公开(公告)号：US11142694B2

公开(公告)日：2021-10-12

申请号：US16565690

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-ah Kim ,  Young-chan Kim ,  Hyo-san Lee ,  Hoon Han ,  Jin-uk Lee ,  Jung-hun Lim ,  Ik-hee Kim

IPC: C09K13/04 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/11556 ,  H01L27/11582

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

公开(公告)号：US11028488B2

公开(公告)日：2021-06-08

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah Kim ,  Mihyun Park ,  Jinwoo Lee ,  Keonyoung Kim ,  Hyosan Lee ,  Hoon Han ,  Jin Uk Lee ,  Jung Hun Lim

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20180358544A1

公开(公告)日：2018-12-13

申请号：US16108316

申请日：2018-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Young Kim ,  Jin-Hye Bae ,  Hoon Han ,  Won-Jun Lee ,  Chang-Kyu Lee ,  Geun-Joo Baek ,  Jung-Ig Jeon

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

公开(公告)号：US09368647B2

公开(公告)日：2016-06-14

申请号：US14824786

申请日：2015-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young-Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: C09K13/04 ,  H01L29/792 ,  C09K13/06 ,  C23F1/16 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L27/115

CPC classification number: H01L29/7926 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract translation: 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US20160116836A1

公开(公告)日：2016-04-28

申请号：US14750651

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-young Kim ,  Dong-min Kang ,  Sung-bae Kim ,  Hoon Han ,  Hong-kwon Youn ,  Hyo-sun Lee ,  Young-taek Hong

IPC: G03F1/82 ,  C11D7/34 ,  C11D7/26 ,  C11D11/00

CPC classification number: G03F1/82 ,  B08B3/00 ,  B08B3/04 ,  C11D7/26 ,  C11D7/34 ,  C11D11/0047

Abstract: In a method of manufacturing an integrated circuit (IC) device, a photomask is wet-processed using a cleaning composition comprising an organic acid, an oxidizing agent, and deionized water (DIW).

Abstract translation: 在制造集成电路（IC）装置的方法中，使用包含有机酸，氧化剂和去离子水（DIW）的清洁组合物湿光处理光掩模。

公开(公告)号：US12261968B2

公开(公告)日：2025-03-25

申请号：US17752202

申请日：2022-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seo Lee ,  Seungchan Lee ,  Jaok Koo ,  Jonghoon Won ,  Yongsang Yun ,  Dasom Lee ,  Yunjeong Ji ,  Hoon Han

IPC: G06F1/16 ,  H04M1/02

Abstract: An electronic device is provided. The electronic device includes a foldable housing, a flexible display, at least one camera, at least one sensor and at least one processor, wherein the foldable housing includes a first housing having a first surface facing a first direction and a second surface facing a second direction opposite to the first direction, a first connecting member which is connected to a side surface of the first housing and which can be folded in a first rotating direction and unfolded in a second rotating direction, a second housing which is connected to the first connecting member and has a third surface facing the first direction and a fourth surface facing the second direction, and in which the flexible display is positioned on the third surface, a second connecting member connected to the side surface of the second housing, and a third housing which is connected to the second connecting member and has a fifth surface facing the first direction and a sixth surface facing the second direction.

公开(公告)号：US20250028329A1

公开(公告)日：2025-01-23

申请号：US18375078

申请日：2023-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinah KONG ,  Seungjoon Lee ,  Yeeun Choi ,  Hoon Han ,  Jiwoong Hwang ,  Hyoin Ahn ,  Yeojun Yoon

IPC: G05D1/246 ,  G05D107/40 ,  G05D111/10 ,  H04N23/695

Abstract: A robot device includes: a sensor; a memory storing map information corresponding to a predetermined space and including a plurality of zones; and a processor that identifies a position of user, identifies whether the user is positioned in a first zone among the plurality of zones, based on the identified position of the user and the map information, and based on identifying that the user is positioned in the first zone, identifies a movement path of the robot device based on remaining zones except for the first zone among the plurality of zones.

公开(公告)号：US12039161B2

公开(公告)日：2024-07-16

申请号：US17876254

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeojun Yoon ,  Soojung Lee ,  Yerin Park ,  Doeun Shin ,  Joayoung Lee ,  Yeonee Choi ,  Hoon Han

IPC: G06F3/04886 ,  G06F1/16 ,  G06F3/04845 ,  G06F9/451

CPC classification number: G06F3/04886 ,  G06F1/1681 ,  G06F3/04845 ,  G06F9/451 ,  G06F2203/04803

Abstract: An electronic device includes first and second touch screen displays and a processor configured to: based on receiving a first touch input on the first touch screen display and a second touch input on the second touch screen display at substantially a same time while displaying a first execution screen in a single window on the first and second touch screen displays, determine whether the first and second touch inputs are a screen split gesture when the first and second touch inputs start within a first boundary area of the first touch screen display and a second boundary area of the second touch screen display, respectively, and are released after moving a distance at substantially the same time; and display the first execution screen in a first split window on the first touch screen display and display a second execution screen in a second split window on the second touch screen display based on the screen split gesture.

公开(公告)号：US12033382B2

公开(公告)日：2024-07-09

申请号：US17959494

申请日：2022-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun Ko ,  Jiyeon Shin ,  Hoon Han ,  Yunjeong Ji

IPC: G06V20/20 ,  G06F3/03 ,  G06T3/40 ,  G06T11/00 ,  G06V40/20

CPC classification number: G06V20/20 ,  G06F3/03 ,  G06T3/40 ,  G06T11/00 ,  G06V40/28

Abstract: Provided is an electronic device including a body part, a glass member disposed on the body part, a display disposed on the glass member, a support part rotatably connected to the body part, a sensor including an eye tracking camera and a front camera configured to capture an image of a front side of a user, and a processor operatively connected to the display and the sensor, wherein the processor is configured to output at least one content via the display, recognize at least one object by the front camera, obtain the user's gaze dwell time for the object by the eye tracking camera, based on the gaze dwell time being longer than or equal to a reference time, obtain an area occupied by the object in a field of view (FOV) of the front camera, based on the area, output the at least one content on a region having no overlap with the object, or reduce a size of the at least one content and output the at least one content on one side of the display, and based on the user's gaze dwell time for the object being less than the reference time, output the at least one content in a type identical to an initial output type.

公开(公告)号：US20240071810A1

公开(公告)日：2024-02-29

申请号：US18312811

申请日：2023-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Hyea KO ,  Hoon Han ,  Byung Keun Hwang ,  Young Hun Sung ,  Youn Joung Cho

IPC: H01L21/762 ,  H01L21/8238

CPC classification number: H01L21/76224 ,  H01L21/823878 ,  H01L29/775

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.