公开(公告)号：US07700032B1

公开(公告)日：2010-04-20

申请号：US12172366

申请日：2008-07-14

申请人： Ryan P. Lu ,  Ayax D. Ramirez ,  Ozzie Csanadi ,  Stephen D. Russell

发明人： Ryan P. Lu ,  Ayax D. Ramirez ,  Ozzie Csanadi ,  Stephen D. Russell

IPC分类号： B23K26/00 ,  H01L21/312

CPC分类号： B23K26/147 ,  B23K26/0624 ,  B23K26/361 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56

摘要： A laser ablation process is applied to a semiconductor substrate causing the semiconductor material surface and subsurface to be superheated to the point where material is ablated from the material substrate. Optional subsequent laser pulse(s) liquefy the particles, preferably while suspended in air, and the material surface tension causes the liquefied droplet of semiconductor material to form a sphere. The droplet preferably solidifies in air before reaching the substrate of its origin or another substrate for collection.

摘要翻译： 将激光烧蚀工艺应用于半导体衬底，使半导体材料表面和次表面过热到材料从材料衬底上烧蚀的点。 可选的后续激光脉冲优选在悬浮在空气中的情况下液化颗粒，并且材料表面张力导致液化的半导体材料液滴形成球体。 液滴优选在到达其原点的基底或用于收集的另一基底之前在空气中固化。