Reaction brazing of tungsten or molybdenum body to carbonaceous support
    31.
    发明授权
    Reaction brazing of tungsten or molybdenum body to carbonaceous support 失效
    将钨或钼体反应钎焊到含碳载体上

    公开(公告)号:US06554179B2

    公开(公告)日:2003-04-29

    申请号:US09900252

    申请日:2001-07-06

    IPC分类号: B23K3102

    摘要: Reaction-brazing of tungsten or molybdenum metal bodies to carbonaceous supports enables an x-ray generating anode to be joined to a preferred lightweight substrate. Complementary surfaces are provided on a dense refractory metal body and a graphite or a carbon-carbon composite support. A particulate braze mixture comprising Hf or Zr carbide, Mo or W boride, Hf or Zr powder and Mo or W powder is coated onto the support surface, and hafnium or zirconium foil may be introduced between the braze mixture and the refractory metal body complementary surface. Reaction-brazing is carried out at or near the eutectic point of the components, which may be influenced to some extent by the presence of carbon and boride. Heating to about 1865° C. for a Mo/Hf combination creates a thin, dense, strong braze that securely joins the two bodies and creates a thin barrier of carbide and boride microphases near and along the interface with the carbon support that diminishes carbon diffusion into the metal body during extended exposures at elevated temperatures (above those presently used in x-ray tubes), even well above the eutectoid temperature.

    摘要翻译: 钨或钼金属体对碳质载体的反应钎焊使得x射线产生阳极能够接合到优选的轻质基底上。 互补表面设置在致密的耐火金属体和石墨或碳 - 碳复合材料载体上。 包含Hf或Zr碳化物,Mo或W硼化物,Hf或Zr粉末和Mo或W粉末的颗粒状钎焊混合物涂覆在载体表面上,并且铪或锆箔可以引入钎焊混合物和难熔金属体互补表面 。 反应钎焊在组分的共晶点处或附近进行,这可能在一定程度上受到碳和硼化物的存在的影响。 对于Mo / Hf组合,加热至约1865℃产生薄而致密的强钎焊,其牢固地连接两个主体,并且在与碳载体的界面附近和沿着碳载体的界面产生薄碳屏障和硼化物微相,从而减少碳扩散 在升高的温度(高于目前在x射线管中使用的那些)下延伸曝光时,甚至远高于共析温度,进入金属体。

    Method and means for rapid heat-sink soldering

    公开(公告)号:US06550668B2

    公开(公告)日:2003-04-22

    申请号:US09850398

    申请日:2001-05-07

    申请人: Larry J. Costa

    发明人: Larry J. Costa

    IPC分类号: B23K3102

    CPC分类号: B23K3/085 B23K3/087

    摘要: A method and system for instantaneous heat-sink soldering comprising a gripper device, an intense heat source, and an air-jet cooling system is provided for soldering terminals to structures of dissimilar material composition. The gripper device is adapted to secure the terminal between a pair of jaws and selectively position the terminal closely adjacent the structure. The jaws further serve as heat sinks to continually remove residual heat from the terminal, both during and after the application of heat to the terminal. Upon termination of the heat application, air-jet cooling is provided to the terminal to quickly cool the terminal and the molten layer of solder. The method of rapidly heating and cooling the terminal and layer of solder prevents the annealing of certain silica substrates and provides better solder connections.

    Automatic wave soldering apparatus and method
    35.
    发明授权
    Automatic wave soldering apparatus and method 有权
    波峰焊自动装置及方法

    公开(公告)号:US06513702B2

    公开(公告)日:2003-02-04

    申请号:US09983188

    申请日:2001-10-23

    申请人: Shohei Mawatari

    发明人: Shohei Mawatari

    IPC分类号: B23K3102

    CPC分类号: B23K3/0653

    摘要: An automatic wave soldering apparatus includes a solder reservoir for holding a supply of molten solder and a solder nozzle vertically disposed in the solder reservoir to establish a solder wave through which a printed circuit board is moved. A pair of trapezoidal elements are secured within the nozzle. A Y-shaped baffle is disposed between the trapezoidal elements to form upwardly inclined narrowed upstream and downstream outlets. The upstream and downstream outlets are inclined at an acute angle against and in the direction of movement of the printed circuit board, respectively. A pair of valves are disposed at opposite sides of the baffle to selectively open and close the outlets. The bottom side of each of the trapezoidal elements forms a step to promote turbulence in the solder wave. The trapezoidal elements and the baffle collectively serve to increase the flow velocity of the molten solder through the outlets.

