公开(公告)号：US20040262630A1

公开(公告)日：2004-12-30

申请号：US10856467

申请日：2004-05-27

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ,  Yusuke MORI

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

IPC分类号： H01L031/0328 ,  H01L029/04 ,  H01L031/072 ,  H01L033/00

CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02625 ,  H01L29/2003 ,  H01L29/66856

摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured highly efficiently, and are useful and usable as a substrate that is used in semiconductor manufacturing processes. The method of manufacturing Group III nitride crystals includes: forming a first layer made of a semiconductor that is expressed by a composition formula of AlsGatIn1-s-tN (where 0nullsnull1, 0nulltnull1, and snulltnull1); forming a second layer by bringing the surface of the first layer into contact with a melt in an atmosphere including nitrogen, wherein the second layer includes greater defects in a crystal structure, such as a dislocation density for example, than those of the first layer, and the melt includes alkali metal and at least one Group III element selected from the group consisting of gallium, aluminum, and indium; and forming a third layer through crystal growth in the melt in an atmosphere including nitrogen, wherein the third layer is made of a semiconductor that is expressed by a composition formula of AluGavIn1-u-vN (where 0nullunull1, 0nullvnull1, and unullvnull1), and the third layer has less defects in a crystal structure, such as a dislocation density for example, than those of the second layer.

摘要翻译： 本发明提供一种制造高品质的III族氮化物晶体的方法，其制造高效率，并且可用和用作半导体制造工艺中使用的基板。 制造III族氮化物晶体的方法包括：形成由AlsGatIn1-s-tN的组成式表示的半导体制成的第一层（其中0≤s≤1,0<= t <= 1，和 s + t <= 1）; 通过使第一层的表面在包括氮气的气氛中与熔体接触而形成第二层，其中第二层在诸如位错密度的晶体结构中具有比第一层更大的缺陷， 并且熔体包括碱金属和至少一种选自镓，铝和铟的III族元素; 并且在包括氮气的气氛中通过在熔体中的晶体生长形成第三层，其中第三层由以下组成式表示的半导体制成：AlluGavIn1-u-vN（其中0 <= u <= 1,0 <= v <= 1，u + v <= 1），并且第三层在诸如位错密度的晶体结构中具有比第二层更少的缺陷。

公开(公告)号：US20040183090A1

公开(公告)日：2004-09-23

申请号：US10804610

申请日：2004-03-18

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ,  Yusuke MORI

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Akihiko Ishibashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L033/00

CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02642 ,  H01S5/0213 ,  H01S5/32341

摘要： The present invention provides a manufacturing method that allows a Group III nitride substrate with a low dislocation density to be manufactured, and a semiconductor device that is manufactured using the manufacturing method. The manufacturing method includes, in an atmosphere including nitrogen, allowing a Group III element and the nitrogen to react with each other in an alkali metal melt to cause generation and growth of Group III nitride crystals. In the manufacturing method, a plurality of portions of a Group III nitride semiconductor layer are prepared, selected as seed crystals, and used for at least one of the generation and the growth of the Group III nitride crystals, and then surfaces of the seed crystals are brought into contact with the alkali metal melt.

摘要翻译： 本发明提供了制造能够制造具有低位错密度的III族氮化物衬底的制造方法和使用该制造方法制造的半导体器件。 制造方法在包括氮的气氛中包括使III族元素和氮在碱金属熔体中彼此反应以引起III族氮化物晶体的产生和生长。 在制造方法中，制备III族氮化物半导体层的多个部分，选择晶种，并用于III族氮化物晶体的生成和生长中的至少一个，然后将晶种的表面 与碱金属熔体接触。

公开(公告)号：US20040250747A1

公开(公告)日：2004-12-16

申请号：US10809033

申请日：2004-03-25

申请人： ,  MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masashi Yoshimura ,  Yasunori Kai ,  Mamoru Imade ,  Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi

IPC分类号： C30B001/00 ,  C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B23/02 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5null1.013null105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

摘要翻译： 本发明提供一种制造氮化镓单晶的方法，其可以抑制氮化镓的分解并提高升华方法中的生产效率。 根据制造方法，将用于氮化镓（GaN）单晶的材料（GaN粉末）放置在坩埚内部，通过加热升华或蒸发，并在衬底表面上冷却以再次返回到固体，使得镓 氮化物单晶生长在衬底表面上。 单晶的生长在压力下进行。 压力优选为5atm以上（5×1.013×10 5 Pa）。 单晶优选在含有NH 3和N 2的混合气体气氛中生长。