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    Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
    43.
    发明申请
    Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same 失效
    可用作III族氮化物衬底的III族氮化物晶体及其制造方法和包括其的半导体器件

    公开(公告)号：US20040262630A1

    公开(公告)日：2004-12-30

    申请号：US10856467

    申请日：2004-05-27

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ,  Yusuke MORI

    发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

    IPC分类号： H01L031/0328 ,  H01L029/04 ,  H01L031/072 ,  H01L033/00

    CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02625 ,  H01L29/2003 ,  H01L29/66856

    摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured highly efficiently, and are useful and usable as a substrate that is used in semiconductor manufacturing processes. The method of manufacturing Group III nitride crystals includes: forming a first layer made of a semiconductor that is expressed by a composition formula of AlsGatIn1-s-tN (where 0nullsnull1, 0nulltnull1, and snulltnull1); forming a second layer by bringing the surface of the first layer into contact with a melt in an atmosphere including nitrogen, wherein the second layer includes greater defects in a crystal structure, such as a dislocation density for example, than those of the first layer, and the melt includes alkali metal and at least one Group III element selected from the group consisting of gallium, aluminum, and indium; and forming a third layer through crystal growth in the melt in an atmosphere including nitrogen, wherein the third layer is made of a semiconductor that is expressed by a composition formula of AluGavIn1-u-vN (where 0nullunull1, 0nullvnull1, and unullvnull1), and the third layer has less defects in a crystal structure, such as a dislocation density for example, than those of the second layer.

    摘要翻译： 本发明提供一种制造高品质的III族氮化物晶体的方法，其制造高效率，并且可用和用作半导体制造工艺中使用的基板。 制造III族氮化物晶体的方法包括：形成由AlsGatIn1-s-tN的组成式表示的半导体制成的第一层（其中0≤s≤1,0<= t <= 1，和 s + t <= 1）; 通过使第一层的表面在包括氮气的气氛中与熔体接触而形成第二层，其中第二层在诸如位错密度的晶体结构中具有比第一层更大的缺陷， 并且熔体包括碱金属和至少一种选自镓，铝和铟的III族元素; 并且在包括氮气的气氛中通过在熔体中的晶体生长形成第三层，其中第三层由以下组成式表示的半导体制成：AlluGavIn1-u-vN（其中0 <= u <= 1,0 <= v <= 1，u + v <= 1），并且第三层在诸如位错密度的晶体结构中具有比第二层更少的缺陷。

    Reagent, reagent kit and analyzing method
    45.
    发明授权
    Reagent, reagent kit and analyzing method 有权
    试剂，试剂盒和分析方法

    公开(公告)号：US08597952B2

    公开(公告)日：2013-12-03

    申请号：US13590843

    申请日：2012-08-21

    申请人： Yusuke Mori ,  Hiroki Takeshita

    发明人： Yusuke Mori ,  Hiroki Takeshita

    IPC分类号： G01N21/64 ,  G01N21/00

    CPC分类号： G01N33/86 ,  Y10T436/10 ,  Y10T436/101666 ,  Y10T436/107497

    摘要： A method for analyzing platelets is described. In the method, a measurement sample is prepared by mixing a sample and a dye for staining platelets. The dye is selected from the group consisting of Capri blue, Nile blue and brilliant cresyl blue. Upon irradiating cells in the measurement sample with light, scattered light and fluorescence emitted from the cells are measured. The platelets are detected on the basis of the scattered light and the fluorescence. A reagent kit and a reagent are also described.

    摘要翻译： 描述了分析血小板的方法。 在该方法中，通过混合样品和用于染色血小板的染料来制备测量样品。 染料选自卡普兰蓝，尼罗河蓝和亮丽甲酚蓝。 当用光照射测量样品中的细胞时，测量从细胞发射的散射光和荧光。 基于散射光和荧光检测血小板。 还描述了试剂盒和试剂。

    Method for growing single crystal of group III metal nitride and reaction vessel for use in same
    47.
    发明授权
    Method for growing single crystal of group III metal nitride and reaction vessel for use in same 有权
    用于生长III族金属氮化物的单晶的方法和用于其的反应容器

    公开(公告)号：US08568532B2

    公开(公告)日：2013-10-29

    申请号：US13315871

    申请日：2011-12-09

    申请人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

    发明人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

    IPC分类号： C30B19/06

    CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B35/002

    摘要： Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

    摘要翻译： 属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中， 向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。 反应容器包括容纳坩埚和盖的主体。 主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。 盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

    Method for producing group III nitride-based compound semiconductor crystal
    50.
    发明授权
    Method for producing group III nitride-based compound semiconductor crystal 有权
    制备III族氮化物基化合物半导体晶体的方法

    公开(公告)号：US08227324B2

    公开(公告)日：2012-07-24

    申请号：US12448207

    申请日：2007-12-10

    申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： H01L21/20

    CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625

    摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.

    摘要翻译： 在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。 因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。 当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解 在助焊剂混合物中。