公开(公告)号：US20100159707A1

公开(公告)日：2010-06-24

申请号：US12716918

申请日：2010-03-03

申请人： Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

发明人： Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

IPC分类号： H01L21/3065 ,  H01L21/312

CPC分类号： C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

摘要翻译： 提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。 气体分配系统可以包括气体供应部分，流量控制部分和切换部分。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

公开(公告)号：US07700032B1

公开(公告)日：2010-04-20

申请号：US12172366

申请日：2008-07-14

申请人： Ryan P. Lu ,  Ayax D. Ramirez ,  Ozzie Csanadi ,  Stephen D. Russell

发明人： Ryan P. Lu ,  Ayax D. Ramirez ,  Ozzie Csanadi ,  Stephen D. Russell

IPC分类号： B23K26/00 ,  H01L21/312

CPC分类号： B23K26/147 ,  B23K26/0624 ,  B23K26/361 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56

摘要： A laser ablation process is applied to a semiconductor substrate causing the semiconductor material surface and subsurface to be superheated to the point where material is ablated from the material substrate. Optional subsequent laser pulse(s) liquefy the particles, preferably while suspended in air, and the material surface tension causes the liquefied droplet of semiconductor material to form a sphere. The droplet preferably solidifies in air before reaching the substrate of its origin or another substrate for collection.

摘要翻译： 将激光烧蚀工艺应用于半导体衬底，使半导体材料表面和次表面过热到材料从材料衬底上烧蚀的点。 可选的后续激光脉冲优选在悬浮在空气中的情况下液化颗粒，并且材料表面张力导致液化的半导体材料液滴形成球体。 液滴优选在到达其原点的基底或用于收集的另一基底之前在空气中固化。

公开(公告)号：US20100093187A1

公开(公告)日：2010-04-15

申请号：US12577455

申请日：2009-10-12

申请人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

发明人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

IPC分类号： H01L21/312

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/3141

摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.

摘要翻译： 提供了在基板上沉积无定形碳层的方法和装置。 在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入到处理室中，引入等离子体引发气体，所述等离子体引发气体选自 氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成 基底上的共形无定形碳层。

公开(公告)号：US20100009541A1

公开(公告)日：2010-01-14

申请号：US12419881

申请日：2009-04-07

申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

IPC分类号： H01L21/306 ,  B29C59/02 ,  B44C1/22 ,  G03F1/00 ,  H01L21/312

CPC分类号： H01L21/0272 ,  B81C1/00031 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

摘要翻译： 根据本发明，通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下，软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。

公开(公告)号：US20090269942A1

公开(公告)日：2009-10-29

申请号：US12458009

申请日：2009-06-29

申请人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

发明人： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

IPC分类号： H01L21/312 ,  C07F7/21

CPC分类号： C07F7/21 ,  Y10T428/31663

摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

摘要翻译： 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。

公开(公告)号：US07605006B2

公开(公告)日：2009-10-20

申请号：US11331426

申请日：2006-01-11

申请人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

发明人： Makoto Morijiri ,  Haruko Tanaka ,  Junichi Tanabe

IPC分类号： G11B5/39 ,  H01L21/312 ,  H01L21/00 ,  G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/398

摘要： In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off. According to one embodiment of the invention, a method of manufacturing a thin film magnetic head of using a resist pattern comprises three-layered organic films of a PMGI layer, an organic film layer and an image layer from the lower layer as a lift-off resist pattern, etching the organic film layer and the PMGI layer by using the imaging layer as a mask, then etching a GMR layer by using, as a mask, a lift-off resist pattern in which the organic film layer and the imaging layer are formed into the overhang shape prepared by etching the PMGI layer in a developer solution, and then forming a magnetic domain control film and an electrode film on both ends of the GMR layer by using a lift-off method.

