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公开(公告)号：US09899528B2
公开(公告)日：2018-02-20
申请号：US14890698
申请日：2015-10-21
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventor： Juncheng Xiao , Mang Zhao
IPC: H01L29/10 , H01L29/786 , H01L29/417 , H01L25/065 , G03F1/22
CPC classification number: H01L29/78621 , G03F1/22 , H01L25/0655 , H01L29/41733 , H01L29/66765 , H01L29/78624 , H01L29/78678 , H01L29/78696
Abstract: The disclosure provides a manufacturing method for TFT array substrate, a TFT array substrate and a display device. The manufacturing method includes following steps: in sequence, forming a gate pattern layer, a gate insulating layer, a patterned poly-silicon layer, a separation layer on s substrate, and adopting a mask to form a source pattern layer and a drain pattern layer on the separation layer by photolithography processes. The source pattern layer and the drain pattern layer are connected to the patterned poly-silicon layer. The mask blocks one side of the channel area, and the same mask is adopted to form a lightly doped area on the other side of the channel area not blocked by the mask. The disclosure may reduce production costs and has great design flexibility.
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公开(公告)号：US09824621B2
公开(公告)日：2017-11-21
申请号：US14778281
申请日：2015-04-03
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventor： Juncheng Xiao , Mang Zhao
IPC: G09G3/20 , G09G3/3266 , G09G3/36 , G11C19/28
CPC classification number: G09G3/2085 , G09G3/3266 , G09G3/3674 , G09G3/3677 , G09G2230/00 , G09G2300/0408 , G09G2300/0833 , G09G2310/021 , G09G2310/0243 , G09G2310/0286 , G09G2310/08 , G11C19/28 , G11C19/287
Abstract: A gate drive circuit and a display device are provided. The present disclosure pertains to the technical field of display technology and solves the technical problem of wide frame of the existing display device. The shifting register is configured to output primary drive signal into a first follower and a second follower in consecutive first scanning period t1 and second scanning period t2. The first follower is configured to output gate drive signal to a first gate line in t1 under the driving of the primary drive signal; and the second follower is configured to output the gate drive signal to a second gate line in t2 under the driving of the primary drive signal. The present disclosure can be applied to display devices, such as liquid crystal display devices and OLED display devices, and the like.
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公开(公告)号：US09799286B2
公开(公告)日：2017-10-24
申请号：US14781293
申请日：2015-08-28
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventor： Mang Zhao , Juncheng Xiao , Yong Tian
IPC: G09G3/36
CPC classification number: G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0809 , G09G2310/08
Abstract: A GOA circuit and LCD are disclosed. The GOA circuit includes cascaded GOA units and a control module. Each of the GOA units is driven by a first level of transfer clock, a second level of transfer clock, a first control clock and a second control clock to charge horizontal signal lines corresponding to a display area. The control module masks the first level of transfer clock and the second level of transfer clock when all of the horizontal signal lines are charged completely by the GOA circuit, such that the gate driving signals on the horizontal signal lines are discharged until the level equals to the predetermined level. In this way, the horizontal signal lines are prevented from generating redundant pulse signals before the first gate driving signals are outputted, which ensures the normal operations of the GOA circuit.
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公开(公告)号：US20170102805A1
公开(公告)日：2017-04-13
申请号：US15009803
申请日：2016-01-28
Inventor： Juncheng Xiao , Shangcao Cao , Yao Yan , Ronglei Dai
IPC: G06F3/041
CPC classification number: G06F3/0412 , G06F3/044 , G06F2203/04103
Abstract: The invention discloses a GOA circuit for in-cell type touch display panel; during black screen, using a first global control signal to make a thirteenth N-type TFT conductive to raise a scan driving signal of each stage to high, using the first global control signal to make a twelfth N-type TFT conductive to pull down a voltage level of a second node, and pulling down a voltage level of a first node to avoid ineffective all-gate-on function; using a reset signal and a fourteenth N-type TFT to reset the second node to realize the normal output after awaking from black screen; during stop, setting a negative voltage as a pulse signal having same amplitude, phase and frequency as a touch signal, using a second global control signal to make the fifteenth N-type TFT conductive to output the negative voltage in pulse form to reduce cross-talk between the touch signal and a scan output end.
