公开(公告)号：US4281030A

公开(公告)日：1981-07-28

申请号：US149234

申请日：1980-05-12

申请人： William T. Silfvast

发明人： William T. Silfvast

IPC分类号： H01L21/203 ,  C23C14/02 ,  C23C14/28 ,  C23C14/48 ,  C23C26/00 ,  C30B1/02 ,  C30B31/22 ,  H01L21/20 ,  H01L21/223 ,  H01L21/26 ,  H01L21/268 ,  C23C13/00 ,  C23C13/12

CPC分类号： C30B31/22 ,  C23C14/022 ,  C23C14/48 ,  C30B1/02 ,  C30B29/06

摘要： Implantation of a particle flux (200), for example a laser produced particle flux, upon a substrate (5) is enhanced by premelting the substrate surface with a beam of radiation (110) from a pulsed high energy source (2) such as a laser source. The premelting is provided prior to the arrival of the particle flux in order that the particle flux impinge upon an area of the substrate which is melted.

摘要翻译： 通过用来自脉冲高能量源（2）的辐射束（110）预处理衬底表面，将衬底（5）上的粒子通量（200），例如激光产生的粒子通量的植入被增强， 激光源。 在颗粒通量到达之前提供预熔化，以使颗粒通量撞击熔融的基底的区域。

公开(公告)号：US4223048A

公开(公告)日：1980-09-16

申请号：US931565

申请日：1978-08-07

申请人： George M. Engle, Jr.

发明人： George M. Engle, Jr.

IPC分类号： B65G49/07 ,  C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  C23C13/12 ,  B05D5/12 ,  H01L21/443

CPC分类号： H01L21/67069 ,  C23C16/509 ,  H01J37/32431

摘要： Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system. The processing system includes an evacuable horizontal tubular envelope disposed within a surrounding heater or furnace for maintaining, the case of deposition, a region of uniform temperature within the central region of the elongated tubular envelope. Two sets of interleaved generally planar electrodes are disposed within the evacuable envelope for establishing an electrical plasma discharge in the process gaps defined between the interleaved electrodes. Wafers are loaded into the processing gaps vertically with the major face of each wafer facing into the process gap. The mutually opposed surfaces of the interleaved electrodes are preferably lined with a material of the same conductivity as that of the bulk material of the wafer to enhance the uniformity of the processing. The chemical vapor is caused to flow axially through the evacuable tube, and through the electrical plasma discharge established in the processing gaps at subatmospheric pressure, to produce chemically active vapor products of the plasma discharge which interact with the faces of the wafers facing into the processing gaps for processing of the wafers.

摘要翻译： 通过等离子体增强化学气相处理系统处理半导体晶片，即蚀刻或沉积在其上的层。 处理系统包括设置在周围加热器或炉内的可抽空的水平管状容器，用于在细长的管状外壳的中心区域内保持均匀温度的区域。 两组交错的大体上平面的电极设置在可抽真空的外壳内，用于在交错的电极间限定的工艺间隙内建立电等离子体放电。 将晶片垂直地装载到处理间隙中，每个晶片的主面面向工艺间隙。 交错电极的相互相对的表面优选地衬有与晶片的散装材料相同导电性的材料，以增强处理的均匀性。 导致化学气体轴向流过可抽空的管，并通过在低于大气压的处理间隙中建立的电离子放电，以产生等离子体放电的化学活性蒸气产物，其与面向加工的晶片的面相互作用 用于处理晶片的间隙。

公开(公告)号：US4197814A

公开(公告)日：1980-04-15

申请号：US870096

申请日：1978-01-17

申请人： Toshinori Takagi ,  Kiyoshi Morimoto

发明人： Toshinori Takagi ,  Kiyoshi Morimoto

IPC分类号： C23C14/22 ,  C30B23/08 ,  C30B25/06 ,  H01L21/203 ,  H01L21/208 ,  H01L21/363 ,  H01L31/04 ,  H01L33/02 ,  C23C13/12

