公开(公告)号：US20230154973A1

公开(公告)日：2023-05-18

申请号：US18154218

申请日：2023-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyangsook LEE ,  Junghwa KIM ,  Eunha LEE ,  Jeonggyu SONG ,  Jooho LEE ,  Myoungho JEONG

IPC: H01L29/08 ,  H01L21/02

CPC classification number: H01L28/55 ,  H01L21/02433 ,  H01L21/02189 ,  H01L29/0847 ,  H01L21/02609 ,  H01L21/02516 ,  H01L21/02181 ,  H01L28/60

Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

公开(公告)号：US20230058762A1

公开(公告)日：2023-02-23

申请号：US17552680

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narae HAN ,  Jeonggyu SONG ,  Yongsung KIM ,  Jooho LEE ,  Eunae CHO

IPC: H01L49/02 ,  H01L27/06 ,  H01L27/108

Abstract: Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MxOy; and a leakage current reducing layer including a metal oxide represented by Lay′M′y′Oz′.

公开(公告)号：US20220140067A1

公开(公告)日：2022-05-05

申请号：US17334030

申请日：2021-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Younsoo KIM ,  Haeryong KIM ,  Boeun PARK ,  Eunha LEE ,  Jooho LEE ,  Hyangsook LEE ,  Yong-Hee CHO ,  Eunae CHO

IPC: H01L49/02 ,  H01L29/08

Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

公开(公告)号：US20220013623A1

公开(公告)日：2022-01-13

申请号：US17096239

申请日：2020-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20210358694A1

公开(公告)日：2021-11-18

申请号：US17116097

申请日：2020-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Yongsung KIM ,  Jooho LEE

IPC: H01G7/06 ,  H01L49/02

Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: V MAX = ( 1 +  Z 2   Z 1  ) ⁢ t F ⁢ E FM where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization.

公开(公告)号：US20210043445A1

公开(公告)日：2021-02-11

申请号：US17071310

申请日：2020-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Yongsung KIM ,  Jeongil BANG ,  Jooho LEE ,  Junghwa KIM ,  Haeryong KIM ,  Myoungho JEONG

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US20180010245A1

公开(公告)日：2018-01-11

申请号：US15368892

申请日：2016-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho LEE ,  Yongsung KIM ,  Sanghoon SONG ,  Wooyoung YANG ,  Changseung LEE ,  Sungjin LIM ,  Junsik HWANG

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  H01M4/04 ,  C23C16/44

CPC classification number: C23C16/34 ,  C23C16/045 ,  C23C16/06 ,  C23C16/308 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/515 ,  H01J37/32 ,  H01J37/3244 ,  H01J2237/3321 ,  H01M4/0428 ,  H01M4/13 ,  H01M10/052 ,  H01M2220/30 ,  H01M2300/0068

Abstract: A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.

公开(公告)号：US20160359202A1

公开(公告)日：2016-12-08

申请号：US15071059

申请日：2016-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woosung JEON ,  Jeoyoung SHIM ,  Gyeongsu PARK ,  Jooho LEE ,  Heegoo KIM ,  Jaewoo LEE

IPC: H01M10/42 ,  H02J7/00 ,  H01M4/131 ,  H01M10/0525 ,  H01M4/525

CPC classification number: H01M10/4257 ,  H01M4/131 ,  H01M4/505 ,  H01M4/525 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/0585 ,  H01M2004/025 ,  H01M2004/028 ,  H01M2010/0495 ,  H01M2010/4271 ,  H01M2010/4278 ,  H01M2220/30 ,  H02J7/0068

Abstract: A secondary battery structure includes a first electrode structure including a plurality of first electrode elements spaced apart from each other and disposed in a form of an array, a second electrode structure spaced apart from the first electrode structure and including a second electrode element, and an electrolyte which allows ions to move between the first electrode structure and second electrode structure, where the first electrode structure and the second electrode structure define a cathode and an anode, and the number of the first electrode elements and the number of the second electrode element are different from each other.

Abstract translation: 二次电池结构包括：第一电极结构，包括彼此间隔开并且以阵列形式设置的多个第一电极元件;与第一电极结构间隔开并包括第二电极元件的第二电极结构;以及 电解质，其允许离子在第一电极结构和第二电极结构之间移动，其中第一电极结构和第二电极结构限定阴极和阳极，并且第一电极元件的数量和第二电极元件的数量是 彼此不同。

公开(公告)号：US20240429267A1

公开(公告)日：2024-12-26

申请号：US18515009

申请日：2023-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Haeryong KIM ,  Jaeho LEE ,  Jooho LEE

IPC: H01G4/008 ,  H10B12/00

Abstract: A capacitor includes a first electrode including a conductive layer, a second electrode spaced apart from the first electrode, a dielectric layer disposed between the first electrode and the second electrode, and an interfacial layer disposed between the first electrode and the dielectric layer, wherein the conductive layer includes a first element, a second element, and a third element, the first element includes Ti or Al, the second element includes Ti, Al, Hf, Zr, Ta, Cr, Y, Sc, Si, Nb, Mo, V, W, Mn, Ni, or Co, the third element includes N, the first element and the second element are different from each other, and the conductive layer has a rock salt crystal structure.

公开(公告)号：US20240429043A1

公开(公告)日：2024-12-26

申请号：US18504712

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Jeonggyu SONG ,  Ilkwon OH ,  Beomseok KIM ,  Jooho LEE ,  Wonsik CHOI ,  Byungjun WON ,  Minjeong RHEE

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Provided is a method of forming an insulating film on a substrate by using atomic layer deposition (ALD). The method of forming an insulating film on a substrate by using ALD includes transferring a deposition-hindering material to the substrate, and depositing a first material layer by transferring a first precursor to the deposition-hindering material, wherein the deposition-hindering material includes an organic ligand, and the first precursor includes an alkoxide ligand.