Abstract:
A MEMS-based system and a method are described for separating a target particle from the remainder of a fluid stream. The system makes use of a unique, microfabricated movable structure formed on a substrate, which moves in a rotary fashion about one or more fixed points, which are all located on one side of the axis of motion. The movable structure is actuated by a separate force-generating apparatus, which is entirely separate from the movable structure formed on its substrate. This allows the movable structure to be entirely submerged in the sample fluid.
Abstract:
Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. A hermetic seal may be made around the device with a larger, secondary enclosure. Electrical access to the deformable plate may be accomplished by an electrical path which is independent of the seal. The electrical path may include a via through the first substrate or the second substrate, or a flash deposited on an external region of the switch.
Abstract:
A material for bonding a lid wafer to a device wafer, which includes an adhesive substance with rigid particles embedded in the adhesive substance. The rigid particles may be particles or spheres of alumina, silica, or diamond, for example. The adhesive substance may be glass frit, epoxy, glue, cement or solder, for example. When the adhesive is applied and melted, and pressure is applied between the lid wafer and the device wafer, the lid wafer approaches the device wafer until a minimum separation is reached, which is defined by the rigid particles.
Abstract:
A method for activating a getter at low temperature for encapsulation in a device cavity containing a microdevice comprises etching a passivation layer off the getter material while the device wafer and lid wafer are enclosed in a bonding chamber. A plasma etching process may be used, wherein by applying a large negative voltage to the lid wafer, a plasma is formed in the low pressure environment within the bonding chamber. The plasma then etches the passivation layer from the getter material, which is directly thereafter sealed within the device cavity of the microdevice, all within the etching/bonding chamber.
Abstract:
A material for forming a conductive structure for a micromechanical current-driven device is described, which is an alloy containing about 0.025% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower and more stable than the sheet resistance of the pure metal. Accordingly, when used for conductive leads in a photonic device, the leads using the NiMn alloy may provide current to heat the photonic device while generating less heat within the leads themselves, and a more stable output.
Abstract:
A MEMS hysteretic thermal actuator may have a plurality of beams disposed over a heating element formed on the surface of the substrate. The plurality of beams may be coupled to a passive beam which is not disposed over the heating element. One of the plurality of beams may be formed in a first plane parallel to the substrate, whereas another of the plurality of beams may be formed in a second plane closer to the surface of the substrate. When the heating element is activated, it heats the plurality of beams such that they move the passive beam in a trajectory that is neither parallel to nor perpendicular to the surface of the substrate. When the beams are cooled, they may move in a different trajectory, approaching the substrate before moving laterally across it to their initial positions. By providing one electrical contact on the distal end of the passive beam and another stationary electrical contact on the substrate surface, the MEMS hysteretic actuator may form a reliable electrical switch that is relatively simple to manufacture and operate.
Abstract:
A method for providing improved gettering in a vacuum encapsulated microdevice is described. The method includes designing a getter alloy to more closely approximate the coefficient of thermal expansion of a substrate upon which the getter alloy is deposited. Such a getter alloy may have a weight percentage of less than about 8% iron (Fe) and greater than about 50% zirconium, with the balance being vanadium and titanium, which may better match the coefficient of thermal expansion of a silicon substrate. In one exemplary embodiment, the improved getter alloy is deposited on a silicon substrate prepared with a plurality of indentation features, which increase the surface area of the substrate exposed to the vacuum. Such a getter alloy is less likely to delaminate from the indented surface of the substrate material during heat-activated steps, such as activating the getter material and bonding a lid wafer to the device wafer supporting the microdevice.
Abstract:
A material for bonding a first wafer to a second wafer, which includes an insulating adhesive with conductive particles embedded in the adhesive substance. When the adhesive is applied and melted or fused, and pressure is applied between the first wafer and the second wafer, the first wafer approaches the second wafer until a minimum separation is reached, defined by a dimension of the conductive particles. Each of the first wafer and the second wafer may have circuitry formed thereon, and the conductive particles may form a conductive path between the circuitry on one wafer and the circuitry on the other wafer. Advantageously, the high fusing temperature required by the insulating adhesive may also serve to activate a getter material, formed in the device cavity between the first wafer and the second wafer.
Abstract:
A method for providing access to a feature on a device wafer, and located outside an encapsulation region is described. The method includes forming a cavity in the lid wafer, aligning the lid wafer with the device wafer so that the cavity is located substantially above the feature, and removing material substantially uniformly from the bottom surface of the lid wafer, until an aperture is formed at the cavity, over the feature on the device wafer. By removing material from the lid wafer in a substantially uniform manner, difficulties with the prior art procedure of saw cutting, such as alignment and debris generation, are avoided.
Abstract:
A MEMS thermal switch is disclosed which couples a hot, expanding beam to a cool flexor beam using a slideably engaged tether, and bends the cool, flexor beam by the expansion of the hot beam. A rigidly engaged tether ties the distal ends of the hot, expanding beam and the cool, flexor beam together, whereas the slideably engaged tether allows the hot, expanding beam to elongate with respect to the cool, flexor beam, without loading the slideably engaged tether with a large shear force. As a result, the material of the tether can be made stiffer, and therefore transmit the bending force of the hot, expanding beam more efficiently to the cool, flexor beam.