公开(公告)号：US10311994B2

公开(公告)日：2019-06-04

申请号：US15118234

申请日：2015-12-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Qi Yao ,  Seongyeol Yoo ,  Shi Shu ,  Zhanfeng Cao ,  Wei Xu

IPC: H01B1/20 ,  C09D11/322 ,  C09D11/36 ,  C09D11/38 ,  C09D11/50 ,  C09D11/52 ,  C09K11/02 ,  C09K11/70 ,  C09K11/74 ,  C09K11/87 ,  C09K11/88 ,  H01L51/00 ,  H01L51/50 ,  H01L51/56

Abstract: A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

公开(公告)号：US10269596B2

公开(公告)日：2019-04-23

申请号：US15673688

申请日：2017-08-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Zhifu Li ,  Zhiyuan Ji ,  Jikai Yao

IPC: H01L21/68 ,  H01L21/67 ,  B25J9/16 ,  G06T1/00 ,  B08B7/00 ,  B65G43/00 ,  H01L23/00 ,  H01L25/075

Abstract: A transfer device with three transfer bases comprises: a first machine base that carries a substrate; and at least one transfer assembly that is located above the first machine base, wherein the at least one transfer assembly comprises: a second machine base that carries a target device; a third machine base that is located above the second machine base; and a transfer head that is disposed on the third machine base for acquiring the target device from the second machine base and transferring the target device to a prescribed location on the substrate. In this disclosure, since the transfer assembly is located above the first machine base, a path that the transfer head needs to move along to complete the transfer process is shorter, thereby improving the production efficiency.

公开(公告)号：US10115765B2

公开(公告)日：2018-10-30

申请号：US14909712

申请日：2015-08-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Zhanfeng Cao ,  Qi Yao ,  Zhengliang Li ,  Xiaolong He ,  Bin Zhang ,  Xiangchun Kong ,  Wei Zhang

IPC: H01L27/146 ,  G01T1/24

Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.

公开(公告)号：US10049612B2

公开(公告)日：2018-08-14

申请号：US14892521

申请日：2015-04-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Bin Zhang ,  Zhanfeng Cao ,  Xiangchun Kong ,  Qi Yao ,  Jincheng Gao ,  Zhengliang Li ,  Xiaolong He

IPC: G09G3/32 ,  G02B26/02 ,  H01L27/32 ,  H01L27/12 ,  G09G3/34

CPC classification number: G09G3/32 ,  G02B26/02 ,  G09G3/3433 ,  G09G2320/0646 ,  H01L27/1214 ,  H01L27/32

Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.

公开(公告)号：US09947886B2

公开(公告)日：2018-04-17

申请号：US15215104

申请日：2016-07-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shi Shu ,  Xiaolong He ,  Wei Xu ,  Chuanxiang Xu ,  Yonglian Qi

IPC: H01L51/50 ,  H01L51/00 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L51/502 ,  H01L27/3246 ,  H01L27/3262 ,  H01L51/0005 ,  H01L51/0007 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/56 ,  H01L2227/323

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

公开(公告)号：US09893140B2

公开(公告)日：2018-02-13

申请号：US14915934

申请日：2015-09-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Feng Zhang ,  Zhanfeng Cao ,  Shi Shu ,  Yaohui Gu ,  Wei Xu ,  Miki Kashima

IPC: H01L27/32 ,  H01L21/3213 ,  H01L21/308 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L27/3283 ,  H01L21/3083 ,  H01L21/3213 ,  H01L21/32139 ,  H01L51/0018 ,  H01L51/0023 ,  H01L51/56

Abstract: The present disclosure provides a display panel separation pillar and a method for manufacturing the same, a display panel and a display device. The display panel separation pillar includes a first material pattern and a second material pattern on the first material pattern. The first material pattern includes an upper surface and a lower surface opposite to each other, and a first separation lateral side and a second separation lateral side which are opposite to each other and between the upper surface and the lower surface. The second material pattern includes an upper surface and a lower surface opposite to each other. The upper surface of the first material pattern directly contacts with the lower surface of the second material pattern. Projections of the first separation lateral side and the second separation lateral side of the first material pattern onto a plane of the lower surface of the second material pattern are between edges of the lower surface of the second material pattern.

公开(公告)号：US09735194B2

公开(公告)日：2017-08-15

申请号：US15088177

申请日：2016-04-01

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Zhanfeng Cao ,  Xiangchun Kong ,  Qi Yao ,  Zhengliang Li ,  Bin Zhang ,  Xiaolong He

IPC: H01L27/146 ,  G01T1/20 ,  G01T1/24

CPC classification number: H01L27/14663 ,  G01T1/2018 ,  G01T1/241 ,  H01L27/14612

Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode. As a result, it is improved the quantum detection efficiency and the sensitivity of the X-ray flat panel detector.

公开(公告)号：US20170207240A1

公开(公告)日：2017-07-20

申请号：US15324296

申请日：2016-03-02

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong He ,  Yanbing Wu ,  Hong Wang ,  Seong Yeol Yoo

IPC: H01L27/12 ,  H01L25/18

CPC classification number: H01L27/124 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2001/13456 ,  G09F9/00 ,  G09G3/2092 ,  G09G2300/0426 ,  G09G2310/0264 ,  G09G2310/08 ,  H01L25/18

Abstract: The present disclosure provides an array substrate, a method for producing the same and a display apparatus. The array substrate has a display region and a driving circuit region adjacent to the display region, wherein the display region and the driving circuit region share a same base substrate; the driving circuit region includes a timer control register and/or a system on chip; wherein the timer control register is configured to achieve the timing control of the array substrate, the system on chip being configured to achieve the driving control of the array substrate.

公开(公告)号：US20170162612A1

公开(公告)日：2017-06-08

申请号：US15308991

申请日：2016-01-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qi Yao ,  Feng Zhang ,  Zhanfeng Cao ,  Xiaolong He ,  Bin Zhang ,  Zhengliang Li

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L27/1288 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; forming of the active layer, the source electrode and the drain electrode includes: sequentially forming an oxide semiconductor thin film and a source-drain electrode metal thin film on a base substrate, an entire surface of the oxide semiconductor thin film being in direct contact with the source-drain electrode metal thin film; and patterning the oxide semiconductor thin film and the source-drain electrode metal thin film with a dual-tone mask so as to form the active layer, the source electrode and the drain electrode by a single patterning process.

公开(公告)号：US09645688B2

公开(公告)日：2017-05-09

申请号：US14769094

申请日：2015-01-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qi Yao ,  Feng Zhang ,  Zhanfeng Cao ,  Zhen Liu ,  Xiaolong He

IPC: G06F3/044

CPC classification number: G06F3/044 ,  G06F2203/04103

Abstract: The present invention discloses a touch screen substrate and a method of manufacturing the same. The touch screen substrate includes a capacitance layer comprising a plurality of electrodes, a first cover layer formed on the capacitance layer; a plurality of conductive bridges located on the first cover layer and configured to be electrically connected to a part of the electrodes that are electrically isolated; and a plurality of electrical connection lines, configured to respectively be electrically connected to the respective conductive bridge so as to electrically connect the first electrode with a touch detecting circuit. A material layer for forming the electrical connection lines is different from a material layer for forming the conductive bridges such that the conductive bridges located below the electrical connection lines are not corroded when the material layer for the electrical connection lines is etched. Utilization of different chemical properties of copper and silver nanowires and ITO material and inclusion of a single patterning process increase productivity and yield.