and a protection spacer. The insulating spacer fills the recess regions of the stack structure and includes a surface having grooves. The protection spacer fills the grooves of the surface of the insulating spacer and has a substantially flat surface.

公开(公告)号：US20170033044A1

公开(公告)日：2017-02-02

申请号：US15160137

申请日：2016-05-20

申请人： Ji-Hoon CHOI ,  Jung Ho KIM ,  Dongkyum KIM ,  Seulye KIM ,  Jintae NOH ,  Hyun-Jin SHIN ,  SeungHyun LIM

发明人： Ji-Hoon CHOI ,  Jung Ho KIM ,  Dongkyum KIM ,  Seulye KIM ,  Jintae NOH ,  Hyun-Jin SHIN ,  SeungHyun LIM

IPC分类号： H01L23/522 ,  G11C8/10 ,  H01L23/532 ,  H01L21/768 ,  H01L27/115 ,  H01L23/528

摘要： A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.

摘要翻译： 提供半导体器件。 半导体器件包括堆叠结构，其包括交替堆叠在衬底上的绝缘图案和电极结构以及垂直穿过堆叠结构的垂直沟道结构。 每个电极结构包括具有第一侧壁和与第一侧壁相对的第二侧壁的导电图案，第一侧壁上的第一蚀刻防止图案和第二侧壁上的第二蚀刻防止图案。

公开(公告)号：US20160276365A1

公开(公告)日：2016-09-22

申请号：US15066619

申请日：2016-03-10

申请人： JI-HOON CHOI ,  SEUNGHYUN LIM ,  SUNGGIL KIM ,  HONGSUK KIM ,  HUNHYEONG LIM ,  HYUNJUN SIM

发明人： JI-HOON CHOI ,  SEUNGHYUN LIM ,  SUNGGIL KIM ,  HONGSUK KIM ,  HUNHYEONG LIM ,  HYUNJUN SIM

IPC分类号： H01L27/115 ,  H01L29/10

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

摘要： A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.

摘要翻译： 一种半导体存储器件包括：堆叠，其包括依次层叠在基板上的栅极电极，相对于栅电极垂直地贯穿堆叠体的垂直绝缘结构，设置在垂直绝缘结构的内侧面的垂直沟道部， 源极区域形成在衬底中并且与垂直沟道部分间隔开。 垂直通道部分的底部区域具有与垂直绝缘结构的底部区域接触的突出表面。