公开(公告)号：US10692749B2

公开(公告)日：2020-06-23

申请号：US15831972

申请日：2017-12-05

Applicant: Axcelis Technologies, Inc.

Inventor： Edward K. McIntyre ,  William P. Reynolds

IPC: H01L21/683 ,  H02N13/00 ,  G01R19/14 ,  G01R22/10 ,  H01L21/67 ,  H01L21/687

Abstract: An electrostatic clamp monitoring system has an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface associated therewith via one or more electrodes. A power supply is electrically coupled to the electrostatic clamp and configured to selectively supply a clamping voltage at a clamping frequency to the electrostatic clamp. A data acquisition system measures a current supplied to the one or more electrodes, and a controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. The controller is further configured to selectively vary one or more of the clamping voltage and clamping frequency based on the determined charge value, thereby maintaining a desired clamping force between the workpiece and electrostatic clamp.

公开(公告)号：US10580616B2

公开(公告)日：2020-03-03

申请号：US16152439

申请日：2018-10-05

Applicant: Axcelis Technologies, Inc.

Inventor： Teng-Chao David Tao ,  David Allen Kirkwood

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/305 ,  H01J37/05

Abstract: An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes.

公开(公告)号：US20200066570A1

公开(公告)日：2020-02-27

申请号：US16549239

申请日：2019-08-23

Applicant: Axcelis Technologies, Inc.

Inventor： John Baggett ,  Dave Shaner

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: A workpiece support has a support surface where one or more standoffs are selectively removably coupled to the support surface. The one or more standoffs are operable to support a workpiece at a predetermined standoff distance from the support surface. A gap may be defined between the support surface and the workpiece. The one or more standoffs may be an electrically insulative film, such as a polyimide film that is selectively removably coupled to the support surface by an adhesive. The workpiece support may be an electrostatic chuck (ESC). Electrodes positioned below the support surface may electrostatically attract the workpiece toward the support, where a gas may be introduced in the gap.

公开(公告)号：US10573485B1

公开(公告)日：2020-02-25

申请号：US16227296

申请日：2018-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Edward Eisner ,  Bo Vanderberg ,  Neil Bassom ,  Michael Cristoforo ,  Joshua Abeshaus

IPC: H01J37/08 ,  H01J37/317

Abstract: An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.

公开(公告)号：US10342114B2

公开(公告)日：2019-07-02

申请号：US16124676

申请日：2018-09-07

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: H05H5/08 ,  H05H7/18 ,  C23C14/48 ,  H01J37/24 ,  H01J37/317

Abstract: An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.

公开(公告)号：US20180346342A1

公开(公告)日：2018-12-06

申请号：US15995707

申请日：2018-06-01

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh ,  Neil Basson

IPC: C01F7/48 ,  C01B7/13 ,  C23C16/12 ,  C23C14/48 ,  C23C16/448 ,  H01J37/317 ,  H01L21/02 ,  H01L21/265 ,  H01J37/08 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.

公开(公告)号：US20180233367A1

公开(公告)日：2018-08-16

申请号：US15951495

申请日：2018-04-12

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01J37/20 ,  C23C14/54 ,  H01L21/67 ,  C23C14/48 ,  H01L21/677 ,  H01J37/317

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US10037877B1

公开(公告)日：2018-07-31

申请号：US15637538

申请日：2017-06-29

Applicant: Axcelis Technologies, Inc.

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: A61N5/00 ,  H01J49/20 ,  H01J49/12 ,  H01J49/06

CPC classification number: H01J49/20 ,  H01J37/05 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/061 ,  H01J49/126 ,  H01J49/30 ,  H01J2237/15

Abstract: An ion implantation system has an ion source forming an ion beam. An mass analyzer defines and varies a mass analyzed beam along a beam path. A moveable mass resolving aperture assembly has a resolving aperture whose position is selectively varied in response to the variation of the beam path by the mass analyzer. A deflecting deceleration element positioned selectively deflects the beam path and selectively decelerate the mass analyzed beam. A controller selectively operates the ion implantation system in both a drift mode and decel mode. The controller passes the mass analyzed beam along a first path through the resolving aperture without deflection or deceleration in the drift mode and deflects and decelerates the beam along a second path in the decel mode. The position of the resolving aperture is selectively varied based on the variation in the beam path through the mass analyzer and the deflecting deceleration element.

公开(公告)号：US20180151407A1

公开(公告)日：2018-05-31

申请号：US15361813

申请日：2016-11-28

Applicant: Axcelis Technologies, Inc.

Inventor： Stanley W. Stone

IPC: H01L21/687 ,  H05B3/00 ,  H01L21/67

CPC classification number: H01L21/67115 ,  H01L21/67259 ,  H01L21/68728

Abstract: A workpiece clamp has a base with first and second sides with a cam ring rotatably coupled to the first side. The cam ring has plurality of cam slots. An actuator selectively rotates the cam ring with respect to the base. A plurality of rotary clamps, have respective shafts, cam followers assemblies, and workpiece engagement members, where the shaft extends through the base from the first to second side and rotate about an axis. The shaft has individually rotatable first and second members. The cam follower assemblies couple first and second portions of the shaft, where a cam follower is radially offset from the shaft axis and configured to engage a respective cam slot. The workpiece engagement member has a gripper member that is radially offset from the shaft axis and is configured to engage a workpiece based on a position of the cam follower in the respective cam slots. Sensors are positioned on the first side of the base, wherein each sensor detects a rotational position of the first and second members, thus determining a clamping state of each rotary clamp.

公开(公告)号：US09978555B2

公开(公告)日：2018-05-22

申请号：US15344502

申请日：2016-11-04

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08 ,  H01J37/317 ,  H01J27/02

CPC classification number: H01J37/08 ,  H01J27/022 ,  H01J37/3171 ,  H01J2237/31705

Abstract: An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap.