公开(公告)号：US20220372652A1

公开(公告)日：2022-11-24

申请号：US17761607

申请日：2021-04-27

申请人： WUXI WUYUE SEMICONDUCTOR CO. LTD.

发明人： Haitao ZHANG ,  Bin XU ,  Bo PANG ,  Lianghong LIU

IPC分类号： C30B25/18 ,  C30B29/40 ,  C30B25/16 ,  C23C14/06 ,  C23C14/34 ,  C23C14/58

摘要： The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO4 substrate, comprising following steps: (1) providing a ScAlMgO4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.

公开(公告)号：US12065755B2

公开(公告)日：2024-08-20

申请号：US17761607

申请日：2021-04-27

申请人： WUXI WUYUE SEMICONDUCTOR CO. LTD.

发明人： Haitao Zhang ,  Bin Xu ,  Bo Pang ,  Lianghong Liu

IPC分类号： C30B25/18 ,  C23C14/06 ,  C23C14/34 ,  C23C14/58 ,  C30B25/16 ,  C30B29/40

CPC分类号： C30B25/183 ,  C23C14/0617 ,  C23C14/34 ,  C23C14/5806 ,  C30B25/16 ,  C30B29/406

摘要： The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO4 substrate, comprising following steps: (1) providing a ScAlMgO4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.