发明申请
US20040262630A1 Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
失效
可用作III族氮化物衬底的III族氮化物晶体及其制造方法和包括其的半导体器件
- 专利标题: Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
- 专利标题(中): 可用作III族氮化物衬底的III族氮化物晶体及其制造方法和包括其的半导体器件
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申请号: US10856467申请日: 2004-05-27
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公开(公告)号: US20040262630A1公开(公告)日: 2004-12-30
- 发明人: Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Masanori Morishita
- 申请人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , Yusuke MORI
- 申请人地址: JP Kadoma-shi JP Katano-shi
- 专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.,Yusuke MORI
- 当前专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.,Yusuke MORI
- 当前专利权人地址: JP Kadoma-shi JP Katano-shi
- 优先权: JP2003-153237 20030529; JP2003-306914 20030829; JP2004-087743 20040324
- 主分类号: H01L031/0328
- IPC分类号: H01L031/0328 ; H01L029/04 ; H01L031/072 ; H01L033/00
摘要:
The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured highly efficiently, and are useful and usable as a substrate that is used in semiconductor manufacturing processes. The method of manufacturing Group III nitride crystals includes: forming a first layer made of a semiconductor that is expressed by a composition formula of AlsGatIn1-s-tN (where 0nullsnull1, 0nulltnull1, and snulltnull1); forming a second layer by bringing the surface of the first layer into contact with a melt in an atmosphere including nitrogen, wherein the second layer includes greater defects in a crystal structure, such as a dislocation density for example, than those of the first layer, and the melt includes alkali metal and at least one Group III element selected from the group consisting of gallium, aluminum, and indium; and forming a third layer through crystal growth in the melt in an atmosphere including nitrogen, wherein the third layer is made of a semiconductor that is expressed by a composition formula of AluGavIn1-u-vN (where 0nullunull1, 0nullvnull1, and unullvnull1), and the third layer has less defects in a crystal structure, such as a dislocation density for example, than those of the second layer.
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