公开(公告)号：US4835392A

公开(公告)日：1989-05-30

申请号：US123128

申请日：1987-11-20

Applicant: Hans Loschner ,  Gerhard Stengl

Inventor： Hans Loschner ,  Gerhard Stengl

IPC: H01J37/08 ,  H01J37/12 ,  H01J37/147 ,  H01J37/30

CPC classification number: H01J37/1477 ,  H01J37/3007

Abstract: An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

Abstract translation: 一种离子投射装置，其在离子源和掩模之间具有直接接近掩模的至少一个离子光学校正元件，其具有至少八个极点的多极形式，并且位于两者之间， 八极和面具。

公开(公告)号：US4780382A

公开(公告)日：1988-10-25

申请号：US930812

申请日：1986-11-13

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/20 ,  H01L21/027 ,  G03F9/00 ,  G03C5/00 ,  G21K5/00

CPC classification number: G03F1/20 ,  Y10S430/167

Abstract: The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.

Abstract translation: 本发明是一种制造透射掩模的方法，该透射掩模可用于通过两层电镀沉积形成掩模结构，另一种覆盖掩模中的开口的栅格结构，以加法或减法的方式构造半导体衬底 结构体。 结构的厚度可自由选择自调节（在已知工程方法的限度内）。 目的是生产在掩模表面上方具有恒定有效厚度的透射掩模。

公开(公告)号：US4370556A

公开(公告)日：1983-01-25

申请号：US217064

申请日：1980-12-16

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: H01L21/263 ,  G03F1/20 ,  G03F7/20 ,  G21K1/10 ,  H01L21/027 ,  G01J1/00

CPC classification number: G03F1/20 ,  G03F7/70691 ,  G03F7/708 ,  G21K1/10

Abstract: Mask for use in the treatment of substrates with an image-forming medium. The mask foil is thermally prestressed by the frame at the temperature of use. For this purpose, the material of the frame has a higher coefficient of thermal expansion than the material of the mask foil. A method of manufacturing such masks includes the step wherein the mask foil is mounted in the frame at a temperature which lies below the temperature of use.

Abstract translation: 用于用成像介质处理底物的掩模。 掩模箔在使用温度下由框架预热。 为此，框架的材料具有比掩模箔的材料更高的热膨胀系数。 制造这种掩模的方法包括以下步骤：其中掩模箔以低于使用温度的温度安装在框架中。

公开(公告)号：US06326632B1

公开(公告)日：2001-12-04

申请号：US09417633

申请日：1999-10-13

Applicant: Herbert Buschbeck ,  Alfred Chalupka ,  Gertraud Lammer ,  Hans Loeschner ,  Gerhard Stengl

Inventor： Herbert Buschbeck ,  Alfred Chalupka ,  Gertraud Lammer ,  Hans Loeschner ,  Gerhard Stengl

IPC: G21K108

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/04924

Abstract: In a particle-optical imaging lithography system, an illuminating system comprising a particle source and a first electrostatic lens arrangement produces a particle beam which penetrates a mask foil provided with an orifice structure positioned in the particle beam path. This structure is imaged on a substrate plane by a projection system comprising a second electrostatic lens arrangement. The first and second lens arrangements each comprise, on their respective sides facing the mask holding device, at least one pre- and post-mask electrode, respectively. By applying different electrostatic potentials to the pre- and post-mask electrodes and to the mask foil, the mask foil and the pre-mask electrode form a grid lens with negative refracting power, and the mask foil and the post-mask electrode also form a grid lens with negative refracting power.

Abstract translation: 在粒子光学成像光刻系统中，包括粒子源和第一静电透镜装置的照明系统产生穿透设置有位于粒子束路径中的孔结构的掩模箔的粒子束。 该结构通过包括第二静电透镜装置的投影系统在基板平面上成像。 第一和第二透镜装置在其面对掩模保持装置的相应侧面上分别包括至少一个前和后掩模电极。 通过对前后掩模电极和掩模箔施加不同的静电电位，掩模箔和预掩模电极形成具有负折射力的网格透镜，并且掩模箔和后掩模电极也形成 具有负折射力的网格透镜。

公开(公告)号：US5874739A

公开(公告)日：1999-02-23

申请号：US914070

申请日：1997-08-18

Applicant: Herbert Buschbeck ,  Alfred Chalupka ,  Hans Loeschner ,  Gerhard Stengl ,  Herbert Vonach

Inventor： Herbert Buschbeck ,  Alfred Chalupka ,  Hans Loeschner ,  Gerhard Stengl ,  Herbert Vonach

IPC: G03F7/20 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027 ,  H01J37/317

CPC classification number: H01J37/12 ,  G03F7/2047 ,  H01J2237/04924 ,  H01J2237/3175

Abstract: An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale. The diverging lens is preferably disposed in the beam direction at a distance to the rear of the collector lens in immediate proximity of the mask in order to be able to use the mask as a grating for the diverging lens.

