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    MAGNETIC FIELD ASSISTED STRAM CELLS
    42.
    发明申请
    MAGNETIC FIELD ASSISTED STRAM CELLS 失效
    磁场辅助细胞

    公开(公告)号：US20120250405A1

    公开(公告)日：2012-10-04

    申请号：US13491891

    申请日：2012-06-08

    Applicant: Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    Inventor： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    IPC: G11C11/16 ,  G11C11/14

    CPC classification number: G11C11/1675 ,  G11C11/1659

    Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

    Abstract translation: 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

    THERMALLY ASSISTED MULTI-BIT MRAM
    43.
    发明申请
    THERMALLY ASSISTED MULTI-BIT MRAM 有权
    热辅助多位MRAM

    公开(公告)号：US20120230092A1

    公开(公告)日：2012-09-13

    申请号：US13474838

    申请日：2012-05-18

    Applicant: Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

    Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

    IPC: G11C11/15

    CPC classification number: G11C11/15 ,  G11C11/1675 ,  G11C11/5607

    Abstract: Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

    Abstract translation: 描述写入多位MRAM存储器单元的方法。 该方法包括对多位（即多级）热辅助MRAM进行自检测写入。 自检的写入会增加数据状态级之间的读取余量，并降低由于单元格电阻变化而导致的读取边缘变化。

    Non-volatile programmable logic gates and adders
    45.
    发明授权
    Non-volatile programmable logic gates and adders 有权
    非易失性可编程逻辑门和加法器

    公开(公告)号：US08179716B2

    公开(公告)日：2012-05-15

    申请号：US12953544

    申请日：2010-11-24

    Applicant: Haiwen Xi ,  Yang Li ,  Song S. Xue

    Inventor： Haiwen Xi ,  Yang Li ,  Song S. Xue

    IPC: G11C11/00

    CPC classification number: H03K19/173 ,  G11C11/161 ,  G11C11/1673

    Abstract: Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.

    Abstract translation: 具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。 通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。 输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。 输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。 在一些实施例中，输出元件可以具有多于一个的自由层。

    NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION
    46.
    发明申请
    NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION 有权
    非易失性存储器，带有磁场补偿

    公开(公告)号：US20120081951A1

    公开(公告)日：2012-04-05

    申请号：US13316972

    申请日：2011-12-12

    Applicant: Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

    Inventor： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

    IPC: G11C11/00

    CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

    Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

    Abstract translation: 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

    Spin-torque probe microscope
    47.
    发明授权
    Spin-torque probe microscope 有权
    旋转力矩探头显微镜

    公开(公告)号：US08069492B2

    公开(公告)日：2011-11-29

    申请号：US12059407

    申请日：2008-03-31

    Applicant: Haiwen Xi ,  Song S. Xue

    Inventor： Haiwen Xi ,  Song S. Xue

    IPC: G01Q60/08

    CPC classification number: G01Q60/52 ,  G01N24/10 ,  G01R33/323

    Abstract: A spin-torque probe microscope and methods of using the same are described. The spin-torque probe microscope includes a cantilever probe body, a magnetic tip disposed at a distal end of the cantilever probe body, an electrically conductive sample disposed proximate to the magnetic tip, an electrical circuit providing a spin-polarized electron current to the electrically conductive sample, and a vibration detection element configured to sense vibration frequency of the cantilever probe body. The spin-polarized electron current is sufficient to alter a local electron spin or magnetic moment within the electrically conductive sample and be sensed by the magnetic tip.

    Abstract translation: 描述了自旋扭矩探针显微镜及其使用方法。 旋转扭矩探针显微镜包括悬臂探针体，设置在悬臂探头主体的远端的磁尖，靠近磁尖设置的导电样品，向电气提供自旋极化电子电流的电路 导电样品和被配置为感测悬臂探针体的振动频率的振动检测元件。 自旋极化电子电流足以改变导电样品内的局部电子自旋或磁矩，并由磁尖检测。

    Multi-terminal resistance device
    48.
    发明授权
    Multi-terminal resistance device 有权
    多端电阻设备

    公开(公告)号：US08004874B2

    公开(公告)日：2011-08-23

    申请号：US12412644

    申请日：2009-03-27

    Applicant: Haiwen Xi ,  Kaizhong Gao ,  Song Xue

    Inventor： Haiwen Xi ,  Kaizhong Gao ,  Song Xue

    IPC: G11C11/00 ,  G11C43/02

    CPC classification number: G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/76 ,  H01L45/04 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147

    Abstract: Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.

    Abstract translation: 本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。 可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。 在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。 该设备可以包括共享的第四电极以提供额外的编程能力。 在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

    Static magnetic field assisted resistive sense element
    49.
    发明授权
    Static magnetic field assisted resistive sense element 有权
    静磁场辅助电阻感应元件

    公开(公告)号：US07999337B2

    公开(公告)日：2011-08-16

    申请号：US12501902

    申请日：2009-07-13

    Applicant: Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

    Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

    IPC: H01L29/82

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

    Abstract translation: 用于将数据写入非易失性存储单元的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）具有热辅助区域，磁性隧道结（MTJ）和固定区域。 当以旋转极化电流将第一逻辑状态写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

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