CPC分类号： C23C14/221 ,  C30B23/08 ,  H01L21/02521 ,  H01L21/02631

摘要： An apparatus for forming compound semiconductors, which has a plurality of closed type crucibles for separately holding and vaporizing the component elements of a desired compound semiconductor thin-film, the crucibles each having at least one injection nozzle, a plurality of temperature control sections for separately controlling vapor pressures inside the crucibles so that the vapors jetted from the injection nozzles of the crucibles may form clusters, a plurality of ionization chambers provided in the vicinity of the injection nozzles of the crucibles respectively for ionizing the clusters, and acceleration power supplies provided between a substrate and the ionization chambers for giving kinetic energy to the cluster ions to make them impinge on the surface of the substrate so as to form a thin film thereon.

摘要翻译： 一种用于形成化合物半导体的装置，其具有多个封闭型坩埚，用于分别保持和蒸发所需化合物半导体薄膜的组分元素，所述坩埚各自具有至少一个注射喷嘴，多个温度控制部分用于分别 控制坩埚内的蒸汽压，使得从坩埚的喷嘴喷射的蒸汽可以形成簇，分别设置在坩埚的喷嘴附近的多个离子化室，用于电离簇，加速电源 衬底和电离室，用​​于向簇离子提供动能，使它们撞击到衬底的表面上，以便在其上形成薄膜。

公开(公告)号：US4197175A

公开(公告)日：1980-04-08

申请号：US909807

申请日：1978-05-26

申请人： Eberhard Moll ,  Helmut Daxinger

发明人： Eberhard Moll ,  Helmut Daxinger

IPC分类号： C23C14/30 ,  C23C13/12 ,  C23C15/00

CPC分类号： C23C14/30

摘要： A method and apparatus for evaporating materials in a vacuum evaporator by bombarding a material to be evaporated with electrons generated by a low voltage arc discharge sustained between a hot cathode and an anode comprising, locating the hot cathode in a chamber which is separated from an evaporation chamber wherein the hot cathode chamber communicates with the evaporation chamber through an aperture, connecting the material to be evaporated as the anode in the evaporation chamber, continuously introducing a gas into the hot cathode chamber while evacuating the evaporation chamber to maintain a pressure differential therebetween, and concentrating the beam of electrons by a magnetic field so as to obtain on the surface of the anode a power density sufficient for evaporation.

摘要翻译： 一种在真空蒸发器中蒸发材料的方法和装置，其通过在热阴极和阳极之间持续的由低电压电弧放电产生的电子轰击要蒸发的材料，包括将热阴极定位在与蒸发分离的室中 室，其中热阴极室通过孔与蒸发室连通，将要蒸发的材料作为阳极连接在蒸发室中，连续地将气体引入热阴极室中，同时抽空蒸发室以保持其间的压力差， 并通过磁场聚集电子束，以在阳极的表面上获得足以蒸发的功率密度。

公开(公告)号：US4182783A

公开(公告)日：1980-01-08

申请号：US836177

申请日：1977-09-23

申请人： Vern A. Henery

发明人： Vern A. Henery

IPC分类号： C23C16/448 ,  C23C16/453 ,  C23C11/00 ,  C23C13/12

CPC分类号： C23C16/4481 ,  C23C16/453 ,  Y10S118/05

摘要： An apparatus and method are provided for fluidizing and vaporizing particulate solid coating reactants by first establishing a fluidized bed of dispersed particulant solid coating reactants and thereafter drawing a volume of fluidizing gas and suspended particulate solid coating reactant to a vaporizer while mixing an additional volume of gas therewith and then vaporizing the dispersed particulate solid coating reactant in the reactant-gas mixture. The reactant-gas mixture is then directed into contact with a hot substrate to be coated in order to deposit a film thereon.

摘要翻译： 提供了一种装置和方法，用于通过首先建立分散的颗粒固体涂层反应物的流化床，然后将一定体积的流化气体和悬浮颗粒固体涂料反应物吸入蒸发器同时混合附加体积的气体 然后蒸发反应物 - 气体混合物中的分散的颗粒固体涂料反应物。 然后将反应物 - 气体混合物引导与待涂覆的热衬底接触，以便在其上沉积膜。

公开(公告)号：US4050408A

公开(公告)日：1977-09-27

申请号：US633263

申请日：1975-11-19

申请人： Pierre Beucherie

发明人： Pierre Beucherie

IPC分类号： C23C14/08 ,  C01B13/14 ,  C23C14/00 ,  C23C16/50 ,  H01B3/00 ,  H01G4/33 ,  C23C13/12 ,  B23K5/00

CPC分类号： C23C14/228 ,  C23C14/0084

摘要： A method and apparatus for depositing thin layers of insulating or slightly conductive materials involves reactive spraying through high-frequency inductive plasma. The conductive component of the material to be deposited is sprayed in a first chamber through which an ionizable inert gas travels, the sprayed particles then passing through a second chamber in which a substrate is placed and to which a reactive gas is supplied.Insulating and weakly inductive materials such as oxides, carbide and nitrides may be deposited at a rate substantially comparable with the rate for conductive materials to obtain high quality uniform deposits.

摘要翻译： 用于沉积绝缘或轻微导电材料的薄层的方法和装置包括通过高频感应等离子体的反应性喷涂。 要沉积的材料的导电组分被喷射在可电离惰性气体通过的第一室中，然后喷射的颗粒通过其中放置基板的第二室，并且供应反应性气体。

公开(公告)号：US4039416A

公开(公告)日：1977-08-02

申请号：US569679

申请日：1975-04-21

申请人： Gerald W. White

发明人： Gerald W. White

IPC分类号： C23C14/32 ,  H01J37/36 ,  C23C15/00 ,  C23C13/12

CPC分类号： C23C14/32 ,  H01J37/36

摘要： A gasless ion plating process wherein plating material is melted, vaporized, and then subjected to an ionization environment in a low pressure chamber with a "virtual cathode" consisting of a plasma of ionized atoms of evaporant material created by evaporating in an RF field. It is a gasless ion plating process wherein the system ambient pressure prior to plating material evaporation may be much lower than that required to sustain a glow discharge, however, with vapor pressure of evaporant material added to the environment base pressure being such as to result in a plasma of ionized atoms of the plating material developing as the vaporized material approaches the RF cathode.This invention relates in general to high particulate energy level ion plating deposition of plating material, and in particular, to gasless ion plating. Various high-rate ion plating sources advantageously suited to applicant's gasless ion plating process are disclosed in applicant's co-pending application entitled, "High Rate Ion Plating Source," Application Ser. No. 551,703, filed Feb. 21, 1975, in addition to electron gun, filament and boat type sources, among other known sources.In the application of protective coatings to substrates, vacuum evaporation systems, sputtering, and classical ion plating have been used in the past with varying degrees of success. Vacuum evaporation provides high deposition rates, but has the disadvantage of being a "line-of-sight" process. Three-dimensional uniformity is very difficult to achieve and requires expensive tooling--and such deposited coating results in poorly bonded columnar grains. Further, since there is no particle acceleration involved in the vapor deposition, adhesion can frequently be a problem. To some extent, sputtering overcomes the "line-of-sight" problem, and offers a wide variety of materials, film stoichiometry, and generally better adhesion, than does vapor deposition. There are, however, serious problems with slow deposition rates and three-dimensional uniformity. An often overlooked problem with sputtering is the decreased energy of the deposited atom. Sputtering is a secondary process. An ion of inert gas is born in a plasma, at a space charge depression of typically +80 to +100 volts. Only after an inelastic collision with the target, is an atom of target material released for useful coating. The neutral atom must then migrate back across the dark space, through the plasma, onto the substrate. In the process, numerous collisions deplete the atom's energy. Thus, in its journey to the substrate, the inert gas that heretofore has been considered essential for maintaining the plasma and removing the target material, becomes a hindrance to the liberated atom of coating material. Additionally, a considerable amount of this inert gas becomes included in the deposited film. Classical ion plating--as described, for example, in Mattox, U.S. Pat. No. 3,329,601--provides some of the advantages of the previous two methods, but is entirely dependent upon an inert gas that is introduced into the system to maintain the plasma. The classical ion plating system ionizes only about 20% of the evaporated material. Further, the full effect of the gas upon the coating and/or substrate is unknown.It is therefore a principal object of this invention to provide an improved plating system.Another object is to provide a plating system with high deposition rates.A further object is to provide a plating system not subject to degradation caused by inert gases.A still further object is to provide a plating system which coats small internal diameters and irregularly shaped cavities of a substrate.Still another object of this invention is to provide a plating process for plating a wide variety of materials, both conductive and non-conductive.Features of this invention useful in accomplishing the above objects include a plating system utilizing a high rate ion source, operable in a vacuum. The ion source is instrumental in converting the plating material to the form of a plasma forming a "virtual" cathode in the region of the substrate.A specific embodiment representing what is presently regarded as the best mode of carrying out the invention is illustrated in the accompanying drawing:

摘要翻译： 一种无气体离子电镀方法，其中电镀材料在具有由在RF场中蒸发产生的蒸发材料的电离原子的等离子体构成的“虚拟阴极”的低压室中熔化，蒸发，然后进行离子化环境。 这是一种无气体离子电镀工艺，其中电镀材料蒸发之前的系统环境压力可以比维持辉光放电所需的系统环境压力低得多，然而，随着蒸发剂材料的蒸汽压力加到环境基础压力上，导致 随着汽化材料接近RF阴极，电镀材料的电离原子的等离子体显影。

公开(公告)号：US4018184A

公开(公告)日：1977-04-19

申请号：US599471

申请日：1975-07-28

申请人： Koichi Nagasawa ,  Koichi Kijima

发明人： Koichi Nagasawa ,  Koichi Kijima

IPC分类号： C23C16/455 ,  C30B31/10 ,  C30B33/00 ,  H01L21/316 ,  C23C13/12

CPC分类号： H01L21/02238 ,  C23C16/455 ,  C30B31/10 ,  C30B33/005 ,  H01L21/02255 ,  H01L21/31662 ,  Y10S118/90

摘要： An apparatus for treatment of a semiconductor wafer comprises a sealable treating vessel which forms a sealed treating chamber in the vessel when sealed. A gas feeder feeds a compressed gas to the treating chamber. A heating device is disposed out of the treating chamber. The semiconductor wafer in the treating chamber is treated with the compressed gas while it is heated by the heating device.

摘要翻译： 用于处理半导体晶片的设备包括可密封的处理容器，其在密封时在容器中形成密封处理室。 气体进料器将压缩气体供给到处理室。 加热装置设置在处理室外。 处理室中的半导体晶片在被加热装置加热时用压缩气体处理。

公开(公告)号：US3915119A

公开(公告)日：1975-10-28

申请号：US46768474

申请日：1974-05-07

申请人： US ENERGY

发明人： ROY PRODYOT ,  SIMPSON JAMES L ,  AITKEN EDWARD A

IPC分类号： C04B35/486 ,  C04B35/488 ,  C04B41/50 ,  C04B41/87 ,  C23C14/04 ,  C23C14/24 ,  C23C16/00 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  G01N27/406 ,  G01N27/407 ,  H01M8/12 ,  C23C13/12

CPC分类号： G01N27/4073 ,  C04B35/486 ,  C04B35/488 ,  C04B41/009 ,  C04B41/5025 ,  C04B41/87 ,  C23C16/045 ,  C23C16/40 ,  C23C16/4414 ,  G01N27/4067 ,  H01M8/1246 ,  H01M2300/0094 ,  Y02E60/525 ,  Y02P70/56 ,  C04B41/4529 ,  C04B41/455 ,  C04B35/48

