公开(公告)号：US10211243B2

公开(公告)日：2019-02-19

申请号：US15945541

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.

公开(公告)号：US10153310B2

公开(公告)日：2018-12-11

申请号：US15213082

申请日：2016-07-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Vincent Venezia ,  Gang Chen ,  Dyson H. Tai ,  Duli Mao

IPC: H01L27/144 ,  H01L31/0232 ,  H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  G01J1/44

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.

公开(公告)号：US10147754B2

公开(公告)日：2018-12-04

申请号：US15439793

申请日：2017-02-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Cunyu Yang ,  Gang Chen ,  Jing Ye ,  Xi-Feng Gao ,  Jiaming Xing

IPC: H01L27/00 ,  H01L27/146

Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.

公开(公告)号：US20180226448A1

公开(公告)日：2018-08-09

申请号：US15945541

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.

公开(公告)号：US20180151609A1

公开(公告)日：2018-05-31

申请号：US15362402

申请日：2016-11-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Chih-Wei Hsiung

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.

公开(公告)号：US09966408B1

公开(公告)日：2018-05-08

申请号：US15791191

申请日：2017-10-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dajiang Yang ,  Gang Chen ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L21/00 ,  H01L27/146 ,  H01L21/265 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L27/14643 ,  H01L21/26513 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: A method of image sensor fabrication includes forming a photodiode and a floating diffusion in a first semiconductor material, and removing part of an oxide layer disposed proximate to a seed area on a surface of the first semiconductor material. The method also includes depositing a second semiconductor material over the surface of the first semiconductor material, and annealing the first semiconductor material and second semiconductor material. A portion of the second semiconductor material is etched away to form part of a source follower transistor, and dopant is implanted into the second semiconductor material to form a first doped region, a third doped region, and a second doped region. The second doped region is laterally disposed between the first doped region and the third doped region, and the second doped region is a channel of the source follower transistor.

公开(公告)号：US09966404B2

公开(公告)日：2018-05-08

申请号：US15430071

申请日：2017-02-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.

公开(公告)号：US09955090B2

公开(公告)日：2018-04-24

申请号：US15215139

申请日：2016-07-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Xin Wang ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/355 ,  H04N9/04 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/35563 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

公开(公告)号：US20180084185A1

公开(公告)日：2018-03-22

申请号：US15273338

申请日：2016-09-22

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Dyson H. Tai

IPC: H04N5/232 ,  H04N5/225 ,  G02B3/00 ,  G02B5/20 ,  G02B7/36 ,  G03B13/36

CPC classification number: H04N5/23212 ,  G02B3/0018 ,  G02B3/0056 ,  G02B5/20 ,  G02B7/36 ,  G03B13/36 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/3696

Abstract: A PDAF imaging system includes an image sensor and an image data processing unit. The image sensor has an asymmetric-microlens PDAF detector that includes: (a) a plurality of pixels forming a sub-array having at least two rows and two columns, and (b) a microlens located above each of the plurality of pixels and being rotationally asymmetric about an axis perpendicular to the sub-array. The axis intersects a local extremum of a top surface of the microlens. The image data processing unit is capable of receiving electrical signals from each of the plurality of pixels and generating a PDAF signal from the received electrical signals. A method for forming a gull-wing microlens includes forming, on a substrate, a plate having a hole therein. The method also includes reflowing the plate.

公开(公告)号：US20180041723A1

公开(公告)日：2018-02-08

申请号：US15228874

申请日：2016-08-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Keiji Mabuchi ,  Dyson H. Tai ,  Oray Orkun Cellek ,  Duli Mao ,  Sohei Manabe

IPC: H04N5/355 ,  H01L27/146 ,  H04N9/04 ,  H04N5/378 ,  H04N5/3745

Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.