    摘要翻译: 自动波峰焊装置包括用于保持熔融焊料供应的焊料储存器和垂直设置在焊料储存器中的焊接喷嘴,以建立移动印刷电路板的焊料波。 一对梯形元件固定在喷嘴内。 Y形挡板设置在梯形元件之间以形成向上倾斜的变窄的上游和下游出口。 上游和下游出口分别相对于印刷电路板的移动方向倾斜成锐角。 一对阀设置在挡板的相对侧,以选择性地打开和关闭出口。 每个梯形元件的底侧形成了促进焊波中的湍流的步骤。 梯形元件和挡板共同用于增加熔融焊料通过出口的流速。

    Method for improving the manufacturing safety of weld joints
    37.
    发明授权
    Method for improving the manufacturing safety of weld joints 失效
    提高焊接接头的制造安全性的方法

    公开(公告)号:US06488199B1

    公开(公告)日:2002-12-03

    申请号:US09674939

    申请日:2000-12-29

    IPC分类号: B23K3102

    摘要: A method for increasing the manufacturing certainty of soldered connections between a ceramic carrier and a printed-circuit board. It includes the method step of applying a first decomposition-resistant metallization layer on a ceramic carrier and the subsequent imprinting onto the first metallizing layer of a second metallizing layer, improving the wetting performance. In this manner, it is possible to achieve an increase in the overall metallizing layer thickness in the edge area of a soldered connection, whose solder rise in turn makes possible an optical, fully-automatic monitoring of the soldered connection.

    摘要翻译: 一种用于增加陶瓷载体和印刷电路板之间的焊接连接的制造确定性的方法。 其包括在陶瓷载体上施加第一耐分解金属化层的方法步骤,以及随后的压印到第二金属化层的第一金属化层上,改善润湿性能。 以这种方式,可以实现焊接连接的边缘区域中的整体金属化层厚度的增加,其焊料上升反过来使得焊接连接的光学全自动监控成为可能。

    Method for hermetically encapsulating microsystems in situ
    40.
    发明授权
    Method for hermetically encapsulating microsystems in situ 有权
    原位气密封装微系统的方法

    公开(公告)号:US06454160B2

    公开(公告)日:2002-09-24

    申请号:US09726015

    申请日:2000-11-30

    IPC分类号: B23K3102

    摘要: The method for hermetically encapsulating microsystems in situ consists, in a first phase, of mounting on a common substrate (1), several microsystems (6) surrounded by a metal adhesion layer (4) deposited on the substrate (1). In a second phase, in a common deposition step a first metal layer (7) is deposited by electrolytic means on each microsystem (6) and on an annular zone (7a) of the adhesion layer (4) surrounding each microsystem (6), so as to completely cover each microsystem by overlap. Subsequently a second metal layer (9) is deposited by electrolytic means on the first metal layer (7) and on the adhesion layer so as to cover most of the first layer with the exception of at least one passage (10) per microsystem (6), providing access to the first layer (7). The metal of the first layer is different from the metals of the adhesion layer, the second layer and the microsystem. The first layer (7) is removed by selective chemical etching through the passages (10) which are closed to obtain metal capsules hermetically enclosing each microsystem.

    摘要翻译: 原位气密封装微系统的方法包括在第一阶段中安装在公共衬底(1)上,由沉积在衬底(1)上的金属粘附层(4)围绕的几个微系统(6)。 在第二阶段中,在公共沉积步骤中,第一金属层(7)通过电解装置沉积在每个微系统(6)上以及围绕每个微系统(6)的粘附层(4)的环形区域(7a)上, 以便通过重叠来完全覆盖每个微系统。 随后,通过电解装置将第二金属层(9)沉积在第一金属层(7)上和粘合层上,以覆盖大部分第一层,除了每个微系统的至少一个通道(10)(6 ),提供对第一层(7)的访问。 第一层的金属与粘合层,第二层和微系统的金属不同。 通过选择性化学蚀刻通过封闭的通道(10)去除第一层(7),以获得密封地包围每个微系统的金属胶囊。