Abstract translation: 一种用于通过聚焦带电粒子的方法，用于通过聚焦带电粒子的方法将掩模的结构成像在立即设置在其后面的基底上，包括产生发散粒子的粒子源（2）和提取系统（3） 并且包括用于聚焦发散粒子束的透镜（6），所述透镜（6）包括至少包括至少包括电极装置（6a，6b，6c，6d，6e，6f，6g，6h） 一个静电收集透镜（6a至6f与静电发散透镜（6g，6h）结合），以便能够针对发散透镜的透镜误差以有目的的方式补偿收集透镜的透镜误差，并使其成为可能 成像刻度的可预先确定的变化，发散透镜优选地设置在光束方向上，在与掩模紧密接近的集光透镜的后方一定距离处，以便被遮蔽 e使用掩模作为发散透镜的光栅。

公开(公告)号：US5742062A

公开(公告)日：1998-04-21

申请号：US598081

申请日：1996-02-08

Applicant: Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach ,  Hans Loeschner

Inventor： Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach ,  Hans Loeschner

IPC: G21K5/04 ,  G03F7/20 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04735 ,  H01J2237/04924 ,  H01J2237/31755 ,  H01J2237/31788

Abstract: An arrangement for masked beam lithography by means of electrically charged particles for the imaging of structures of a mask on a substrate arranged behind it, with a substantially punctiform particle source (Q) and an extraction system (Ex) for a specific type of charged particles which leave the source (Q) in the form of a divergent particle beam, and with an electrode arrangement (B, B', El.sub.1, El.sub.2, E.sub.3, . . . El.sub.n) for concentrating the divergent particle beam into a particle beam which is at least approximately parallel, by means of which an electrostatic acceleration field (E) is generated, the potential (U) of which in the beam direction has a constant gradient at least in parts and perpendicular to the beam direction is substantially constant at least within the beam cross-section. The electrode arrangement can be formed for example by a plurality of coaxial ring electrodes (El.sub.1, El.sub.2, El.sub.3, . . . El.sub.n) which are disposed at intervals behind one another in the beam direction, by a coaxial hollow cylinder which is aligned in the beam direction or a grating with a predetermined constant electrical resistance per unit of length, or by a plurality of longitudinal bars which are aligned in the beam direction, disposed parallel on surface of an imaginary coaxial cylinder with a predetermined constant electrical resistance per unit of length.

Abstract translation: 用于通过带电粒子进行掩模束光刻的布置，用于对布置在其后面的基板上的掩模的结构进行成像，具有基本上点状的粒子源（Q）和用于特定类型的带电粒子的提取系统（Ex） 其以发散粒子束的形式离开源极（Q），并且具有用于将发散粒子束集中到粒子束中的电极装置（B，B'，El1，El2，E3，...，Eln） 至少近似平行，通过该静电加速场产生静电加速度场（E），至少在波束方向的至少部分和垂直于波束方向的波束方向的电位（U）至少在 梁横截面。 电极布置可以由例如多个同轴环电极（E11，E12，E13 ...，Eln）形成，这两个同轴环电极通过一个同轴的中空圆筒形成，该同轴环形电极沿光束方向彼此间隔设置， 光束方向或具有每单位长度的预定恒定电阻的光栅，或通过沿着光束方向对准的多个纵向条，平行于虚拟同轴圆柱体的表面设置，每单位长度具有预定的恒定电阻 。

公开(公告)号：US5693950A

公开(公告)日：1997-12-02

申请号：US666495

申请日：1996-09-03

Applicant: Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

Inventor： Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

IPC: G03F7/20 ,  H01J37/09 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027 ,  H01L21/266 ,  H01L21/263

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/153 ,  H01J2237/31755 ,  H01J2237/31788

Abstract: A charged particle, in particular ion projector system, has a mask arranged in the path of the charged particle beam and provided with transparent spots, in particular openings, arranged asymmetrically to the optical axis, which are reproduced on a wafer by means of lenses arranged in the path of the charged particle beam. The charged particle beam has at least one cross-over (crosses the optical axis at least once) between the mask and the wafer. Charged particles with an opposite charge to the charge of the reproduction particles are supplied into the path of the reproduction charged particle beam in a defined area located between the mask and the wafer. The limits that define said area are selected in such a way that the absolute value of the integral effect of the space charge on the particles that reproduce the mask structures is as high upstream of said area (seen in the direction of radiation) as the absolute value of the integral effect of the space charge downstream of said area.