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公开(公告)号：US11862642B2
公开(公告)日：2024-01-02
申请号：US16966119
申请日：2020-04-20
Inventor： Juncheng Xiao , Yong Xu , Fei Ai , Dewei Song
CPC classification number: H01L27/1225 , H01L27/1285 , H01L27/1288
Abstract: A display panel, an array substrate, and a manufacturing method thereof, wherein the array substrate includes a thin film transistor device, and an interface layer, a first transparent conductive layer, a passivation layer, and a second transparent conductive layer which are formed on the thin film transistor device in sequence. By replacing a planarization layer in the prior art with the interface layer, performing a gate re-etching process, and perforating the interface layer and the passivation layer to simultaneously form a deep via and a shallow via, a number of photomasks required to form the array substrate is reduced to 8. It effectively reduces costs of production materials and costs of photomasks.
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Patent Agency Ranking
公开(公告)号：US11557145B2
公开(公告)日：2023-01-17
申请号：US16956962
申请日：2020-04-02
Inventor： Juncheng Xiao , Fei Ai , Jiyue Song
IPC: G06V40/13 , H01L27/146
Abstract: A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.
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公开(公告)号：US11362118B2
公开(公告)日：2022-06-14
申请号：US16756350
申请日：2019-11-15
Inventor： Juncheng Xiao , Chao Tian , Yanqing Guan , Haiming Cao
IPC: H01L27/00 , H01L27/12 , G09G3/3225 , G09G3/36
Abstract: The present invention provides an array substrate, a manufacturing method thereof, and a display panel. Orthographic projections of channel layers of two types of thin film transistors in a design of a driving circuit on the array substrate at least partially overlap, that is, two thin film transistors are stacked on top of each other, thereby facilitating a narrow border design of the display panel. In addition, a channel layer of one of the thin film transistors is an amorphous oxide semiconductor layer, which can reduce node leakage in the driving circuit, which is conducive to improving circuit stability and reducing power consumption.
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公开(公告)号：US11239262B2
公开(公告)日：2022-02-01
申请号：US16630916
申请日：2019-11-06
Inventor： Juncheng Xiao , Chao Tian
IPC: H01L27/12 , H01L27/142 , H01L27/20
Abstract: An embodiment of the present invention discloses an array substrate, a method of fabricating the same, and a display panel. Compared with the conventional technology, the present invention combines a sensing material with thin film transistors to prepare a sensing layer on the thin film transistors, and since the thin film transistors can be formed by a large-area preparation, the sensors can be formed by a large-area preparation accordingly, thereby improving a performance of the sensors and reducing the production cost of the sensors.
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公开(公告)号：US11152490B2
公开(公告)日：2021-10-19
申请号：US16097891
申请日：2018-08-01
Inventor： Juncheng Xiao , Chao Tian
IPC: H01L29/00 , H01L29/66 , H01L21/8234 , H01L27/12 , H01L29/786
Abstract: The present disclosure provides an array substrate and a method for manufacturing the same. The method includes providing a substrate, and forming a polysilicon layer, a gate insulating layer, a second buffer layer, a patterned second metal layer, and a third buffer layer on the substrate in turn; forming a through-hole by a mask process, wherein the through-hole passes through the passivation layer, the third buffer layer, the second buffer layer, and the gate insulating layer to contact the polysilicon layer.
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公开(公告)号：US10977979B1
公开(公告)日：2021-04-13
申请号：US16965360
申请日：2020-06-19
Inventor： Juncheng Xiao , Chao Tian , Yanqing Guan , Yongxiang Zhou
IPC: G09G3/20
Abstract: A GOA circuit and a display panel are provided. The GOA circuit includes N stage GOA units, and an n-th stage GOA unit comprises a forward scan control module, a reverse scan control module, a pull-up module, a pull-down module, and a function module, wherein 2
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