公开(公告)号：US20230033788A1

公开(公告)日：2023-02-02

申请号：US17937787

申请日：2022-10-04

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  C30B29/44 ,  H01L21/02 ,  G02F1/355 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US11557716B2

公开(公告)日：2023-01-17

申请号：US15900599

申请日：2018-02-20

申请人： Akoustis, Inc.

发明人： Shawn R. Gibb ,  Steven Denbaars ,  Jeffrey B. Shealy

IPC分类号： H01L41/319 ,  H01L41/08 ,  H01L41/18 ,  H01L41/316 ,  C30B25/18 ,  C30B23/02 ,  C30B29/40 ,  C30B31/06 ,  H01L41/338 ,  H01L41/29 ,  H01L41/332 ,  H01L41/331 ,  H01L41/23

摘要： A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

公开(公告)号：US11555257B2

公开(公告)日：2023-01-17

申请号：US16797791

申请日：2020-02-21

申请人： NGK INSULATORS, LTD.

发明人： Takayuki Hirao ,  Hirokazu Nakanishi ,  Mikiya Ichimura ,  Takanao Shimodaira ,  Masahiro Sakai ,  Takashi Yoshino

IPC分类号： H01L33/00 ,  C30B29/40 ,  H01L33/18 ,  H01L33/30

摘要： A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to direction of the crystal of the nitride of the group 13 element.

公开(公告)号：US11549196B2

公开(公告)日：2023-01-10

申请号：US16783874

申请日：2020-02-06

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Hajime Fujikura

IPC分类号： C30B29/40 ,  H01L33/22 ,  C30B29/20 ,  H01L33/12

摘要： There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer provided on the base surface and having a surface on which protrusions are formed above the apices of the bumps.

公开(公告)号：US20220411962A1

公开(公告)日：2022-12-29

申请号：US17848927

申请日：2022-06-24

申请人： Panasonic Holdings Corporation

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Junichi TAKINO ,  Masayuki HOTEIDA ,  Shunichi MATSUNO

IPC分类号： C30B25/16 ,  C30B29/40 ,  C30B25/14 ,  C23C16/30 ,  C23C16/455

摘要： A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L1”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M1”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°

公开(公告)号：US11535952B2

公开(公告)日：2022-12-27

申请号：US17030727

申请日：2020-09-24

申请人： Infineon Technologies Americas Corp.

发明人： Mihir Tungare ,  Peter Kim ,  Jianwei Wan ,  Chankyung Choi

IPC分类号： C30B25/12 ,  C30B25/18 ,  C30B29/40 ,  C30B29/06 ,  C23C16/30 ,  C23C16/458 ,  H01L21/02 ,  H01L21/683 ,  H01L21/687 ,  H01L23/544 ,  C30B25/02

摘要： A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

公开(公告)号：US20220403547A1

公开(公告)日：2022-12-22

申请号：US17837364

申请日：2022-06-10

申请人： Panasonic Holdings Corporation

发明人： Masayuki HOTEIDA ,  Junichi TAKINO ,  Shunichi MATSUNO

IPC分类号： C30B25/14 ,  C30B25/12 ,  C30B29/40 ,  C23C16/30 ,  C23C16/455 ,  C23C16/458

摘要： The manufacturing apparatus for a group-III compound semiconductor crystal according to the present disclosure comprises a reaction container. The reaction container has a raw material reaction section, a crystal growth section, and a gas flow channel. The raw material reaction section has a raw material reaction chamber, and a raw material gas nozzle. The crystal growth section has a substrate supporting member, and reactive gas nozzles. The gas flow channel includes a first flow channel, a second flow channel, and a connection portion. The first flow channel has a first opening, and the second flow channel has a second opening. The area of the second opening is configured to be larger than the area of the first opening. The connection portion connects the first opening and the second opening with each other. The gas flow channel forms a gas flow path in the reaction container. The substrate supporting member is disposed inside the gas flow path and located on the downstream side of the first opening.

公开(公告)号：US20220372652A1

公开(公告)日：2022-11-24

申请号：US17761607

申请日：2021-04-27

申请人： WUXI WUYUE SEMICONDUCTOR CO. LTD.

发明人： Haitao ZHANG ,  Bin XU ,  Bo PANG ,  Lianghong LIU

IPC分类号： C30B25/18 ,  C30B29/40 ,  C30B25/16 ,  C23C14/06 ,  C23C14/34 ,  C23C14/58

摘要： The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO4 substrate, comprising following steps: (1) providing a ScAlMgO4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.

公开(公告)号：US11492726B2

公开(公告)日：2022-11-08

申请号：US16476348

申请日：2018-01-17

申请人： Vsevolod Vladimirovich Lundin ,  Andrey Fedorovich Tsatsulnikov ,  MONOLUM LTD ,  SOFT-IMPACT LTD

发明人： Vsevolod Vladimirovich Lundin ,  Andrey Fedorovich Tsatsulnikov ,  Evgenii Evgen'evich Zavarin ,  Evgenii Vladimirovich Iakovlev ,  Denis Stanislavovich Bazarevskii ,  Roman Aleksandrovich Talalaev

IPC分类号： C30B25/14 ,  C30B29/40 ,  H01L21/02 ,  B01F23/10 ,  H01L29/778 ,  B01F25/00

摘要： The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.

公开(公告)号：US11473212B2

公开(公告)日：2022-10-18

申请号：US15991317

申请日：2018-05-29

申请人： NGK INSULATORS, LTD.

发明人： Makoto Iwai ,  Takashi Yoshino

IPC分类号： H01L33/32 ,  C30B29/38 ,  C30B25/18 ,  H01L21/02 ,  C30B19/12 ,  C30B19/02 ,  H01L21/205 ,  H01L21/208 ,  C30B29/40 ,  H01L33/00

摘要： A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b.