公开(公告)号：US20220328615A1

公开(公告)日：2022-10-13

申请号：US17851836

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20220328616A1

公开(公告)日：2022-10-13

申请号：US17853290

申请日：2022-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20220013623A1

公开(公告)日：2022-01-13

申请号：US17096239

申请日：2020-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil BANG ,  Seungwoo JANG ,  Hyosik MUN ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/11507

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20210159072A1

公开(公告)日：2021-05-27

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung LEE ,  Woojin LEE ,  Myoungho JEONG ,  Yongsung KIM ,  Eunsun KIM ,  Hyosik MUN ,  Jooho LEE ,  Changseung LEE ,  Kyuho CHO ,  Darrell G. SCHLOM ,  Craig J. FENNIE ,  Natalie M. DAWLEY ,  Gerhard H. OLSEN ,  Zhe WANG

IPC: H01L21/02 ,  H01L49/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US20200091278A1

公开(公告)日：2020-03-19

申请号：US16392097

申请日：2019-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho JUNG ,  Sangyeol KANG ,  Kyuho CHO ,  Eunsun KIM ,  Hyosik MUN

IPC: H01L49/02

Abstract: A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.