Abstract translation: PCT No.PCT / AT95 / 00004 Sec。 371日期1996年9月3日 102（e）1996年9月3日PCT 1995年1月12日PCT PCT。 出版物WO95 / 19640 日期1995年7月20日带电粒子，特别是离子投影仪系统，具有布置在带电粒子束的路径中的掩模，并且具有布置成不对称的光轴的透明点，特别是在晶片上再现的光轴 通过布置在带电粒子束的路径中的透镜。 带电粒子束在掩模和晶片之间具有至少一个交叉（与光轴交叉至少一次）。 与再现粒子的电荷相反的带电粒子被提供到位于掩模和晶片之间的限定区域中的再现带电粒子束的路径中。 限定所述区域的限制是这样选择的，即空间电荷对再现掩模结构的颗粒的积分效应的绝对值在所述区域的上游（在辐射方向上看到）为绝对值，绝对值 所述区域下游空间电荷积分效应的值。

公开(公告)号：US5378917A

公开(公告)日：1995-01-03

申请号：US40536

申请日：1993-03-30

Applicant: Alfred Chalupka ,  Gerhard Stengl ,  Herbert Vonach

Inventor： Alfred Chalupka ,  Gerhard Stengl ,  Herbert Vonach

IPC: G03F7/20 ,  H01J37/12 ,  H01J37/30 ,  H01L21/027

CPC classification number: H01J37/3007 ,  H01J37/12

Abstract: In an ion optical imaging system, especially for lithographic imaging on a wafer, two collecting lenses are provided between the mask and the wafer. At least one of the collecting lenses is a three-electrode grid lens, i.e. a lens in which a grid is disposed perpendicular to the optical axis between a pair of tubular electrodes.

Abstract translation: 在离子光学成像系统中，特别是对于晶片上的光刻成像，在掩模和晶片之间提供两个收集透镜。 收集透镜中的至少一个是三电极网格透镜，即其中格栅垂直于一对管状电极之间的光轴布置的透镜。

公开(公告)号：US4859857A

公开(公告)日：1989-08-22

申请号：US9414

申请日：1987-01-30

Applicant: Gerhard Stengl ,  Hans Loschner ,  Peter Wolf

Inventor： Gerhard Stengl ,  Hans Loschner ,  Peter Wolf

IPC: G03F7/20 ,  H01J37/153 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/1516 ,  H01J2237/30455 ,  H01J2237/31776

Abstract: A multipole corrective element with the individual poles being electromagnetically energized individually and selectively to create a variable field around a charged particle beam projected through a mask and a lens system onto a substrate, e.g. an ion-beam or electron-beam microlithography. The corrective element is provided independently of the ion-optical lens system between the latter and the mask, preferably proximal to the mask.

Abstract translation: 具有各个极的多极校正元件被单独和选择性地电磁激励，以在通过掩模和透镜系统投射到基底上的带电粒子束周围产生可变场，例如。 离子束或电子束微光刻法。 独立于后者和掩模之间的离子 - 光学透镜系统提供的校正元件，优选地靠近掩模。

公开(公告)号：US4823011A

公开(公告)日：1989-04-18

申请号：US50978

申请日：1987-05-15

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F9/00 ,  H01J37/304 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68

CPC classification number: H01J37/3045

Abstract: An apparatus and method for the fine alignment of a mask with a substrate in ion-projection lithography, e.g. for the production of integrated circuit chips, utilizes a multipole, an axial magnetic field generator and a scale controlling projection lens in the path of the beam. The mask is provided with markings which are imaged on the substrate and brought into registry with corresponding markings thereon utilizing pairs of detectors associated with each linear marking and responsive to secondary emission of the ion-beam marking projected on the substrate. All of the markings are straight lines.

Abstract translation: 用于在离子投影光刻中掩模与衬底精细对准的装置和方法，例如， 为了生产集成电路芯片，在光束的路径中利用多极，轴向磁场发生器和刻度控制投影透镜。 掩模具有标记，其被成像在基板上，并使用与每个线性标记相关联的检测器对并且响应于投影在基板上的离子束标记的二次发射而与其中的相应标记对准。 所有的标记都是直线。