公开(公告)号：US20180040647A1

公开(公告)日：2018-02-08

申请号：US15666758

申请日：2017-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Seiji YASUMOTO ,  Yuka KOBAYASHI ,  Satoru IDOJIRI

IPC: H01L27/12 ,  H01L21/47 ,  H01L27/32 ,  H01L29/786 ,  H01L21/683 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133553 ,  G02F1/133603 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133354 ,  G02F2001/13613 ,  G02F2201/44 ,  H01L21/02118 ,  H01L21/02255 ,  H01L21/02282 ,  H01L21/47 ,  H01L21/6835 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/323 ,  H01L27/3232 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2227/323 ,  H01L2227/326

Abstract: To increase the yield of the separation process. To produce display devices formed through the separation process with higher mass productivity. A first layer is formed using a material including a resin or a resin precursor over a substrate. Then, first heat treatment is performed on the first layer, whereby a first resin layer including a residue of an oxydiphthalic acid is formed. Then, a layer to be separated is formed over the first resin layer. Then, the layer to be separated and the substrate are separated from each other. The first heat treatment is performed in an atmosphere containing oxygen.

公开(公告)号：US09887119B1

公开(公告)日：2018-02-06

申请号：US15281464

申请日：2016-09-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Akihiro Horibe

IPC: H01L21/683 ,  H01L21/78 ,  H01L25/00 ,  H01L27/12 ,  H01L23/00

CPC classification number: H01L21/6835 ,  H01L21/78 ,  H01L24/92 ,  H01L25/50 ,  H01L27/1266 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: Methods of bonding chips to a substrate and transfer wafers used for such bonding include bonding chips to a first support wafer by a first adhesive layer. The chips are bonded to a second support wafer by a second adhesive layer. Regions of the first adhesive layer are selectively weakened to decrease an adhesive strength in weakened regions. The weakened regions correspond to a subset of chips. The second support wafer is separated from the first wafer, such that the subset of chips in the weakened regions debond from the first support wafer. The subset of chips are bonded to a target substrate.

公开(公告)号：US20170345850A1

公开(公告)日：2017-11-30

申请号：US15532690

申请日：2015-12-02

Applicant: Ceramics & Chemicals Technology Inc.

Inventor： Dong Heon LEE ,  Jeong Seok KIM

IPC: H01L27/12 ,  C09D139/00 ,  C09D179/02 ,  H01L21/683 ,  C09D7/12 ,  C08K3/34

CPC classification number: H01L27/1266 ,  C08K3/34 ,  C08K3/346 ,  C09D7/61 ,  C09D139/00 ,  C09D179/02 ,  C09D179/08 ,  G09F9/00 ,  H01L21/6835 ,  H01L27/1218 ,  H01L29/78603 ,  H01L2221/68345 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: This invention relates to an exfoliation layer composed of a cationic polymer electrolyte or organosilane and negatively charged phyllosilicate sheet-shaped nanoparticles, and to a method of manufacturing the exfoliation layer, including a) negatively charging the surface of a substrate, b) applying a cationic polymer electrolyte or performing a silanization process, and c) negatively charging and applying phyllosilicate. Since the exfoliation layer of the invention has an effect of reducing bonding force due to the sheet-shaped nanoparticles therein, the exfoliation layer enables a flexible display to be temporarily fixed on a supporting substrate upon fabrication of the flexible display and to then be easily separated after the completion of the fabrication thereof.

公开(公告)号：US09831273B2

公开(公告)日：2017-11-28

申请号：US14579360

申请日：2014-12-22

Applicant: University of Houston System

Inventor： Jae-Hyun Ryou

IPC: H01L29/04 ,  H01L27/12 ,  H01L21/02 ,  H01L21/20

CPC classification number: H01L27/12 ,  H01L21/02002 ,  H01L21/02639 ,  H01L21/2007 ,  H01L27/1266 ,  H01L29/04

Abstract: Systems and methods herein relate to the fabrication of a single-crystal flexible semiconductor template that may be attached to a semiconductor device. The template fabricated comprises a plurality of single crystals grown by lateral epitaxial growth on a seed layer and bonded to a flexible substrate. The layer grown has portions removed to create windows that add to the flexibility of the template.

公开(公告)号：US20170338254A1

公开(公告)日：2017-11-23

申请号：US15494000

申请日：2017-04-21

Applicant: ARES Materials, Inc.

Inventor： Radu REIT ,  Adrian AVENDANO-BOLIVAR ,  David ARREAGA-SALAS

IPC: H01L27/12 ,  B05D3/00 ,  H01L29/786 ,  B05D1/00 ,  B05D1/28 ,  H05K1/18 ,  H01L27/32

CPC classification number: H01L27/1266 ,  B05D1/005 ,  B05D1/28 ,  B05D3/007 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/7869 ,  H01L51/0097 ,  H01L2227/326 ,  H01L2251/5338 ,  H05K1/0393 ,  H05K1/189 ,  H05K2201/0108

Abstract: Provided are flexible electronics stacks and methods of use. An example flexible electronics stack includes a flexible polymeric substrate film and a rigid inorganic electronic component. The flexible polymeric substrate film includes a thermoset polymer prepared by curing a monomer solution; wherein the monomer solution comprises about 25 wt % to about 65 wt % of one or more thiol monomers and from about 25 wt % to about 65 wt % of one or more co-monomers.

