发明申请
- 专利标题: Process for Adjusting the Size and Shape of Nanostructures
- 专利标题(中): 调整纳米结构尺寸和形状的工艺
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申请号: US12419881申请日: 2009-04-07
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公开(公告)号: US20100009541A1公开(公告)日: 2010-01-14
- 发明人: Stephen Y. Chou , Ying Wang , Xiaogan Liang , Yixing Liang
- 申请人: Stephen Y. Chou , Ying Wang , Xiaogan Liang , Yixing Liang
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; B29C59/02 ; B44C1/22 ; G03F1/00 ; H01L21/312
摘要:
In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.
公开/授权文献
- US08163656B2 Process for adjusting the size and shape of nanostructures 公开/授权日:2012-04-24
信息查询
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