摘要： Method and apparatus for fabrication of composite ceramic members having particular application for measuring oxygen activities in liquid sodium. The method involves the simultaneous deposition of ThO2: 15% Y2O3 on a sintered stabilized zirconia member by decomposition of gaseous ThCl4 and YCl3 and by reacting with oxygen gas. Means establish an electrical potential gradiant across the zirconia member whereby oxygen ions, from a source on one side of the member portion to be coated, is migrated to the opposite side where a reaction and said decomposition and deposition is effected.

摘要翻译： 具有特别用于测量液态钠中的氧活性的复合陶瓷构件的制造方法和装置。 该方法包括通过气态ThCl4和YCl3的分解以及与氧气反应，在烧结的稳定的氧化锆构件上同时沉积ThO 2：15％Y 2 O 3。 手段建立跨越氧化锆构件的电势梯度，从而将来自待涂覆构件部分一侧的源的氧离子迁移到进行反应和所述分解和沉积的相对侧。

公开(公告)号：US3913520A

公开(公告)日：1975-10-21

申请号：US28048972

申请日：1972-08-14

申请人： PRECISION THIN FILM CORP

发明人： BERG JOSEPH E ,  BROWN JR RANDOLPH E

IPC分类号： C23C14/20 ,  B05D7/02 ,  B05D7/24 ,  B29D11/00 ,  C08J7/00 ,  C08J7/04 ,  C23C14/24 ,  C23C14/32 ,  C23C14/48 ,  G02B1/10 ,  G21K5/04 ,  H01J27/26 ,  C23C13/12

CPC分类号： B32B7/02 ,  B05D1/60 ,  B05D7/02 ,  B05D7/24 ,  B29D11/0073 ,  B29D11/00865 ,  C23C14/32 ,  C23C14/48 ,  G21K5/04 ,  H01J27/26

摘要： Method and aparatus for using emitting, ionizing, accelerating and collecting elements in a high vacuum to implant a hard film on a plastic substrate or the like. In preparation, a slug of a selected material to be deposited as a film is placed in the emitter. The specimens or articles to be implanted are placed on supports in the vicinity of the collector. A cover enclosure is then placed in position and the region enclosed by the cover is exhausted to a high vacuum. Selected potentials are applied to various elements of the apparatus and an accelerating/directing field, which may be developed electrostatically, magnetically or by a combination of both, is developed in the acceleration structure. The electrostatic field causes electron emission from the ionizing elements to develop an increased charge on the emitted ionized particles. When implantation is to begin, a shutter control is moved out of beam blocking position and ionized particles from the emitter pick up additional charge from the ionizing elements and are accelerated to high velocity for bombarding the specimens. The collector is provided near the end of the enclosure beyond the specimen support region. The specimens are discharged regularly to eliminate the build-up of surface charge from the stream of bombarding ions.

摘要翻译： 用于在高真空中使用发射，电离，加速和收集元件以在塑料基板等上注入硬膜的方法和装置。 在制备中，将要沉积为膜的所选材料的块塞放置在发射器中。 待植入的标本或物品放置在收集器附近的支撑件上。 然后将盖罩放置在适当位置，并且由盖封闭的区域被排出到高真空。 选择的电位被应用于装置的各种元件，并且在加速结构中开发出可以静电地，磁性地或通过两者的组合开发的加速/定向场。 静电场引起电离元件的电子发射，对发射的电离粒子产生增加的电荷。 当开始植入时，快门控制被移出光束阻挡位置，并且来自发射器的离子化颗粒从电离元件拾取附加电荷并且被加速到高速度以轰击样品。 收集器设置在靠近样品支撑区域的外壳端部附近。 样品经常排出，以消除从轰击离子流中积聚的表面电荷。