摘要翻译： 在形成窄图案时，难以形成具有突出形状的剥离抗蚀剂图案。 因此，导致GMR层的端部的角度降低到45°以下的现象。 需要提供形成GMR膜的端部的剥离抗蚀剂图形，其形成为突然为45°以上的角度并确保剥离。 根据本发明的一个实施例，制造使用抗蚀剂图案的薄膜磁头的方法包括作为剥离的PMGI层，有机膜层和来自下层的图像层的三层有机膜 通过使用成像层作为掩模蚀刻有机膜层和PMGI层，然后通过使用有机膜层和成像层的剥离抗蚀剂图案作为掩模蚀刻GMR层， 形成为通过在显影剂溶液中蚀刻PMGI层制备的突出形状，然后通过剥离法在GMR层的两端上形成磁畴控制膜和电极膜。

公开(公告)号：US20090215222A1

公开(公告)日：2009-08-27

申请号：US12320201

申请日：2009-01-21

申请人： Tadashi Arai ,  Shinichi Saito

发明人： Tadashi Arai ,  Shinichi Saito

IPC分类号： H01L51/40 ,  H01L21/312

CPC分类号： H01L51/0023 ,  H01L27/1225 ,  H01L29/7869 ,  H01L51/0545

摘要： When a thin film transistor is manufactured by using a printing method, the precision of alignment between a first electrode and a second electrode becomes a problem. If it is manufactured by using photolithography, a photomask for each layer is necessary, resulting in the cost being increased. The essence of the present invention is that not only processing the gate shape is carried out over the substrate by using a resist pattern formed by exposing using a photo-mask for the gate pattern but also processing the source-drain electrodes is carried out by lifting-off. As a result, alignment between the source-drain electrode and the gate electrode is carried out.

摘要翻译： 当通过使用印刷方法制造薄膜晶体管时，第一电极和第二电极之间的对准精度成为问题。 如果通过使用光刻法制造，则需要每层的光掩模，导致成本增加。 本发明的精髓在于，通过使用通过使用用于栅极图案的光掩模进行曝光而形成的抗蚀剂图案，不仅处理栅极形状，而且通过提升来进行源极 - 漏极处理 -off。 结果，进行源极 - 漏极电极和栅电极之间的对准。

公开(公告)号：US20080119058A1

公开(公告)日：2008-05-22

申请号：US11562021

申请日：2006-11-21

申请人： DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

发明人： DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/312

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。

公开(公告)号：US07358199B2

公开(公告)日：2008-04-15

申请号：US11160107

申请日：2005-06-09

申请人： I-Wen Wu ,  Chen-Chiu Tseng

发明人： I-Wen Wu ,  Chen-Chiu Tseng

IPC分类号： H01L21/47 ,  H01L21/312 ,  B05D5/12 ,  B05D3/12

CPC分类号： H01L21/02282 ,  G01N21/9501 ,  H01L21/312 ,  H01L22/12

摘要： A method of fabricating semiconductor integrated circuits includes (1) providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto the wafer, and a detector fixed in a position above the wafer, wherein the wafer has a radius R; (2) spin-on coating the wafer by depositing the spin-on solution onto surface of the wafer from its center and spinning-off to leave a spin coat material layer; and (3) spinning the wafer and scanning the spin coat material layer by impinging an incident light beam emanated from the fixed detector and detecting a reflected light beam.

摘要翻译： 一种制造半导体集成电路的方法包括（1）提供一种旋转工具，其包括用于保持和旋转设置在其上的晶片的可旋转压板，用于在晶片上提供旋转溶液的流体供应系统，以及固定在 位于晶片上方，其中晶片具有半径R; （2）通过从其中心将旋涂溶液沉积在晶片的表面上并旋转以离开旋涂层材料来旋涂晶片; 和（3）旋转晶片并通过照射从固定检测器发出的入射光束并检测反射光束来扫描旋涂层。

公开(公告)号：US07335600B2

公开(公告)日：2008-02-26

申请号：US11014395

申请日：2004-12-15

申请人： Wen-Sheng Chien ,  Yen-Wu Hsieh

发明人： Wen-Sheng Chien ,  Yen-Wu Hsieh

IPC分类号： H01L21/312

CPC分类号： H01L21/02071 ,  H01L21/02063

摘要： A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides sufficient energy for the extra electrons caused by the ashing process to escape from the substrate, and the remaining photoresist and polymer are stripped with stripping solvents after the surface treatment.

摘要翻译： 描述了去除光致抗蚀剂的方法。 提供具有要去除其上的光致抗蚀剂的基板，然后进行灰化处理以去除大部分光致抗蚀剂。 然后对基板进行表面处理，为由灰化过程引起的额外电子提供足够的能量以从基板逸出，并且在表面处理之后用剥离溶剂剥离剩余的光致抗蚀剂和聚合物。