公开(公告)号：US20240352623A1

公开(公告)日：2024-10-24

申请号：US18756348

申请日：2024-06-27

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC: C30B29/40 ,  C30B25/02 ,  C30B33/08

CPC classification number: C30B29/406 ,  C30B33/08 ,  C30B25/02

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US20220411964A1

公开(公告)日：2022-12-29

申请号：US17846768

申请日：2022-06-22

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Junichi TAKINO ,  Shunichi MATSUNO

IPC: C30B29/40 ,  C30B23/06 ,  C30B23/00

Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y

公开(公告)号：US20220325437A1

公开(公告)日：2022-10-13

申请号：US17717446

申请日：2022-04-11

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Akira KITAMOTO ,  Junichi TAKINO

IPC: C30B25/18 ,  C30B29/40 ,  C30B29/66

Abstract: A method of manufacturing a group III nitride crystal includes: preparing a seed substrate; causing surface roughness on the surface of the seed substrate; and supplying a group III element oxide gas and a nitrogen element-containing gas to grow a group III nitride crystal on the seed substrate.

公开(公告)号：US20230323563A1

公开(公告)日：2023-10-12

申请号：US18209840

申请日：2023-06-14

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC: C30B29/40 ,  C30B33/08

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B33/08

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US20220411962A1

公开(公告)日：2022-12-29

申请号：US17848927

申请日：2022-06-24

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Junichi TAKINO ,  Masayuki HOTEIDA ,  Shunichi MATSUNO

IPC: C30B25/16 ,  C30B29/40 ,  C30B25/14 ,  C23C16/30 ,  C23C16/455

Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L1”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M1”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°

公开(公告)号：US20220341056A1

公开(公告)日：2022-10-27

申请号：US17725958

申请日：2022-04-21

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Masayuki HOTEIDA ,  Shunichi MATSUNO

IPC: C30B29/38 ,  C30B25/02

Abstract: A group Ill nitride crystal manufacturing apparatus includes a raw material chamber generating a group Ill elemental oxide gas, and a growth chamber allowing the group Ill element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, and the growth chamber incudes a decomposition promoting part promoting decomposition of the unreacted nitrogen element- containing gas between the seed substrate and an exhaust port for discharging the unreacted group Ill oxide gas and the nitrogen element-containing gas.