公开(公告)号：US20170329185A1

公开(公告)日：2017-11-16

申请号：US15531382

申请日：2015-11-24

Applicant: Sharp Kabushiki Kaisha

Inventor： ISAMU MIYAKE ,  YOHSUKE KANZAKI

IPC: G02F1/1337 ,  H01L29/24 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368

CPC classification number: G02F1/133788 ,  G02F1/1337 ,  G02F1/133707 ,  G02F1/1368 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention provides a liquid crystal display device in which display unevenness is suppressed by preventing degradation of TFT characteristics due to photo-alignment treatment. A liquid crystal display device of the present invention includes: a thin film transistor substrate; and a liquid crystal layer. The thin film transistor substrate includes a thin film transistor having an etching stopper structure, an alignment film, and a pair of electrodes for applying an electric field to the liquid crystal layer. The thin film transistor includes a gate electrode, a gate insulating film, a channel layer containing an oxide semiconductor, an etching stopper layer, and a pair of a source electrode and a drain electrode in the stated order. The alignment film includes a photofunctional group. The liquid crystal layer has negative dielectric anisotropy.

公开(公告)号：US09818773B2

公开(公告)日：2017-11-14

申请号：US15150413

申请日：2016-05-09

Applicant: HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Jen-Tsorng Chang

IPC: H01L27/12 ,  H01L21/683 ,  G02F1/1335 ,  G02F1/1368 ,  H01L21/78 ,  G02F1/1333

CPC classification number: H01L27/1266 ,  G02F1/133514 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2202/28 ,  H01L21/6835 ,  H01L21/78 ,  H01L27/1218 ,  H01L27/1259 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  Y10T428/24273 ,  Y10T428/24777

Abstract: A supporting device includes a main body and a ring-shaped glue layer. The main body includes a top surface and a bottom surface opposite to the top surface. The top surface defines a first groove. The first groove is substantially ring-shaped. The glue layer is arranged in the top surface and surrounds the first groove. A plurality of glass-frits is distributed in the glue layer. A thickness of the main body is approximately in a range from 0.5 millimeters to 0.8 millimeters. The glue layer is directly attached the top surface.

公开(公告)号：US09818763B2

公开(公告)日：2017-11-14

申请号：US14324651

申请日：2014-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: H01L27/32 ,  H01L27/14 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L29/7869

Abstract: A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.

公开(公告)号：US20170278945A1

公开(公告)日：2017-09-28

申请号：US15345360

申请日：2016-11-07

Applicant: Pragmatic Printing Ltd

Inventor： John James Gregory ,  Richard David Price

IPC: H01L29/66 ,  H01L27/12 ,  G03F7/20

CPC classification number: H01L29/66477 ,  G03F7/2022 ,  H01L27/1266 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/66969

Abstract: A method of manufacturing an electronic device comprising a first terminal (e.g. a source terminal), a second terminal (e.g. a drain terminal), a semiconductor channel connecting the first and second terminals and a gate terminal to which a potential may be applied to control a conductivity of the channel. The method comprises a first exposure of a photoresist from above the substrate using a mask and a second exposure from below, wherein in the second exposure the first and second terminals shield a part of the photoresist from exposure. An intermediate step reduces the solubility of the photoresist exposed in the first exposure. A window is formed in the photoresist at the location which was shielded by the mask, but exposed to radiation from below. Semiconductor material, dielectric material and conductor material are deposited inside the window to form a semiconductor channel, gate dielectric, and a gate terminal, respectively.

公开(公告)号：US09773823B2

公开(公告)日：2017-09-26

申请号：US14949510

申请日：2015-11-23

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Gwang Min Cha ,  Chang Oh Jeong

IPC: H01L27/12 ,  H01L21/768

CPC classification number: H01L27/1288 ,  H01L21/7688 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1266 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

Abstract: A display device and a method of manufacturing the display device are disclosed. In one aspect, the method includes forming a sacrificial layer over a carrier substrate, forming a passivation barrier layer to cover upper and lateral sides of the sacrificial layer and forming a thin film transistor layer over the passivation barrier layer. The method also includes placing a mask over the thin film transistor layer so as to expose an edge portion of the passivation barrier layer, wherein the edge portion does not overlap the mask in the depth dimension of the display device. The method further includes removing the edge portion of the passivation barrier layer so as to form a barrier layer and separating the carrier substrate from the barrier layer via the sacrificial layer.