ARRAY SUBSTRATE, METHOD OF MANUFACTURING SAME, AND DISPLAY PANEL

    公开(公告)号:US20220149085A1

    公开(公告)日:2022-05-12

    申请号:US16954253

    申请日:2019-12-30

    Abstract: The present invention provides a TFT array substrate, a manufacturing method thereof, and a display panel thereof, wherein the thin-film transistor (TFT) array substrate is defined with a first area and a second area, and includes a substrate layer, wherein a first TFT is disposed on the substrate layer in the first area, and a second TFT is disposed on the substrate layer in the second area; and wherein the first TFT is a top-gate TFT, the second TFT is a bottom-gate TFT, and a material used for a source/drain layer of the first TFT is same as a material used for a gate layer of the second TFT. The present invention provides a TFT array substrate, which adopts a novel film structure design, so that a low temperature poly-silicon (LTPS) TFT and Oxide TFT provided thereon can have great compatibility in the design and manufacturing process.

    LTPS array substrate and method for manufacturing same

    公开(公告)号:US11139316B2

    公开(公告)日:2021-10-05

    申请号:US16097917

    申请日:2018-08-01

    Abstract: The present disclosure provides an LTPS array substrate and a method for manufacturing the same. The method includes forming a polysilicon pattern by a first mask process; performing a doping treatment on the polysilicon pattern and forming a gate electrode by a second mask process; forming a source electrode through-hole and a drain electrode through-hole and a pixel electrode by a third mask process; forming a source electrode and a drain electrode and a touch control signal line by a fourth mask process; forming a touch control electrode through-hole by a fifth mask process; and forming a touch control electrode by a sixth mask process.

    MANUFACTURING METHOD FOR LTPS TFT SUBSTRATE
    3.
    发明申请

    公开(公告)号:US20200321475A1

    公开(公告)日:2020-10-08

    申请号:US16308814

    申请日:2018-09-22

    Abstract: A manufacturing method for LTPS TFT substrate is disclosed. Through performing two etchings on the gate metal layer, ion heavy doping and ion light doping of the polysilicon active layer are performed in a self-aligned manner such that the LDD structure of the polysilicon active layer is symmetrically distributed on two sides of the gate electrode, which is beneficial to improve device characteristics, is more stable and reliable than the conventional technology, and can reduce the number of process masks, save mask cost, operation cost, material cost and the time cost. The thinning process of the gate insulation layer can reduce the thickness of the gate insulation layer corresponding to the heavily doped region of the polysilicon active layer, so that the ion implantation efficiency can be effectively improved.

    GOA circuit and display device
    4.
    发明授权

    公开(公告)号:US10714044B1

    公开(公告)日:2020-07-14

    申请号:US16349625

    申请日:2018-10-10

    Abstract: A gate driver of array (GOA) circuit and a display device are disclosed. An n-th sub-circuit in the GOA circuit includes a control module, an output module, a pull-up supplement module, and a leakage switch. The pull-up supplement module includes a supplement switch and an auxiliary switch. The supplement switch is coupled to the auxiliary switch, the control module, and the output module. The auxiliary switch is coupled to the supplement switch, the control module, and the output module. The leakage switch is coupled to the control module, the output module, the supplement switch, and the auxiliary switch.

    Single type GOA circuit
    5.
    发明授权

    公开(公告)号:US10685593B2

    公开(公告)日:2020-06-16

    申请号:US16342209

    申请日:2018-09-11

    Abstract: A pixel driving circuit is provided. The pixel driving circuit comprises a reset module, a compensation module and light emitting module, wherein the reset module is configured to transmit a data signal to the compensation module to reset the compensation module under controlling of a first driving signal, the compensation module is configured to write the data signal to compensate a threshold voltage under controlling of a second driving signal, and the light emitting module is configured to emit light under controlling of a third driving signal.

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