Process for adjusting the size and shape of nanostructures
    1.
    发明授权
    Process for adjusting the size and shape of nanostructures 有权
    调整纳米结构尺寸和形状的工艺

    公开(公告)号:US08163656B2

    公开(公告)日:2012-04-24

    申请号:US12419881

    申请日:2009-04-07

    IPC分类号: H01L21/477

    摘要: In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译: 根据本发明,通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下,软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。

    Process for Adjusting the Size and Shape of Nanostructures
    2.
    发明申请
    Process for Adjusting the Size and Shape of Nanostructures 有权
    调整纳米结构尺寸和形状的工艺

    公开(公告)号:US20100009541A1

    公开(公告)日:2010-01-14

    申请号:US12419881

    申请日:2009-04-07

    摘要: In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译: 根据本发明,通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下,软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。

    Process for adjusting the size and shape of nanostructures

    公开(公告)号:US08163657B2

    公开(公告)日:2012-04-24

    申请号:US12435219

    申请日:2009-05-04

    IPC分类号: H01L21/477

    摘要: In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    PROCESS FOR ADJUSTING THE SIZE AND SHAPE OF NANOSTRUCTURES
    4.
    发明申请
    PROCESS FOR ADJUSTING THE SIZE AND SHAPE OF NANOSTRUCTURES 有权
    调整纳米尺寸和形状的过程

    公开(公告)号:US20100081282A1

    公开(公告)日:2010-04-01

    申请号:US12435219

    申请日:2009-05-04

    摘要: In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

    摘要翻译: 根据本发明,通过为装置提供软或软化的暴露表面的步骤来减小或调节微量元件在基片上的横向尺寸; 将引导板放置在软或软化的暴露表面附近; 并将引导板压在暴露的表面上。 在压力下,软材料在导向板和基板之间横向流动。 这种压力诱导的流动可以减小线间距的横向尺寸或孔的尺寸并增加台面的尺寸。 相同的过程也可以修复诸如线边缘粗糙度和倾斜侧壁的缺陷。 该方法在本文中将被称为通过液化或P-SPEL的压制自我完善。